論文
プロシーディングス
口頭発表
特許
2010
1. Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
Physica E
42
, 2742 (2010).
2009
1. Growth of GaSb dots on GaAs (100) by droplet epitaxy
T. Kawazu, T. Mano, T. Noda, Y. Akiyama, and H. Sakaki
Phys. Stat. Sol. (b)
246
, 733 (2009)
2. Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (100) by droplet epitaxy
T. Noda, T. Mano, T. Kuroda, K. Sakoda, H. Sakaki,
J. Crystal Growth,
311
, 1836 (2009).
2008
1. Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current
T. Kawazu and H. Sakaki
Phys. Stat. Sol. (c)
5
, 2879 (2008)
2. Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substrates.
T. Noda, and H. Sakaki
Physica E, .
40
, 2116 (2008).
3. Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy
Takeshi Noda, Takaaki Mano
Appl. Surf. Sci.
254
777 (2008).
2006
1. Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measurements.
T. Noda, T. Mano, and N. Koguchi
Appl. Surf. Sci.
252
, 5408 (2006)
2. Current-voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum rings.
T. Noda and N. Koguchi
Physica E
32
, 550-553 (2006)