Papers

  1. H. Gu, M. Tsukamoto, Y. Nakamura, S. Nakaharai, T. Iwasaki, K. Watanabe, T. Taniguchi, S. Ogawa, Y. Morita, K. Sasaki, K. Kobayashi
    "Systematic characterization of nanoscale h-BN quantum sensor spots created by helium-ion microscopy"
    Physics Review Applied 22, 054026-1-12 (2024).
    DOI: 10.1103/PhysRevApplied.22.054026
  2. Y. Sasama, T. Iwasaki, M. Monish, K. Watanabe, T. Taniguchi, Y. Takahide
    "Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator"
    Applied Physics Letters 125, 092103-1-7 (2024).
    DOI: 10.1063/5.0224192
  3. Y. Shingaya, T. Iwasaki, R. Hayakawa, S. Nakaharai, K. Watanabe, T. Taniguchi, J. Aimi, Y. Wakayama
    "Multifunctional in-memory logics based on a dual-gate antiambipolar transistor toward non-von Neumann computing architecture"
    ACS Applied Materials & Interfaces 16, 33796-33805 (2024).
    DOI: 10.1021/acsami.4c06116
  4. M. Sakurai, A. O. Okano, T. Iwasaki, C. Joachim
    "Cutting nanodisks in graphene down to 20 nm in diameter"
    Nanotechnology 35, 315301-1-11 (2024).
    DOI: 10.1088/1361-6528/ad40b5
  5. T. Higashihara, R. Asama, R. Nakamura, M. Watanabe, N. Tomoda, T. J. Hasiweder, Y. Fujisawa, Y. Okada, T. Iwasaki, K. Watanabe, T. Taniguchi, N. Jiang, Y. Niimi
    "Magnetotransport properties in van der Waals RTe3 (R = La, Ce, Tb)"
    Physical Review B 109, 134404-1-8 (2024).
    DOI: 10.1103/PhysRevB.109.134404 [Editors’ Suggestion]
  6. T. Iwasaki, Y. Sato, M. Ogo, B. Oh, D. Kozawa, R. Kitaura, K. Watanabe, T. Taniguchi, S. Moriyama, J. Fujikata
    "Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures"
    Japanese Journal of Applied Physics 63, 030903-1-5 (2024).
    DOI: 10.35848/1347-4065/ad2bd6
  7. T. Iwasaki, Y. Morita, K. Watanabe, T. Taniguchi
    "Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures"
    Physical Review B 109, 075049-1-5 (2024).
    DOI: 10.1103/PhysRevB.109.075409
  8. S. Nakaharai, T. Arakawa, A. Zulkefli, T. Iwasaki, K. Watanabe, T. Taniguchi, Y. Wakayama
    "Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications"
    Applied Physics Letters 122, 262102-1-6 (2023).
    DOI: 10.1063/5.0152475
  9. K. Sasaki, Y. Nakamura, H. Gu, M. Tsukamoto, S. Nakaharai, T. Iwasaki, K. Watanabe, T. Taniguchi, S. Ogawa, Y. Morita, K. Kobayashi
    "Magnetic field imaging by hBN quantum sensor nanoarray"
    Applied Physics Letters 122, 244003-1-6 (2023).
    DOI: 10.1063/5.0147072
  10. V. Karanikolas, T. Iwasaki, J. Henzie, N. Ikeda, Y. Yamauchi, Y. Wakayama, T. Kuroda, K. Watanabe, T. Taniguchi
    "Plasmon-triggered ultrafast operation of color centers in hexagonal boron nitride layers"
    ACS Omega 8, 14641-14647 (2023).
    DOI: 10.1021/acsomega.3c00512
  11. S. Genchi, S. Nakaharai, T. Iwasaki, K. Watanabe, T. Taniguchi, Y. Wakayama, A. N. Hattori, H. Tanaka
    "Step electrical switching in VO2 on hexagonal boron nitride using confined individual metallic domains"
    Japanese Journal of Applied Physics 62, SG1008-1-5 (2023).
    DOI: 10.35848/1347-4065/acb65b
  12. Y. Shingaya, A. Zulkefli, T. Iwasaki, R. Hayakawa, S. Nakaharai, K. Watanabe, T. Taniguchi, Y. Wakayama
    "Dual-gate anti-ambipolar transistor with van der Waals ReS2/WSe2 heterojunction for reconfigurable logic operations"
    Advanced Electronic Materials 9, 2200704 (2023).
    DOI: 10.1002/aelm.202200704
  13. T. Iwasaki, Y. Morita, K. Watanabe, T. Taniguchi
    "Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point"
    Physical Review B 106, 165134-1-6 (2022).
    DOI: 10.1103/PhysRevB.106.165134
  14. S. Genchi, M. Yamamoto, T. Iwasaki, S. Nakaharai, K. Watanabe, T. Taniguchi, Y. Wakayama, H. Tanaka
    "Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domains"
    Applied Physics Letters 120, 053104-1-6 (2022).
    DOI: 10.1063/5.0072746
  15. J. Yaita, K. Fukuda, A. Yamada, T. Iwasaki, S. Nakaharai, J. Kotani
    "Improved channel electron mobility through electric field reduction in GaN quantum-well double-heterostructures"
    IEEE Electron Device Letters 42, 1592-1595 (2021).
    DOI: 10.1109/LED.2021.3116595
  16. T. Iwasaki, S. Moriyama, N. F. Ahmad, K. Komatsu, K. Watanabe, T. Taniguchi, Y. Wakayama, A. M. Hashim, Y. Morita, S. Nakaharai
    "Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime"
    Scientific Reports 11, 18845 (2021).
    DOI: 10.1038/s41598-021-98266-4
  17. A. Zulkefli, B. Mukherjee, R. Sahara, R. Hayakawa, T. Iwasaki, Y. Wakayama, S. Nakaharai
    "Enhanced selectivity in volatile organic compound gas sensors based on ReS2-FETs under light-assisted and gate-bias tunable operation"
    ACS Applied Materials & Interfaces 13, 43030-43038 (2021).
    DOI: 10.1021/acsami.1c10054
  18. T. Iwasaki, S. Nakamura, O. G. Agbonlahor, M. Muruganathan, M. Akabori, Y. Morita, S. Moriyama, S. Ogawa, Y. Wakayama, H. Mizuta, S. Nakaharai
    "Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime"
    Carbon 175, 87-92 (2021).
    DOI: 10.1016/j.carbon.2020.12.076
  19. A. Zulkefli, B. Mukherjee, T. Iwasaki, R. Hayakawa, S. Nakaharai, Y. Wakayama
    "Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors"
    Japanese Journal of Applied Physics 60, SBBH01-1-6 (2021).
    DOI: 10.35848/1347-4065/abd2a0
  20. S. Suzuki, T. Iwasaki, K. K. H. De Silva, S. Suehara, K. Watanabe, T. Taniguchi, S. Moriyama, M. Yoshimura, T. Aizawa, T. Nakayama
    "Direct growth of germanene at interfaces between van der Waals materials and Ag(111)"
    Advanced Functional Materials 31, 2007038 (2021).
    DOI: 10.1002/adfm.202007038
  21. A. Zulkefli, B. Mukherjee, R. Hayakawa, T. Iwasaki, S. Nakaharai, Y. Wakayama
    "Light-assisted and gate-tunable oxygen gas sensor based on rhenium disulfide field-effect transistors"
    Physica Status Solidi Rapid Research Letters 14, 2000330 (2020).
    DOI: 10.1002/pssr.202000330
  22. T. Iwasaki, S. Nakaharai, Y. Wakayama, K. Watanabe, T. Taniguchi, Y. Morita, S. Moriyama
    "Single-carrier transport in graphene/hBN superlattices"
    Nano Letters 20, 2551-2557 (2020).
    DOI: 10.1021/acs.nanolett.9b05332
  23. T. Iwasaki, Y. Morita, S. Nakaharai, Y. Wakayama, E. Watanabe, D. Tsuya, K. Watanabe, T. Taniguchi, S. Moriyama
    "Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices"
    Applied Physics Express 13, 035003-1-4 (2020).
    DOI: 10.35848/1882-0786/ab790d
    [Spotlights 2020]
  24. T. Iwasaki, K. Endo, E. Watanabe, D. Tsuya, Y. Morita, S. Nakaharai, Y. Noguchi, Y. Wakayama, K. Watanabe, T. Taniguchi, S. Moriyama
    "Bubble-free transfer technique for high-quality graphene/hexagonal boron nitride van der Waals heterostructures"
    ACS Applied Materials & Interfaces 12, 8533-8538 (2020).
    DOI: 10.1021/acsami.9b19191
  25. T. Iwasaki, T. Kato, H. Ito, K. Watanabe, T. Taniguchi, Y. Wakayama, T. Hatano, S. Moriyama
    "Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures"
    Japanese Journal of Applied Physics 59, 024001-1-5 (2020).
    DOI: 10.7567/1347-4065/ab65a8
  26. M. E. Schmidt, M. Muruganathan, T. Kanzaki, T. Iwasaki, A. M. M. Hammam, S. Suzuki, S. Ogawa, H. Mizuta
    "Dielectric-screening reduction-induced large transport gap in suspended sub-10 nm graphene nanoribbon functional devices"
    Small 15, 1903025 (2019).
    DOI: 10.1002/smll.201903025
  27. K. Endo, K. Komatsu, T. Iwasaki, E. Watanabe, D. Tsuya, K. Watanabe, T. Taniguchi, Y. Noguchi, Y. Wakayama, Y. Morita, S. Moriyama
    "Topological valley currents in bilayer graphene/hexagonal boron nitride superlattices"
    Applied Physics Letters 114, 243105-1-4 (2019).
    DOI: 10.1063/1.5094456
    [Featured articles]
  28. N. F. Ahmad, K. Komatsu, T. Iwasaki, K. Watanabe, T. Taniguchi, H. Mizuta, Y. Wakayama, A. M. Hashim, Y. Morita, S. Moriyama, S. Nakaharai
    "Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts"
    Scientific Reports 9, 3031 (2019).
    DOI: 10.1038/s41598-019-39909-5
  29. T. Iwasaki, Z. Wang, M. Muruganathan, H. Mizuta
    "Formation of quantum dot in graphene single nanoconstriction"
    Applied Physics Express 12, 025004-1-4 (2019).
    DOI: 10.7567/1882-0786/aaf993
  30. N. F. Ahmad, T. Iwasaki, K. Komatsu, K. Watanabe, T. Taniguchi, H. Mizuta, Y. Wakayama, A. M. Hashim, Y. Morita, S. Moriyama, S. Nakaharai
    "Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime"
    Applied Physics Letters 114, 023101-1-5 (2019).
    DOI: 10.1063/1.5067296
  31. S. Suzuki, M. E. Schmidt, M. Muruganathan, A. M. M. Hammam, T. Iwasaki, H. Mizuta
    "Sub-thermal switching of ultra-narrow graphene nanoribbon tunnel field effect transistors"
    Superlattices and Microstructures 128, 76-82 (2019).
    DOI: 10.1016/j.spmi.2019.01.012
  32. M. E. Schmidt, A. M. M. Hammam, T. Iwasaki, T. Kanzaki, M. Muruganathan, S. Ogawa, H. Mizuta
    "Controlled fabrication of electrically contacted carbon nanoscrolls"
    Nanotechnology 29, 235605 (2018).
    DOI: 10.1088/1361-6528/aab82c
  33. M. E. Schmidt, T. Iwasaki, M. Muruganathan, M. Haque, H. V. Ngoc, S. Ogawa, H. Mizuta
    "Structurally controlled large-area 10 nm pitch graphene nanomesh by focused helium ion beam milling"
    ACS Applied Materials & Interfaces 10, 10362-10368 (2018).
    DOI: 10.1021/acsami.8b00427
  34. T. Iwasaki, M. Muruganathan, M. E. Schmidt, H. Mizuta
    "Partial hydrogenation induced interaction in a graphene-SiO2 interface: irreversible modulation of device characteristics"
    Nanoscale 9, 1662-1669 (2017).
    DOI: 10.1039/c6nr08117g
  35. T. Iwasaki, T. Zelai, S. Ye, H. M. H. Chong, Y. Tsuchiya, H. Mizuta
    "Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy"
    Carbon 111, 67-73 (2017).
    DOI: 10.1016/j.carbon.2016.09.068
  36. J. Sun, T. Iwasaki, M. Muruganathan, H. Mizuta
    "Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor"
    Applied Physics Letters 106, 033509-1-3 (2015).
    DOI: 10.1063/1.4906609
  37. T. Iwasaki, J. Sun, N. Kanetake, T. Chikuba, M. Akabori, M. Muruganathan, H. Mizuta
    "Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene"
    Applied Physics Express 8, 015101-1-4 (2015).
    DOI: 10.7567/APEX.8.015101

Reviews

  1. Shu Nakaharai, Takuya Iwasaki, Yoshifumi Morita, Satoshi Moriyama, Shinichi Ogawa
    "Electron transport tuning of graphene by helium ion irradiation"
    Nano Express 3, 024002 (2022).
    DOI: 10.1088/2632-959X/ac73ad
  2. Vasilios Karanikolas, Seiya Suzuki, Shisheng Li, Takuya Iwasaki
    "Perspective on 2D Material polaritons and innovative fabrication techniques"
    Applied Physics Letters 120, 040501-1-14 (2022).
    DOI: 10.1063/5.0074355
  3. Takuya Iwasaki, Katsuyoshi Komatsu, Yoshifumi Morita, Satoshi Moriyama
    "Quantum transport in hBN/graphene superlattices: from valley Hall effect to single electron transistors"
    Solid State Physics 56, 131-143 (2021).
    [in Japanese]