Dr. Shingaya et al. published an original paper on MoS2-based Raman-ion-gating reservoir in Applied Physics Letters
Dr. Shingaya et al. published an original paper on MoS2-based Raman-ion-gating reservoir in Applied Physics Letters. We have demonstrated that the resonant Raman scattering signal from two-dimensional materials is an effective computational resource.
Title：Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
Authors：Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe and Takashi Tsuchiya