Joint Workshop LANL/NIMS Quantum and Functional Materials and MANA International Symposium 2024


Nanomaterials - 16

Title

Optical properties and structural phase transitions of double perovskite semiconductor Cs2AgInCl6 under high pressure

Author's photo

Authors

Takumi Horikoshi

Affiliations

Degree Programs in Pure and Applied Sciences, Graduate School of Science and Technology, University of Tsukuba

URL

https://www.ims.tsukuba.ac.jp/~matsuishi_lab/

Email

s2320373@u.tsukuba.ac.jp

Abstract

Perovskite semiconductors are expected to be applied to high-efficiency solar cells and light-emitting devices because of their strong optical absorption in a wide range of visible light and strong emissions at room temperature. Among perovskite semiconductors, double perovskite semiconductors are materials that contain monovalent metal cations and trivalent metal cations. Especially, Cs2AgInCl6 belongs to space group \( Fm ̅3m \) at room temperature with AgCl6 and InCl6 octahedra connected to each other at the corners. This semiconductor has a direct band gap and is known to exhibit white luminescence associated with self-trapped excitons (STEs) derived from strong electron-lattice interactions. From the characteristics, it is expected to be applied to white LEDs [1]. In this study, the effects of pressure-induced perturbations on the electronic state and structural change of Cs2AgInCl6 have been clarified by XRD measurements and optical measurements under high pressure. It is very important to understand the relationship between a structural change such as octahedral distortion and a change in electronic states. The high pressure can effectively change crystal lattice and electronic states, as shown in Figs. 1 and 2.

Fig. 1. Changes in XRD patterns of Cs2AgInCl6 with pressure from 7.8 GPa to 8.6 GPa
Fig. 2. Changes in band gap of Cs2AgInCl6 with pressure.

Reference

  1. J. Luo et al., Nature 563, 541(2018) DOI: 10.1038/s41586-018-0691-0