A25:TOF-SIMSNanoGREEN Bldg. E-102

A25:TOF-SIMS

Maker

ION-TOF GmbH

Model

TOF.SIMS5-AD-GCIB

Use for

Detection and identification of trace elements/compounds on the surface, depth profiling, and imaging with the sub-micron lateral resolution

Outline

High sensitivity can be realized by mass spectrometry of secondary ions emitted by ion sputtering. Information on the molecular structure of organic compounds can be obtained under the static SIMS condition. Molecular depth profiling is possible with lower damage by using an Ar gas cluster ion beam (GCIB).

Specification

The beam spot size

100nm (Imaging mode)

Mass resolution

M/ΔM>10000 (Spectroscopy mode)

Ultimate vacuum

<6.7x10-8Pa

Ar-GCIB

Beam energy:2~20kev, Cluster size:Ca.2500

Flooding

O2 or Ar is available (Pressure automatically controlled)

Heating and cooling systems

-130~600℃(The sample stage with heating and cooling systems)

Unexposing the sample to ambient air.

Transfer vessel is available

Notice

  • Samples containing conductive nanoparticles cannot be measured.
  • Layered samples with materials of different conductivities are very difficult to measure.
  • No licenses are issued for this sensitive equipment.
  • A non-air-exposed transfer vessel is provided; however, its airtightness is limited and cannot be guaranteed for sensitive samples.
  • As this is an ultra-high vacuum instrument, samples containing volatile components that may contaminate the chamber cannot, in principle, be measured. Please consult us in advance regarding such samples. Samples containing sulfides cannot be measured.
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