Joint Workshop LANL/NIMS Quantum and Functional Materials and MANA International Symposium 2024


Nanomaterials - 16

Title

Towards non-Planckian emission from GaN devices in non-equilibrium states

Author's photo

Authors

Bisignano Ilario

Affiliations

Graduate School of Science and Technology, University of Tsukuba
Optical Nanostructures Team, MANA, NIMS

URL

https://www.nims.go.jp/mana/research/j4phan00000006x6.html

Email

BISIGNANO.ilario@nims.go.jp

Abstract

Highly energetic electrons driven out-of-equilibrium, known as hot-electrons, generated by applying an electric field, may increase the electron cloud temperature over 2000K[1], causing the material to heat up and negatively affect its device properties. Here we report on the possibility to out-couple the evanescent radiation of these hot-electrons by a gold array grating to the far field on GaN devices. This radiation is collected by a modified FTIR spectrometer setup (Fig.1) in conjunction with a lock-in amplifier. Initially, the strategy to collect such radiation was implemented using an AFM tip[2], but subsequent investigations have demonstrated the effectiveness of metamaterial gratings on GaAs quantum well devices[3]. Building upon the observed effects on quantum well devices, future investigations will aim to extend this approach to a broader range of semiconductors, such as ITO, to determine whether similar out-coupling effects can be achieved. This work can lead to advancements in thermal management and efficiency in nanoelectronics and aid in the recovery of waste heat in energy harvesting.

Fig. 1. (a) Representation of the measured sample consisting of a sapphire substrate, 10nm AlGaN / 30nm n-GaN / 10nm AlGaN quantum well topped with a 50nm Au grating, and electrical pads. (b) Schematic representation of the modified measurement setup.

Reference

  1. Q. Weng, Nature Communications. 12, 4752(2021) DOI: 10.1038/s41467-021-25094-5
  2. Q. Weng, Science. 360(6390), 775-778(2018) DOI: 10.1126/science.aam9991
  3. Y. Zou, Optics Express, 29(2), 1244-1250(2021) DOI: 10.1364/OE.415232