Research

In our research group, we focus on atomically thin two-dimensional materials (atomic-layer materials), with thicknesses of only one to a few atomic layers, and we promote research aimed at next-generation semiconductor device applications.

In recent years, the rapid expansion of generative AI and data centers has led to increasing electricity consumption worldwide. To address this issue, it is crucial to reduce the power consumption of transistors, which are key electronic components. One approach has been to further scale down silicon, the semiconductor used in transistors. However, because silicon scaling is reaching its physical limits, new options beyond silicon are being explored. For example, researchers are exploring two-dimensional materials as alternatives to silicon, as well as new device concepts such as tunnel field-effect transistors (tunnel FETs), which reduce heat generation and power consumption by operating on a different physical principle.

While research in these directions is advancing, many challenges remain in realizing highly scaled devices using high-quality materials. To tackle these challenges, our group primarily studies transition metal dichalcogenides (TMDs), a representative class of two-dimensional materials. Our work spans thin-film deposition and crystal growth, control of material properties, and device fabrication, as well as structural and property characterization using electrical transport measurements, Raman scattering spectroscopy, optical absorption and photoluminescence spectroscopy, electron microscopy, and scanning probe microscopy.