Session 3-1

Abstract

Advances in nanoscience have overcome materials compatibility issues and delivered novel functionalities. The progress has come with various nanomaterials, such as two-dimensional (2D) materials, nanowires, nanoparticles, and other hierarchical materials. There is no silver bullet as a universal solution for various applications. Therefore, heterostructuring to fabricate multi-dimensional or hybrid architectures, in which individual constituents’ properties are designed, is a common and promising way.
In this seminar, I will discuss epitaxy of conventional semiconductors, such as silicon (Si), germanium (Ge), and wide bandgap semiconductors (GaN, ZnO), at nanoscales and on non-planar architectures and 2D materials.
The main topic of the second part will be multi-dimensional architectures composed of conventional semiconductors and emerging 2D materials. I’ll present van der Waals and remote epitaxy techniques enabling to integrate incommensurate materials without degradation of materials quality. The examples are Ge on 2D materials, exotic phase of group-IV semiconductors, interface between 2D and conventional materials, and microcavities embedding a 2D material. The studies will be discussed in an integrated framework encompassing nucleation/growth mechanisms, functionalities, and prospects of novel applications of mixed-dimensional heterostructures.