1.     “Hydrothermal growth of ZnO single crystals and their optical characterization”, Sekiguchi T, Miyashita S, Obara K, Shishido T, Sakagami N, J. Cryst. Growth, 214 (2000) 72-76.

2.     “ZnO films grown under the oxygen-rich condition”, Sekiguchi T, Haga K, Inaba K, J. Cryst. Growth, 214 (2000) 68-71.

3.    “Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method”, Kashiwaba Y, Katahira F, Haga K, Sekiguchi T, Watanabe H, J. Cryst. Growth. 221 (2000) 431-434.

4.     

5.    “Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage”, Xia YB, Sekiguchi T, Zhang WJ, Jiang X, Ju JH, Wang LJ, Yao T, Diam. Rel. Mat., 9 (2000) 1636-1639.

6.    “Growth of GaN single crystals from a Na-Ga melt at 750 degrees C and 5 MPa of N-2”, Aoki M, Yamane H, Shimada M, Sekiguchi T, Hanada T, Yao T, Sarayama S, DiSalvo FJ, J. Cryst. Growth. 218 (2000) 7-11.

7.    “Effect of radiation damage on luminescence of erbium-implanted SiO2/Si studied by slow positron beam”, Kawasuso A, Arai H, Hirata K, Sekiguchi T, Kobayashi Y, Okada S, Radiat. Phys. Chem., 58 (2000) 615-619.

8.    “ZnO thin films prepared by remote plasma-enhanced CVD method”, Haga K, Kamidaira M, Kashiwaba Y, Sekiguchi T, Watanabe H, J. Cryst. Growth. 214 (2000) 77-80.

9.    “Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy”, Yamazaki Y, Chang JH, Cho MW, Sekiguchi T, Yao T, J. Cryst. Growth. 214 (2000) 202-216.

10.    “Zinc-blende-type cubic GaN single crystals prepared in a potassium flux”, Yamane H, Kajiwara T, Sekiguchi T, Shimada M, Jpn. J. Appl. Phys., 39 (2000) L146-L148.

11.    “Effects of hydrogen ion bombardment and boron doping on (001) polycrystalline diamond films”, Xia YB, Sekiguchi T, Zhang WJ, Jiang X, Wu WH, Yao T, J. Cryst. Growth, 213 (2000) 328-333.

12.    “Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers”, Ikeda K, Sekiguchi T, Ito S, Takebe M, Suezawa M, J. Cryst. Growth, 210 (2000) 90-93.

13.     “GaN single crystal growth from a Na-Ga melt”, Yamane H, Kinno D, Shimada M, Sekiguchi T, Disalvo FJ, J. Mat. Sci., 35 (2000) 801-808.

14.     “水熱法によるZnO単結晶の成長と特性評価”, 関口隆史, 宮下哲, 小原和夫, 宍戸統悦, 坂上登, 日本結晶成長学会誌, 26 (1999) 203-207.

15.     “Cathodoluminescence study on ZnO and GaN”, Sekiguchi T, Ohashi N, Yamane H, Sol. St. Phenom, 63-4 (1998) 171-181.

16.     “Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates”, Sekiguchi T, Sakuma Y, Awano Y, Yokoyama N, J. Appl. Phys., 83 (1998) 4944-4950.

17.     “Cathodoluminescence study on the hydrogenation of ZnO luminescence”, Sekiguchi T, Ohashi N, Terada Y, Mat. Sci. Forum, 258-2 (1998) 1371-1376.

18.     “Effect of hydrogenation on ZnO luminescence”, Sekiguchi T, Ohashi N, Terada Y , Jpn. J. Appl. Phys., 36 (1997) L289-291.

19.     “EBIC study on the electrical activity of stacking faults in silicon”, Sekiguchi T, Shen B, Watanabe T, Sumino K, Mat. Sci. Eng. B, 42 (1996) 235-239.

20.     “Cathodoluminescence study on dislocations in silicon”, Sekiguchi T, Sumino K, J. Appl. Phys., 79 (1996) 3253-3260.

21.     “Cathodoluminescence study on dislocation-related luminescence in silicon”, Sekiguchi T, Sumino K , Mat. Sci. Forum, 196 (1995) 1201-1205.

22.     “Damage-induced luminescence in InP”, Sekiguchi T, Leipner HS, Appl. Phys. Lett., 67 (1995) 3777-3779.

23.     “Quantitative Electron-Beam Tester for Defects in Semiconductors (CL/EBIC/SDLTS System)”, Sekiguchi T, Sumino K, Rev. Sci. Instr., 66 (1995) 4277-4282.

24.     “Hydrogen Effect on The Optical-Activity of Dislocations in Silicon Introduced at Room-Temperature”, Sekiguchi T, Kveder VV, Sumino K, J. Appl. Phys., 76 (1994) 7882-7888.

25.     “Capacitance Transient Study of Deformation-Induced Defects in N-Type GaAs”, Sekiguchi T, Okushi H, Sumino K, Phys. Stat. Sol. A, 138 (1993) 651-656.

26.     “Interaction between Dislocations and Nonradiative Recombination Centers in GaAs”, Sekiguchi T, Sumino K, Jpn. J. Appl. Phys. 26 (1987) L179-L182.

27.     “Observation of Magnetic Domain-Walls in Co And Co-Fe by Differential-Phase-Contrast STEM”, Sekiguchi T, Watanabe D, Tsuno K, Jpn. J. Appl. Phys., 24 (1984) 1229-1233.