Session 3-3

Abstract

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. However, device relevant semiconductor/dielectric substrates pose challenges for chemical vapor deposition (CVD) since these types of materials are typically incapable of catalyzing the decomposition of carbon source gases and facilitating the adsorption and arrangement of active carbon atoms during CVD growth. State of the art in the field currently is a two-step process: a high-quality graphene layer synthesis on metal substrate through CVD followed by delicate layer-transfer onto device-relevant substrates.
Here we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation, to directly synthesize large area, high quality, and layer-tunable graphene films on device relevant substrates without the post-synthesis layer transfer process [1]. This presentation will focus on graphene layer formation mechanism, detailed characterization, and performance characteristics of select devices fabricated directly onto our ion beam synthesized graphene layers grown on different substrates [2].