Symposium B-1: "Si-LSI-Related Materials, Processes and Characterization Technology"
Co-organized by Nanoelectronics Research Institute (NeRI), AIST

Scope
This symposium intends to review various problems with which Si-LSI technology is being faced in the aspect of materials research, and to find out "seeds" promising for making a breakthrough in the problems. The problems are categorized here to five technical topics listed below. The symposium consists of a plenary session, five technical sessions corresponding to the technical topics and a poster session. The plenary and technical sessions are mainly consisted of invited talks. Submission of papers and recommendation of invited talks will be welcome. Please take a contact with the secretary and get detailed information.

Topics
* High-k & low-k materials and processes
* Gate materials and processes
* New transistors and materials
* Materials for Si Microsystems
* Analysis, characterization and instrumentation techniques

Invited Speakers (tentative)
Prof. Hiroshi Iwai (Tokyo Inst. Technol., Japan)
Dr. Kazuhiko Endo (NEC Laboratories, Japan)
Dr. Meishoku Masahara (NeRI/AIST, Japan)
Dr. Takashi Matsukawa (NeRI/AIST, Japan)

Chairpersons (tentative)
Dr. Junji Itoh^1,2) (Nanoelectronics Research Institute, AIST, Tsukuba, Japan, j-itoh@aist.go.jp)
Prof. Hiroshi Iwai (Tokyo Institute of Technology, Tokyo, Japan, iwai@ae.titech.ac.jp)
Dr. Kazuhiko Endo (NEC Labs., Japan, k-endo@cb.jp.nec.com)
Dr. Eiichi Suzuki (NeRI/AIST, Japan, e.suzuki@aist.go.jp)
Secretary : Dr. Shiro Hara (NeRI/AIST, Japan, shiro-hara@aist.go.jp)

Sponsors
Nanoelectronics Research Institute (NeRI), AIST, Japan.