The chamber achieves a high vacumme of 1*10-7
Torr. Four sputtering cathodes are equiped so that
one can deposit films of a variety of chemical
compositions. Two cathodes are for AC, and the other
two are for DC sputtering. One DC cathode is
specialized for ferromagnetic materials that ensures a
high deposition rate of typical ferromagnets such as Fe,
Co, or Ni. Reactive sputtering can also be made under
Ar, O2, or N2 atomosphere using two independent
mass-flow gas controllers. The substrates temperature
can be set in a wide range (4 to 600 degree C).

<Multinary Magnetron Sputtering System>