NIMS Nano Device Characterization Group – index

Imperfections in semiconductor crystals, namely defects and impurities, play a crucial role for material functions and device performance. We are characterizing such imperfections with spatial resolved techniques by using electron beams, such as cathodoluminescence (CL), Electron-beam induced current (EBIC), low energy SEM techniques.

Semiconductor nano-structures as well as the quantum structures are also included in our research. The materials we are studying are, IV groups [Si, SiC, SiGe, Si-related devices] II-VI [ZnO, ZnS] III-V [GaN, III-nitride, GaAs, InP related compounds] oxides, etc.

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