Quantum Materials Field
Quantum Device Engineering Group

Designing next-generation device architectures using antiambipolar transistors

Group Leader: Yutaka Wakayama

Next-Generation Semiconductor, Nanostructures and devices

Current Topics

We investigated two types of in-memory logic operations: reconfigurable two-input logic circuits and multifunctional artificial synapses. These were realized in a dual-gate antiambipolar transistor with a ReS₂/WSe₂ heterojunction and a zinc phthalocyanine-cored polystyrene film as memory layer.
In-memory logic circuits using AATs
Fig. 2. Reconfigurable logic-in-memory circuits and multifunctional synapses using dual-gate AATs.

Outline of Research

We have been developing a new type of logic circuits to overcome the limits of modern von Neumann type device architectures. A key element is an antiambipolar transistor (AAT), where a p-n heterojunction plays critical role in controlling electrical currents. The uniqueness of AATs can be ascribed to their distinctive electrical properties; negative differential transconductance can be manipulated in the wide range of 101–104. By taking this advantage, we have developed multi-valued (ternary and quaternary) logic circuits, reconfigurable logic gates, optically controllable logic-in-memory and artificial synaptic devices. These logic operations have been developed with organic semiconductors and two-dimensional atomic layers.

References

  1. Y. Shingaya, T. Iwasaki, R. Hayakawa, S. Nakaharai, K. Watanabe, T. Taniguchi, J. Aimi, Y. Wakayama, ACS Appl. Mater. Interfaces 16 , 33769 (2024). DOI: 10.1021/acsami.4c06116
  2. Y. Shingaya, A. Zulkefli, T. Iwasaki, R. Hayakawa, S. Nakaharai, K. Watanabe, T. Taniguchi, Y. Wakayama, Adv. Electron. Mater. 9 , 2200704 (2022). DOI: 10.1002/aelm.202200704

Group members

  • Profile image
    Yutaka Wakayama
    ・Group Leader
    ・Manager of Administrative Office
  • Profile image
    Ryoma Hayakawa
    ・Principal Researcher

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