Publications 1992-1997
Refereed Paper
1) T. Cho, E. Takahashi, M. Hirata, N. Yamaguchi, T. Teraji, A. Takeuchi, J. Kohagura, K. Yatsu, T. Tamano, S. Aoki, X. W. Zhang, H. Maezawa, and S. Miyoshi, "Evidence against existing x-ray-energy response theories for silicon-surface-barrier semiconductor detectors", Phys. Rev. A 45, 3024-3027 (1992).DOI:10.1103/PhysRevA.46.R3024
2) T. Cho, M. Hirata, E. Takahashi, T. Teraji, N. Yamaguchi, A. Takeuchi, J. Kohagura, K. Ogura, T. Kondoh, A, Osawa, K. Yatsu, T. Tamano, and S. Miyoshi, "A theory on the x-ray sensitivity of a silicon surface-barrier detector including a thermal charge-diffusion effect", J. Appl. Phys., 72, 3363-3373 (1992).
DOI:10.1063/1.351458
3) S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "Pinning-Controlled Ohmic Contacts: application to SiC(0001)," Appl. Surf. Sci. 107, 218-221 (1996).
DOI:10.1016/S0169-4332(96)00506-5
4) T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ti Ohmic contact without post-annealing process to n-type 6H-SiC," Silicon Carbide and Related Materials 1995, 593-596 (Inst.Phys.Conf.Ser. 142, IOP Publishing, UK, 1996).
5) T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ohmic contacts to n-type 6H-SiC without post-annealing," the MRS Symposium Proceedings Series, eds. D.K. Gaskill, C.D. Brandt, and R.J. Nemanich, 423, (1996 MRS Spring Meeting, San Francisco, USA, 1996).
DOI:10.1557/PROC-423-149
6) S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "New technique for Ohmic formation," the MRS Symposium Proceedings Series, eds. K.N. Tu, J.W. Mayer, J.M. Poate, and L.J. Chen, 427, (1996 MRS Spring Meeting, San Francisco, USA, 1996).
DOI:10.1557/PROC-427-159
7) S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "Control of Schottky and ohmic Interfaces by unpinning Fermi Level," Appl. Surf. Sci. 117/118, 394-399 (1997).
8) T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ideal Ohmic Contacts on 6H-SiC(0001) crystal by reducing Schottky Barrier Height," Appl. Phys. Lett. 71, 689-691 (1997).
DOI:10.1063/1.119831
特許出願
1) 原 史朗， 大串 秀世， 梶村 皓二， 寺地徳之, "電極作成方法" 特願 平8-68018, 1996年3月25日出願 特開 平9-129901, 1997年5月16日公開 登録番号 第2995284号 登録日1999年10月29日1') S. Hara, H. Okushi, K. Kajimura, and T. Teraji, "Structure and fabrication method for Schottky and Ohmic electrodes onto semiconductor devices" 韓国 特願第96-35290号，平成8年8月24日出願 英国/仏国/独国 EPC特願第96306139.5号，平成8年8月22日出願