NIMS-PCMC Advanced Materials Group
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Ph.D Pakpoom Reunchan

NIMS Postdoctoral Researcher
Advanced Materials Group
Photo-Catalytic Materials Center
National Institute for Materials Science
1-2-1 Sengen,Tsukuba,Ibaraki 305-0047,Japan
TEL: +81-29-851-3783
FAX:+81-29-859-2301
e-mail: REUNCHAN.Pakpoom[at]nims.go.jp


Education
Ph.D * Suranaree University of Technology, Thailand
B.Sc * Kasetsart University, Thailand


Professional Experience
2010.11-present * NIMS PD Researcher
2009.11-2010.10 * PD Researcher, Asia Pacific Center for Theoretical Physics (APCTP), Pohang, Republic of Korea
2006.9-2007.6 * Research Assistant, Materials department, University of California Santa Barbara, USA
2004-2009 * Research Assistant, School of Physics, Suranaree University of Technology, Tailand


Research Interests
* Electronic properties of native defects and impurities in III-V and II-VI semiconductors
* Electronic structure and formation of complex defects in wide band gap semiconductors, including transparent conducting oxides (TCOs)
* Hydrogen and diatomic molecules in semiconductors which have significant responsibility in electronic properties in most semiconductors
* Defects and impurities in diluted nitrides and oxide alloys
* Hydrogen storage materials


Publications
  1. Hydrogen doping in indium oxide: An ab-initio study
    Sukit Limpijumnong, Pakpoom Reunchan, Anderson Janotti, and Chris G. Van de Walle
    Phys. Rev. B80,193202(2009)

  2. Carbon-nitrogen molecules in GaAs and GaP
    Sukit Limpijumnong, Pakpoom Reunchan, Anderson Janotti, and Chris G. Van de Walle
    Phys. Rev. B77,045505(2008)

  3. Mutual passivation of electrically active and isovalent impurities in dilute nitrides
    A. Janotti, P. Reunchan, S. Limpijumnong, and C. G. Van de Walle
    Phys. Rev. Lett100,195209(2008)

  4. Evidence for native-defect donors in n-type ZnO
    D.C. Look, G.C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S.B. Zhang, and K. Nordlund
    Phys. Rev. Lett95,225502(2005)