Next-Generation Semiconductor Group

STAFF

KOIDE, Yasuo; SUMIYA, Masatomo; IROKAWA, Yoshihiro; IMURA, Masataka; LIU, Jiangwei（Staff Tabs）

AIM and GOAL

Focusing on nitride and diamond semiconductors, we will promote the development of next-generation semiconductor materials and optoelectronic devices in an integrated manner, including heterojunction, epitaxial growth, microfabrication, and processing technologies, and establish guidelines for material device design and operating principles.

FIG １　Schematic drawing of various optoelectronic devices aimed at in the next-generation semiconductor group

APPROACH

• Lead to improvement of the performance of high-electron mobility transistors and photoelectric conversion devices by improving the quality of nitride semiconductor thin films and advancing their functions based on an understanding of physical phenomena.
• Improve the reliability of nitride semiconductor devices by exploring the effects of environmental atmosphere and material properties on their characteristics.
• Improve the response characteristics of diamond deep-ultraviolet detectors to vacuum ultraviolet and proton beams and the long-term stable operation of the devices.
• Develop diamond logic circuits which are robust under extreme conditions by combining metal-oxide-semiconductor field-effect transistors with normally-on/off operation modes.
• Develop insulating gate materials and low-resistance ohmic contact materials for diamond and nitride semiconductors, and establish material design guidelines for semiconductor interfaces.

FIG 2　Photos of vapor phase growth equipment for nitride and diamond semiconductors.

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