A paper by Dr. Mohamed Belmoubarik et al. has been selected as Applied Physics Letters' "EDITOR'S PICKS".
2016.04.12
A paper entitled "MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target" by Dr. Mohamed Belmoubarik, a post-doc researcher in Spintronics Group, et al. has been selected as Applied Physics Letters' "EDITOR'S PICKS".
MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani and Kazuhiro Hono, Appl. Phys. Lett. 108, 132404 (2016).
This paper reports on large tunnel magnetoresistance of 245% in a Fe/MgAl2O4/Fe magnetic tunnel junction (MTJ) processed by sputtering iron and spinel targets. The spinel-based MTJ was originally developed by the NIMS group in 2010 (JPN Patent 5586024). Since then, the spinel barrier has been processed by oxidation of MgAl alloy thin films. In this work, the group has shown that a high quality spinel barrier can be grown with industrially viable sputtering process. The TEM images below show the spinel barrier is fully coherent with Fe layers without any misfit dislocations.
Mohamed Belmoubarik, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani and Kazuhiro Hono, Appl. Phys. Lett. 108, 132404 (2016).
This paper reports on large tunnel magnetoresistance of 245% in a Fe/MgAl2O4/Fe magnetic tunnel junction (MTJ) processed by sputtering iron and spinel targets. The spinel-based MTJ was originally developed by the NIMS group in 2010 (JPN Patent 5586024). Since then, the spinel barrier has been processed by oxidation of MgAl alloy thin films. In this work, the group has shown that a high quality spinel barrier can be grown with industrially viable sputtering process. The TEM images below show the spinel barrier is fully coherent with Fe layers without any misfit dislocations.