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第142回先端計測オープンセミナー
「Organic functionalization of silicon surfaces – dynamics, kinetics, and control」
Prof. Michael Dürr, Justus Liebig University Giessen, Germany

4月12日 (金) 11:00-12:00

会場/Venue:

千現地区 研究本館8階 中セミナー室
Sengen Main Bldg. 8F Middle Seminar Room

講演者/Speaker:

Prof. Michael Dürr, Justus Liebig University Giessen, Germany

表題/Title:

Organic functionalization of silicon surfaces – dynamics, kinetics, and control

講演要旨/Abstract:

The adsorption of organic molecules on silicon has been the subject of intense research due to the potential applications of organic functionalization of silicon surfaces in semiconductor technology. The high reactivity of the silicon dangling bonds towards almost all organic functional groups, however, presents a major hindrance for the first basic reaction step of such a functionalization, i.e., chemoselective attachment of bifunctional organic molecules on the pristine silicon surface. Due to this high reactivity, the final adsorption products typically consist of a mixture of molecules adsorbed via different functional groups. For the preparation of well-ordered organic layers on silicon, it is thus important to learn how to control the reactions of the single functional groups. Using various spectroscopic techniques, such as XPS, UPS, and nonlinear optics, in combination with scanning tunneling microscopy and molecular beam techniques, we investigated in detail the reaction mechanisms, kinetics, and dynamics of different functional groups on Si(001). We make use of these results in order to control the respective reactions by either changing the localized electronic surface states or the molecules’ very properties [1,2]. Electronic excitation [3] and hyperthermal energy distributions of the incoming molecules [4] are investigated as further means of control.

[1] M. Reutzel, et al., J. Phys. Chem. C 120, 26284 (2016).
[2] C. Länger, et al., J. Phys.: Condens. Matter 31, 034001 (2019).
[3] G. Mette, et al., Angew. Chemie Int. Ed. 58, 3417 (2019).
[4] T. Lipponer, et al., Surf. Sci. 651, 118 (2016).
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