Symposium A-1: "Growth of Well-defined Nanostructures"

Scope
For the past forty years, electronic computers have grown more powerful as their basic subunit, the transistor, has shrunk. However, the laws of quantum mechanics and the limitations of fabrication techniques soon will prevent further reduction in the minimum size of today's semiconductor transistors. In order to continue this miniaturization down to the molecular scale, present-day microelectronic device designs must be replaced with new designs that take advantage of the quantum mechanical effects that dominate on such a small scale. Fabrication techniques of nanostructures in semiconductor materials are currently studied very intensively. Well understanding of the mechanism in the growth of nanostructures is necessary to realize the novel quantum effect devices. The purpose of this symposium is to stimulate and foster discussions among leading researchers working on the fabrication technology and materials science of nanostructures.

Topics
* Self-organized Formation of Nanostructures in Semiconductor Materials
* Fabrication of Nanostructures for Devices
* Mechanism of Nanostructure Formation
* Materials Science of Nanostructures

Invited Speakers (tentative)
Prof. Masakazu ICHIKAWA, Univ. of Tokyo, Japan
"Formation of Si and Ge nanostuctures on Si substrates using ultrathin SiO₂ technology"
Prof. Seiji TAKEDA, Osaka Univ., Japan
"Formation mechanism of nanocatalysts for the well-defined growth of silicon nanowires and nanochains"
Prof. Toshio OGINO, Yokohama National Univ., Japan
"Integrated and interconnected silicon nanostructures"
Prof. Koichi YAMAGUCHI, Univ. of Electro-Communications, Japan
"Self-formation of semiconductor quantum nanostructuresÐquantum dots, quantum-dot chains and nano-holesÐ"
Prof. Takashi FUKUI, Hokkaido Univ., Japan
"GaAs single electron transistors and their integrated logic circuits based on selectively grown quantum nanostructures"
Dr. Kiyoshi ASAKAWA, FESTA, Japan
"High-density, high-uniformity and high-spatial-selectivity InAs quantum dots for optical nonlinearity-based nano-photonics"
Dr. Tien T. TSONG, Institute of Physics, Academia Sinica, Taiwan, China
"Electron behavior and interface stackings induced effects on the growth of quantum islands, Pb on Si(111)"
Prof. Gregory J. SALAMO, Univ. of Arkansas, USA
"High Index Surfaces - A Playing Field For Nanostructures"
Prof. Richard NOETZEL, Eindhoven Univ Technol., Netherlands
"Self-organized anisotropic strain engineering: A new concept for quantum dot ordering"

Chairpersons
Dr. Nobuyuki KOGUCHI¹⁾, NIMS (KOGUCHI.Nobuyuki@nims.go.jp), Japan
Dr. Akihiro OHTAKE²⁾, NIMS (OHTAKE.Akihiro@nims.go.jp), Japan
Prof. Emer Mitsuo KAWABE, Tsukuba Univ., NIMS, Japan
Prof. Masakazu ICHIKAWA, Univ. of Tokyo, Japan
Prof. Koichi YAMAGUCHI, Univ. of Electro-Communications, Japan