Application relevant materials are usually polycrystalline, and one of the major challenges in structural analysis resides in accurately identifying the grain boundary orientation and size distribution over a wide field of view with enough spatial resolution to capture nanometer-sized domains. Four-dimensional scanning transmission electron microscopy (4D-STEM) [1] now enables the fast collection of nano-beam electron diffraction patterns on a two-dimensional array of spatial positions in which various computational analyses can reveal structural variations on a pixel-by-pixel basis over different scales while reducing knock-on damage in samples which have been traditionally very challenging to characterize. In the first part of the presentation, I will showcase our team’s advancements in the field of transmission electron microscopy with an emphasis on understanding effects of strain and defects in low-dimensional materials including the first demonstration of true transmission electron microscopy-based automated orientation mapping [2] and touch on its application in thermal metrology [3]. In the second part of the presentation, I will discuss the role of the Center for Integrated Nanotechnologies, a U.S. Department of Energy Nanoscale Science Research Center, as an international partner in the discovery of new phenomena and development of new devices.
Fig. 1. Electron scattering from the pristine surface of a continuous monolayer tungsten diselenide film is depicted. Artwork by Sarah Tasseff (LANL).