Publications 2001-2006
Refereed Paper
21) C. L. Wang, M. Irie, K. Kimura, T. Teraji, and T. Ito, “Boron-Doped Diamond Film Homoepitaxially Grown on High-Quality Chemical-Vapor-Deposited Diamond (100)”, Jpn. J. Appl. Phys. 40, 41-45 (2001).
DOI:10.1143/JJAP.40.4145
22) K. Haenen, K. Meykens, M. Nesládek, G. Knuyt, L. M. Stals, T. Teraji, S. Koizumi, and E. Gheeraert, “Phonon -assisted electronic transitions in phosphorus-doped n-type CVD diamond films”, Diamond Relat. Mater., 10, 439-443 (2001).
DOI:10.1016/S0925-9635(00)00511-2
23) E. Gheeraert, N. Casanova, S. Koizumi, T. Teraji, and H. Kanda, “Low temperature excitation spectrum of phsphorus in diamond”, Diamond Relat. Mater., 10, 444-448 (2001).
DOI:10.1016/S0925-9635(00)00408-8
24) T. Watanabe, M. Irie, T. Teraji, T. Ito, Y. Kamakura, and K. Taniguchi, “Impact excitation of carriers in diamond under extremely high electric fields”, Jpn. J. Appl. Phys. 40, L715-L717 (2001).
DOI:10.1143/JJAP.40.L715
25) N. Casanova, E. Gheeraert, E. Bustarret, S. Koizumi, T. Teraji, H. Kanda, J. Zeman, “Effect of magnetic field on phsphorus center in diamond”, phys. stat. sol. (a), 186, 291-295 (2001).
DOI:10.1002/1521-396X(200108)186:2<291::AID-PSSA291>3.0.CO;2-I
26) T. Teraji, C. L. Wang, S. Endo, and T. Ito, “Improvement in fabrication processes for electronic devices of
homoepitaxial diamond films”, New Diamond and Frontier Carbon Technol., 11, 313-324 (2001).
27) C. L. Wang, K. Kimura, M. Irie, T. Teraji, and T. Ito, “Cathodoluminescence characterization of high-quality homoepitaxial diamond films”, New Diamond and Frontier Carbon Technol., 11, 347-353 (2001).
28) M. Hasegawa, T. Teraji, and S. Koizumi, “Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition”, Appl. Phys. Lett., 79, 3068-3070 (2001).
DOI:10.1063/1.1417514
29) T. Teraji, S. Mitani, C. L. Wang, and T. Ito, “Growth of high-quality homoepitaxial CVD diamond films at high growth rate”, J. Crystal Growth, 235 (2002) 287-292.
DOI:10.1016/S0022-0248(01)01802-4
30) T. Taniguchi, T. Teraji, S. Koizumi, K. Watanabe, S. Yamaoka, “Appearance of n-type semiconducting properties of cBN single crystals grown at high pressure”, Jpn. J. Appl. Phys. 41, L109-L111 (2002).
DOI:10.1143/JJAP.41.L109
31) T. Teraji, S. Mitani, C. L. Wang, and T. Ito, “High-Rate Deposition of High-Quality Homoepitaxial Diamond Films”, New Diamond and Frontier Carbon Technol., 12, 355-368 (2002).
32) H. Kanda, K. Watanabe, S. Koizumi, and T. Teraji, “Characterization of phosphorus doped CVD diamond films by cathodoluminescence spectroscopy and topography”, Diamond Relat. Mater., 12, 20-25 (2003).
DOI:10.1016/S0925-9635(02)00243-1
33) T. Ito, T. Watanabe, M. Irie, J. Nakamura, and T. Teraji, “Electron emissions from CVD diamond surfaces”, Diamond Relat. Mater., 12, 434-441 (2003).
DOI:10.1016/S0925-9635(03)00069-4
34) J. Nakamura, S. Fukumoto, T. Teraji, H. Murakami, and T. Ito, “Hydrogen-related structural changes on CVD diamond (1 0 0) surfaces by ultra-high-vacuum annealing”, Appl. Surf. Sci., 216, 59-64 (2003).
DOI:10.1016/S0169-4332(03)00509-9
35) M. Hamada, T. Teraji, and T. Ito, “Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam”, Appl. Surf. Sci., 216, 65-71 (2003).
DOI:10.1016/S0169-4332(03)00511-7
36) M. S. Chun, T. Teraji, and T. Ito, “Interface formation and properties of a-NPD thermally deposited on CVD diamond films”, Appl. Surf. Sci., 216, 106-112 (2003).
DOI:10.1016/j.apsusc.2004.06.046
37) T. Teraji, M. Katagiri, S. Koizumi, T. Ito, and H. Kanda, ”Ohmic contact formation for n-type diamond by selective doping”, Jpn J. Appl. Phys. (Express), 42, L882-L884 (2003).
DOI:10.1143/JJAP.42.L882
38) T. Teraji, S. Mitani, and T. Ito, “High Rate Growth and Luminescence Properties of High-Quality Homoepitaxial Diamond (100) Films”, phys. stat. sol. (a), 198, 395-406 (2003).
DOI:10.1002/pssa.200306615
39) M. S. Chun, T. Teraji, T. Ito, “Characterization of alpha-NPD thermally deposited on hydrogen-terminated single-crystal chemical-vapor-deposited diamond films”, Jpn J. Appl. Phys., 42, 5233-5238 (2003).
DOI:10.1143/JJAP.42.5233
40) M. S. Chun, T. Teraji, T. Ito,”Charge transfer between thermally deposited alpha-naphthyl-phenyl-diamine and chemical-vapor-deposited homoepitaxial diamond films”, Appl. Phys. Lett., 83, 4776-4778 (2003).
DOI:10.1063/1.1630155
41) T. Watanabe, T. Teraji, T. Ito, Y. Kamakura, and K. Taniguchi, “Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure”, J. Appl. Phys. 95, 4866-4874 (2004).
DOI:10.1063/1.1682687
42) T. Teraji and S. Hara, "Control of interface states at metal/6H-SiC(0001) interfaces,"Phys. Rev. B.70, 035312_1-19 (2004).
DOI:10.1103/PhysRevB.70.035312
43) T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films”, Diamond Relat. Mater., 13, 858-862 (2004).
DOI:10.1016/j.diamond.2004.01.031
44) T. Teraji and T. Ito, “Homoepitaxial Diamond Growth by High-Power Microwave-Plasma Chemical Vapor Deposition”, J. Crystal Growth, 271, 409-419 (2004).
DOI:10.1016/j.jcrysgro.2004.08.005
45) J. H. Kaneko, T. Teraji, Y. Hirai, M. Shiraishi, S. Kawamura, S. Yoshizaki, T. Ito, K. Ochiai, T. Nishitani, and T. Sawamura, “Response function measurement of layered type CVD single crystal diamond radiation detectors for 14 MeV neutrons”, Rev. Sci. Instrum. 75, 3581-3584 (2004).
DOI:10.1063/1.1787918
46) T. Teraji, K. Arima, H. Wada, and T. Ito, “High-Quality Boron-Doped Homoepitaxial Diamond Grown by High-Power Microwave-Plasma Chemical-Vapor-Deposition”, J. Appl. Phys, 96, 5906-5908 (2004).
DOI:10.1063/1.1805180
47) T. Teraji, S. Yoshizaki, S. Mitani, T. Watanabe, and T. Ito, “Transport properties of electron-beam- and photo-excited carriers in high-quality single-crystalline CVD diamond films”, J. Appl. Phys, 96, 7300-7305 (2004).
DOI:10.1063/1.1805723
48) M. S. Chun, T. Teraji, and T. Ito, “Interfacial charge transfer and hole injection in small alpha-NPD organic overlayer-CVD diamond substrate system”, Appl. Surf. Sci., 237, 470-477 (2004).
DOI:10.1016/j.apsusc.2004.06.046
49) K. Tsujimoto, S. Mitani, T. Teraji, and T. Ito, “Fabrication of nano-sized platinum particles self-assembled on and in CVD diamond films”, Appl. Surf. Sci., 237, 489-494 (2004).
DOI:10.1016/j.apsusc.2004.06.064
50) T. Teraji, M. Hamada, H. Wada, M. Yamamoto, K. Arima, and T. Ito, “High rate growth and electrical/optical properties of high-quality homoepitaxial diamond (100) films”, Diamond Relat. Mater. 14, 255-260 (2005).
DOI:10.1016/j.diamond.2004.12.012
51) M. Hamada, T. Teraji, and T. Ito, “Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations”, Jpn, J. Appl. Phys, 44, L216-L219 (2005).
DOI:10.1143/JJAP.44.L216
52) M. Yamamoto, T. Watanabe, M. Hamada, T. Teraji, and T. Ito, “Electrical properties of diamond p–i–p structures at high electric fields”, Appl. Surf. Sci. 244, 310-313 (2005).
DOI:10.1016/j.apsusc.2004.10.136
53) H. Wada, T. Teraji, and T. Ito, “Growth and characterization of P-doped CVD diamond (1 1 1) thin films homoepitaxially grown using trimethylphosphine”, Appl. Surf. Sci. 244, 305-307 (2005).
DOI: 10.1016/j.apsusc.2004.10.137
54) H. Hashimoto, T. Teraji, and T. Ito, “Impact ionization phenomenon in single-crystalline rutile TiO2”, Appl. Surf. Sci. 244, 394-398 (2005).
DOI:10.1016/j.apsusc.2004.09.148
55) T. Teraji, H. Hamada, M. Yamamoto, H. Wada and T. Ito, “High-quality homoepitaxial diamond (100) films grown under high-rate growth condition”, Diamond Relat. Mater. 14, 1747-1752 (2005).
DOI: 10.1016/j.diamond.2005.06.021
56) M. Yamamoto, T. Teraji, and T. Ito, “Oxygen plasma etching of diamond substrate surface for improving quality of homoepitaxial diamond film”, J. Crystal Growth, 285, 130-136 (2005).
DOI:10.1016/j.jcrysgro.2005.08.019
57) F. Fujita, A. Homma, Y. Oshiki, J.H. Kaneko, K. Tsuji, K. Meguro, Y. Yamamoto, T. Imai, T. Teraji, T. Sawamura and M. Furusaka, “Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser”, Diamond Relat. Mater. 14, 1992-1994 (2005).
DOI: 10.1016/j.diamond.2006.09.004
58) J.Y. Wang, T. Teraji, and T. Ito, “Fabrication of wrinkled carbon nano-films with excellent field emission characteristics”, Diamond Relat. Mater. 14, 2074-2077 (2005).
DOI:10.1016/j.diamond.2005.05.006
59) T. Teraji, H. Wada, M. Yamamoto, K. Arima, and T. Ito, “Highly efficient doping of boron into high-quality
homoepitaxial diamond films”, Diamond Relat. Mater., 15, 602-606 (2006).
DOI:10.1016/j.diamond.2006.01.011
60) B.H. Lee, T. Teraji, and T. Ito, “Bleaching and micro-cracking phenomena induced in various types of sapphires by keV-electron beam irradiations”, Nucl. Inst. Meth. B 248, 311-318 (2006).
DOI:10.1016/j.nimb.2006.04.165
61) B.H. Lee, T. Teraji, and T. Ito, “Different behaviors of F+ centers due to electron beam irradiations between synthetic sapphire and Be-diffusion-treated natural sapphire”, J. Crystal Growth 292, 546-549 (2006).
DOI:10.1016/j.jcrysgro.2006.04.062
62) S. Mitani, T. Teraji, and T. Ito, “Formation of self-assembled platinum particles on diamond and their embedding in diamond by microwave plasma chemical vapor depositions”, Diamond Relat. Mater. 15 1544-1549 (2006).
DOI:10.1016/j.diamond.2005.12.052
63) T. Teraji, “Chemical vapor deposition of homoepitaxial diamond films”, Phys. Stat. Sol. (a) 203, 3324-3357 (2006).
DOI:10.1002/pssa.200671408
64) F. Fujita, Y. Oshiki, J.H. Kaneko, A. Homma, K. Tsuji, K. Meguro, Y. Yamamoto, T. Imai, H. Watanabe, T. Teraji, S. Kawamura, and M. Furusaka, “Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser”, Diamond Relat. Mater. 15, 1921-1925 (2006).
DOI:10.1016/j.diamond.2006.09.004