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Session 5-1

Perspectives of CoSn kagome metal as interconnects for advanced semiconductor nodes

Tomoya Nakatani

Author

Tomoya Nakatani

Affiliation

NIMS

URL

https://www.nims.go.jp/cmsm/

Biography

Tomoya Nakatani is a Principal Researcher at Research Center for Magnetic and Spintronic Materials, NIMS. He obtained his Ph.D. degree from the University of Tsukuba in 2011 and joined NIMS as a Senior Researcher in 2016. His research covers magnetic recording, spintronics, magnetic sensors, and recently interconnect materials.

Abstract

Interconnects, the wires that connect transistors, are one of the major bottlenecks in semiconductor device performance. At the 10-nm scale, due to the dominant surface scattering of conduction electrons, copper is no longer an efficient conductor. CoSn kagome metal exhibits unique electronic transport characteristics in which low resistivity is confined to a specific crystallographic orientation. This directional transport property makes CoSn a promising candidate for interconnects in advanced logic device technology nodes. This talk reviews recent progress in CoSn thin film studies and outlines the key requirements for realizing CoSn interconnects.

Fig. 1. Crystal structure of CoSn kagome metal. The resistivity is low only along the [0001] c-axis.
Fig. 1. Crystal structure of CoSn kagome metal. The resistivity is low only along the [0001] c-axis.
Fig. 2. HAADF-STEM image of single-crystalline CoSn thin film observed from [0001] zone-axis.
Fig. 2. HAADF-STEM image of single-crystalline CoSn thin film observed from [0001] zone-axis.