Papers

  1. S. Kim, T. Kuznetsova, J. Kim, J. Ko, J. Seo, R. Engel-Herbert, K. Char
    "Epitaxial integration of perovskite based double-gate field effect transistor with silicon"
    APL Materials 13, 071129 (2025)
    DOI: 10.1063/5.0268198
  2. S. Kim, B. Kim, K. Char
    "Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface"
    APL Materials 11, 121105 (2023)
    DOI: 10.1063/5.0173833
  3. D. Pfützenreuter, S. Kim, H. Cho, O. Bierwagen, M. Zupancic, M. Albrecht, K. Char, J. Schwarzkopf
    "Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface"
    Advanced Materials Interfaces 9, 2201279 (2022)
    DOI: 10.1002/admi.202201279
  4. S. Kim, M. Lippmaa, J. Lee, H. Cho, J. Kim, B. Kim, K. Char
    "Critical Role of Terminating Layer in Formation of 2DEG State at the LaInO3/BaSnO3 Interface"
    Advanced Materials Interfaces 9, 2201781 (2022)
    DOI: 10.1002/admi.202201781
  5. Y. Kim, S. Kim, H. Cho, Y. M. Kim, H. Ohta, K. Char
    "Transport Properties of the LaInO3/BaSnO3 Interface Analyzed by Poisson-Schrödinger Equation"
    Physical Review Applied 17, 014031 (2022)
    DOI: 10.1103/PhysRevApplied.17.014031