Session 3-4

Abstract

Highly integrated qubits can be expected in semiconductor quantum dots compared with superconducting qubits although only small number of quantum dots have been demonstrated so far. One of the obstacles to limit the yield is the valley degrees of freedom in Si. Here we show the demonstration of electrostatically defined quantum dot in ZnO [1]. We have employed high-quality ZnO heterostructures, which exhibit integer and fractional quantum Hall effects. ZnO possesses low-density nuclear spins, weak spin-orbit interactions, and single valley electron pocket in the conduction band. Given these properties, our result show that ZnO is one of the most promising candidates for semiconductor spin qubits.