Call for applications to the graduate program in Materials Science and Engineering at University of Tsukuba and National Institute for Materials Science (NIMS)
Professor Sekiguchi’s group, which dedicates the study of semiconductor materials and devices, recruits a couple of students for both doctoral program in Univ. Tsukuba and research assistantship in NIMS. We can also accept master course students as well. This recruitment is for the academic year of 2009, which starts either from April or August 2009. Japanese is not required for the curriculum as well as the entrance examination, but English speaking ability is necessary. The lectures in Master course are done in English as well as Japanese. Accepted students will take the coursed at the university campus and perform their research at NIMS. The stipend of research assistantship in NIMS will cover the tuition fees and the living expense. Most of the students in our laboratory are come from overseas. Thus, the candidate from overseas can easily accommodate the environment. The followings are the main topics of our laboratory. We have an advantage with spatial resolved characterization technique by using electron beam. New coming students will be requested to choose one of them. We expect the doctoral course students have basic knowledge of solid state physics and semiconductor material science.
Imperfection of Si related materials / EBIC
Imperfections in Si or SiC, namely the structural defects and impurities, decide the material quality and device performance. We characterize them by means of electron beam induced current (EBIC) technique.
Grain boundaries in multicrystalline Si for solar cells and stacking faults in SiC wafer for power devices are the hot topics to deal with.
Optical Characterization of Nanostructure / Cathodoluminescence
Widegap semiconductors like ZnO, GaN are promising candidates for ultraviolet light emitter. Their nanostructures may add new functionalities on materials. We characterize them by using chathodoluminescence.
Low voltage SEM / Secondary electrons
Secondary electron images by using low voltage (LV) electron beam are extremely sensitive to the surface condition, surface potential, nano-coated layer, etc. We are developing the LV-SEM method for surface characterization.
For detailed information, refer the following websites,
http://www.nims.go.jp/graduate/english/index.html
Prof. Takashi Sekiguchi
National Institute for Materials Science (NIMS)
University of Tsukuba
1-1 Namiki, Tsukuba 305-0044, Japan
Takashi.sekiguchi@nims.go.jp
