Publications 2007-2013
Refereed Paper
65) T. Watanabe, T. Teraji, and T. Ito, “Fabrication of diamond p–i–p–i–p structures and their electrical and electroluminescence properties under high electric fields”, Diamond Relat. Mater. 16, 112-117 (2007).
DOI:10.1016/j.diamond.2006.04.003
66) T. Teraji, S. Koizumi, Y. Koide, and T. Ito, “Electric Field Breakdown of Lateral Schottky Diodes of Diamond”, Jpn. J. Appl. Phys. (Exp.) 46, L196-L198 (2007).
DOI:10.1143/JJAP.46.L196
67) T. Izumi, T. Teraji, and T. Ito, “Room-temperature growth of single-crystalline TiO2 thin films on nanometer-scaled substrates by dc magnetron sputtering deposition”, J. Crystal Growth, 299, 349-357 (2007).
DOI:10.1016/j.jcrysgro.2006.11.204
68) H. Miyatake, K. Arima, O. Maida, T. Teraji, and T. Ito, “Further improvement in high crystalline quality of homoepitaxial CVD diamond”, Diamond Relat. Mater. 16, 679-684 (2007).
DOI:10.1016/j.diamond.2006.12.027
69) H. Matsubara, Y. Saitoh, O. Maida, T. Teraji, K. Kobayashi, and T. Ito, “High-performance diamond soft-X-ray detectors with internal amplification function”, Diamond Relat. Mater. 16, 1044-1048 (2007).
DOI:10.1016/j.diamond.2007.01.001
70) K. Arima, H. Miyatake, T. Teraji, and T. Ito, “Effects of vicinal angles from (0 0 1) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method”, J. Crystal Growth 309, 145-152 (2007).
DOI:10.1016/j.jcrysgro.2007.09.026
71) P. Muret, J. Pernot, T. Teraji, and T. Ito, “Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients”, Appl. Phys. Exp. 1, 035003 1-3 (2008)
DOI:10.1143/APEX.1.035003
72) O. Maida, H. Miyatake, T. Teraji, and T. Ito, “Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films”, Diamond Relat. Mater. 17, 435-439 (2008).
DOI:10.1016/j.diamond.2007.12.052
73) V. Mortet, M. Daenen, T. Teraji, A. Lazea, V. Vorlicek, J. D'Haen, K. Haenen, and M. D'Olieslaeger, “Characterization of boron doped diamond epilayers grown in a NIRIM type reactor”, Diamond Relat. Mater. 17, 1330-1334 (2008).
DOI:10.1016/j.diamond.2008.01.087
74) T. Teraji, S. Koizumi, Y. Koide, and T. Ito, “Electric field breakdown of lateral-type Schottky diodes formed on lightly-doped homoepitaxial diamond”, Appl. Surf. Sci. 254, 6273-6276 (2008).
DOI: 10.1016/j.apsusc.2008.02.154
75) T. Teraji, S. Koizumi, and Y. Koide, “Ohmic contact for p-type diamond without post-annealing”, J. Appl. Phys. 104, 016104 1-3 (2008).
DOI:10.1063/1.2936371
76) P. Muret, J. Pernot, T. Teraji, and T. Ito, “Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies”, phys. stat. sol. (a) 205, 2179-2183 (2008).
DOI:10.1143/APEX.1.035003
77) T. Teraji, Y. Garino, Y. Koide, and T. Ito, "Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment" J. Appl. Phys. 105, 126109 1-3 (2009).
DOI:10.1063/1.3153986
78) T. Teraji, Y. Koide, and T. Ito, “High-temperature stability of Au/p-type diamond Schottky diode”, phys. stat. sol. RRL 3, 211-213 (2009).
DOI: 10.1002/pssr.200903151
79) Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, “p-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation”, phys. stat. sol. (a), 206, 2082-2085 (2009).
DOI:10.1016/j.diamond.2011.10.007
80) K. Haenen, A. Lazea, J. Barjon, J. D’Haen, N. Habka, T. Teraji, S. Koizumi, and V. Mortet, “P-doped diamond grown on (110)-textured microcrystalline diamond: growth, characterization and devices”, J. Phys.: Condens. Matter 21 364204 1-10 (2009).
DOI:10.1088/0953-8984/21/36/364204
81) Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, “Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study”, phys. stat. sol. (a), 207, 1460-1463 (2010).
DOI:10.1002/pssa.200925448
82) M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, "Light intensity dependence of photocurrent gain in single-crystal diamond detectors", Phys. Rev. B 81, 033304 1-4 (2010).
DOI:10.1103/PhysRevB.81.033304
83) J. Pernot, P. N. Volpe, F. Omnès, P. Muret, V. Mortet, K. Haenen, and T. Teraji, “Hall hole mobility in boron-doped homoepitaxial diamond”, Phys. Rev. B 81, 205203 1-6 (2010).
DOI:10.1103/PhysRevB.81.205203
84) M. Hamada, T. Teraji, and T. Ito, "Abnormal current increases induced under high electric fields in asymmetrical graphite-intrinsic-diamond-graphite structures fabricated with high-quality homoepitaxial chemical-vapor-deposited diamond layers" J. Appl. Phys. 107, 063708 1-6 (2010).
DOI:10.1063/1.3327439
85) P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz, “High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer”, phys. status solide. 207, 2088-2092 (2010).
DOI:10.1002/pssa.201000055
86) P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji,Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz, “Extreme dielectric strength in boron doped homoepitaxial diamond”Appl. Phys. Lett. 97, 223501 1-3 (2010).
DOI:10.1063/1.3520140
87) P. Muret, P.-N. Volpe, T.-N. Tran-Thi, J. Pernot, C. Hoarau, F. Omnès, and T. Teraji, “Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers”, Diamond Relat. Mater. 20, 285-289 (2011).
DOI:10.1016/j.diamond.2011.01.008
88) Y. Kato, H. Umezawa, T. Teraji, and S. Shikata, “Local Stress-strain Structure in CVD Diamond Observed by Raman Peak-shift Mapping”, Materials Fund Society Symposium Proceedings, 1282, 61-65 (2011).
DOI:10.1557/opl.2011.440
89) Y. Kato, H. Umezawa, H. Yamaguchi, T. Teraji, and S. Shikata, “CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping”, Materials Fund Society Symposium Proceedings, 1282, 73-77 (2011).
DOI:10.1557/opl.2011.446
90) S. Ohmagari, T. Teraji, and Y. Koide, “Non-destructive detection of killer defects of diamond Schottky barrier diodes”, J. Appl. Phys. 110, 056105 1-3 (2011).
DOI:10.1063/1.3626791
91) Y. Garino, T. Teraji, A. Lazea, and S. Koizumi, “Forward tunneling current in {111}-oriented homoepitaxial diamond p-n junction”, Diamond Relat. Mater., 21, 33-36 (2011).
DOI:10.1016/j.diamond.2011.10.007
92) Y. Kato, H. Umezawa, T. Teraji, and S. Shikata, “Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond”, Diamond Relat. Mater., 23, 109-111 (2012).
DOI:10.1016/j.diamond.2012.01.024
93) K.D. Jahnke, B. Naydenov, T. Teraji, S. Koizumi, T. Umeda, J. Isoya, and F. Jelezko, "Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond" Appl. Phys. Lett. 101, 012405 1-5 (2012).
DOI:10.1063/1.4731778
94) T. Teraji, M.Y. Liao and Y. Koide, “Localized mid-gap-states limited reverse current of diamond Schottky diodes”, J. Appl. Phys. 111, 104503 1-7 (2012).
DOI:10.1063/1.4712437
95) T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Liao, Y. Koide, and J. Isoya, “Chemical Vapor Deposition of 12C Isotopically Enriched Polycrystalline Diamond”, Jpn. J. Appl. Phys. 51, 090104 1-7 (2012).
DOI:10.1143/JJAP.51.090104
96) M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors”, Jpn. J. Appl. Phys. 51, 090115 (2012).
DOI:10.1143/JJAP.51.090115
97) A. Lazea, Y. Garino, T. Teraji, S. Koizumi, “High quality p-type chemical vapor deposited {111}-oriented diamonds: Growth and fabrication of related electrical devices”, phys. stat. sol. (a), 209, 1978-1981 (2012).
DOI:10.1002/pssa.201228162
98) I. Niemeyer, J. H Shim, J. Zhang, D. Suter, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and F. Jelezko, “Broadband Excitation by Chirped Pulses: Application to Single Electron Spins in Diamond”, New Journal of Physics, 15, 033027 (2013).
DOI:10.1088/1367-2630/15/3/033027
99) A. Fiori, F. Jomard, T. Teraji, S. Koizumi, J. Isoya, E. Gheeraert, and E. Bustarret, “Synchronized B and 13C Diamond Delta Structures for an Ultimate In-depth Chemical Characterization“, Appl. Phys. Exp. 6, 045801 (2013).
DOI:10.7567/APEX.6.045801
100) T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, “Effective use of source gas for diamond growth with isotopic enrichment”, Appl. Phys. Exp. 6, 055601 (2013).
DOI:10.7567/APEX.6.055601
101) J. Zhang, J. H. Shim, I. Niemeyer, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and D. Suter, “Experimental Implementation of Assisted Quantum Adiabatic Passage in a Single Spin”, Phys. Rev. Lett. 110, 240501 (2013).
DOI:10.1103/PhysRevLett. 110.240501
102) P. London, J. Scheuer, J.-M. Cai, I. Schwarz, A. Retzker, M. B. Plenio, M. Katagiri, T. Teraji, S. Koizumi, J. Isoya, R. Fischer, L. P. McGuinness, B. Naydenov, and F. Jelezko, “Detecting and Polarizing Nuclear Spins with Double Resonance on a Single Electron Spin”, Phys. Rev. Lett. 111, 067601 (2013).
DOI:10.1103/PhysRevLett.111.067601
103) T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, and J. Isoya, “Extending spin coherence times of diamond qubits by high-temperature annealing”, Phys. Rev. B 88, 075206 (2013).
DOI:10.1103/PhysRevB.88.075206
104) T. Yamamoto, C. Müller, L.P. McGuinness, T. Teraji, B. Naydenov, S. Onoda, T. Ohshima, J. Wrachtrup, F. Jelezko, and J. Isoya, “Strongly coupled diamond spin qubits by molecular nitrogen implantation”, Phys. Rev. B 88, 201201 (2013).
DOI:10.1103/PhysRevB.88.201201
著作
1) Tokuyuki Teraji “Chemical Vapor Deposition of Homoepitaxial Diamond Films”, in Physics and Applications of CVD Diamond, Eds. Satoshi Koizumi, Christoph Nebel, Milos Nesladek (Wiley-VCH, 2008), p29-76.2)寺地徳之，「p型ホモエピタキシャルダイヤモンド薄膜の半導体特性」，ダイヤモンドエレクトロニクスの最前線(CMC出版) ISBN: 978-4-7813-0049-8，Page 75-85 (2008).
3) 小出康夫，寺地徳之，「オーミックコンタクト」，ダイヤモンドエレクトロニクスの最前線(CMC出版) ISBN: 978-4-7813-0049-8，Page 162-179 (2008).
4) 寺地徳之，「パワーエレクトロニクス材料」，環境・エネルギー材料ハンドブック(オーム社) ISBN: 978-4-274-20985-8，Page 111-122 (2011).
特許出願
6) 寺地徳之，小泉 聡，小出 康夫 "ダイヤモンド表面の改質方法とそれに用いるカバー材" 特願 2007-186377, 平成2007年7月18日出願, 特開 2009-23855, 平成2009年2月5日公開7) 寺地徳之，小泉 聡，小出 康夫 "ダイヤモンド半導体デバイス" 特願 2009-521672, 平成19年7月3日出願 登録番号：特許登録第5360766号（登録日：2013年9月13日） 国際出願 PCT/JP2008/062111 国際出願日 2008年7月3日 国際公開 WO2009/005134 国際公開日 2009年1月8日
8) 寺地徳之、Yiuri Garino 電圧印加・電流計測ソフト（文化庁著作：プログラム登録） P第9549-1 創作年月日の登録、登録日2009年2月27日
9) 寺地徳之 “ダイヤモンド結晶成長方法及びダイヤモンド結晶成長装置“ 特願 2011-134198, 2011年6月16日出願