1.       “Cathodoluminescence of undoped beta-Ga₂O₃ single crystals”, Villora EG; Atou T; Sekiguchi T; Sugawara T, Kikuchi M, Fukuda T, Sol. State Commun., 120 (2001) 455-458.

2.       “Cathodoluminescence microscopy of hydrothermal and flux grown ZnO single crystals”, Urbieta A, Fernandez P, Piqueras J, Hardalov C, Sekiguchi T, J. Phys. D., 34 (2001) 2945-2949.

3.       “Excitonic emission from high-quality homoepitaxial diamond film”, Watanabe H, Sekiguchi T, Okushi H, Sol. St. Phenom., 78079 (2001) 165-169.

4.       “Defect characteristics in sulfur-implanted CVD homoepitaxial diamond”, Hasegawa M, Ogura M, Takeuchi D, Yamanaka S, Watanabe H, Ri S, Kobayashi N, Okushi H, Sekiguchi T, Sol. St. Phenom., 78-79 (2001) 171-176.

5.       “Defects analysis of diamond films in cross section using cathodoluminescence and high-resolution transmission electron microscopy”, Takeuchi D, Watanabe H, Yamanaka S, Sawada H, Ichinose H, Sekiguchi T, Okushi H, Sol. St. Phenom., 78-79 (2001) 197-204.

6.       “Scanning tunnelling spectroscopy characterization of ZnO single crystals”, Urbieta A, Fernandez P, Piqueras J, Sekiguchi T, Semicond. Sci. Technol., 16 (2001) 589-593.

7.    “Origin of band-A emission in diamond thin films”, Takeuchi D, Watanabe H, Yamanaka S, Okushi H, Sawada H, Ichinose H, Sekiguchi T, Kajimura K, Phys. Rev. B, 63 (2001) 5328-5334.

8.    “Variation of electrical properties on growth sectors of ZnO single crystals”, Sakagami N, Yamashita M, Sekiguchi T, Miyashita S, Obara K, Shishido T, J. Cryst. Growth, 229 (2001) 98-103.

9.    “Defects in 30 keV Er⁺-implanted SiO₂/Si studied by positron annihilation and cathodoluminescence”, Hirata K, Arai H, Kawasuso A, Sekiguchi T, Kobayashi Y, Okada S, J. Appl. Phys., 90 (2001) 237-242.

10.    “High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties”, Jin ZW, Fukumura T, Kawasaki M, Ando K, Saito H, Sekiguchi T, Yoo YZ, Murakami M, Matsumoto Y, Hasegawa T, Koinuma H, Appl. Phys. Lett,.78 (2001) 3824-3826.

11.    “Origin of band-A emission in homoepitaxial diamond films”, Takeuchi D, Watanabe H, Sawada H, Yamanaka S, Ichinose H, Sekiguchi T, Okushi H, Diam. Rel. Mat., 10 (2001) 526-530.

12.    “Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate”, Sugaya T, Ogura M, Sugiyama Y, Matsumoto K, Yonei K, Sekiguchi T, Appl. Phys. Lett., 78 (2001) 78-81.