Prof. Byong-Guk Park
Materials Science and Engineering,
KAIST, South Korea
Date & Time: 14:00 - 15:00, November 19th (Wed), 2025.
Place: Room#513-514, Advanced Structural Materials Bldg. 5F, Sengen.
Materials development for field-free spin-orbit torque switching
Prof. Byong-Guk Park
Materials Science and Engineering,
KAIST, South Korea
Abstract:
Spin-orbit torque (SOT), generated by spin currents arising from spin-orbit coupling, has attracted significant attention owing to its potential for efficient magnetization switching in spintronic devices, particularly magnetic random-access memory (MRAM). However, in homogeneous structures, SOT-induced switching is not purely electrical an external in-plane magnetic field is required to achieve deterministic switching, which limits its practicability for device integration. Therefore, realizing field-free SOT switching of perpendicular magnetization, while simultaneously reducing the switching current density, is essential for the advancement of SOT-based technologies.
In this talk, I will present various material engineering strategies for achieving field-free SOT switching with reduced switching current through the generation of out-of-plane spin currents and the associated torques. These include magnetic and antiferromagnetic trilayers as well as side-gated structures. Furthermore, I will introduce novel SOT-based spintronic applications, such as spin logic devices, physically unclonable functions (PUFs), and probabilistic bits.
In this talk, I will present various material engineering strategies for achieving field-free SOT switching with reduced switching current through the generation of out-of-plane spin currents and the associated torques. These include magnetic and antiferromagnetic trilayers as well as side-gated structures. Furthermore, I will introduce novel SOT-based spintronic applications, such as spin logic devices, physically unclonable functions (PUFs), and probabilistic bits.
(Contact)
Hiroaki Sukegawa, Group Leader, Spintronics Group, Research Center for Magnetic and Spintronic Materials (CMSM)
E-mail: SUKEGAWA.Hiroaki[at]nims.go.jp
E-mail: SUKEGAWA.Hiroaki[at]nims.go.jp