業績リスト (Updated :2018/10/31)

2018

A: International journals

  1. Solvent-Mediated Shape Engineering of Fullerene (C60) Polyhedral Microcrystals
    Shushu Zheng, Nguyen Thanh Cuong, Susumu Okada, Ting Xu, Wangqiang Shen, Xing Lu, and Kazuhito Tsukagoshi
    Chemistry of Materials in press (2018). [LINK]
  2. Si-doping effect on solution-processed In-O thin-film transistors
    H.Hoang, T.Hori, T. Yasuda, T.Kizu, K.Tsukagoshi, T.Nabatame, B.N.Q.Trinh, A.Fujiwara,
    Materials Research Express in press (2018). [LINK]
  3. Effect of carbon doping on threshold voltage and mobility of carbon-doped In-Si-O thin-film transistors
    K.Kurishima, T.Nabatameb, N.Mitoma, T.Kizu, S.Aikawa, K.Tsukagoshi, A.Ohi, T.Chikyow, A.Ogura,
    Journal of Vacuum Science and Technology B 36 061206/1-7 (2018). [LINK]
  4. Thermal Robustness Evaluation of Non-Volatile Memory using Pt Nanogaps
    Y. Naitoh, H. Suga, T. Abe, K.Otsu, Y.Umeta, T.Sumiya, H.Shima, K.Tsukagoshi, H.Akinaga,
    Applied Physics Express 11 (8) 085202/1-4 (2018). [LINK]
  5. Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides
    Soumya Ranjan Das, Katsunori Wakabayashi, Mahito Yamamoto, Kazuhito Tsukagoshi, Sudipta Dutta
    The Journal of Physical Chemistry C 122 (29)17001–17007(2018). [LINK]
  6. Photochemical Reaction Using Aminobenzenethiol Single Molecular Junction
    Y. Matsuzawa, S. Kaneko, S. Fujii, T. Nishino, K. Tsukagoshi, M. Kiguchi,
    e-Journal of Surface Science and Nanotechnology 16、137-141 (2018). [LINK]
  7. Dependence of Stretch Length on Electrical Conductance and Electronic Structure of the Benzenedithiol
    S. Kobayashi, S. Kaneko, S. Fujii, T. Nishino, K. Tsukagoshi, M. Kiguchi,
    e-Journal of Surface Science and Nanotechnology 16, 145-149 (2018). [LINK]
  8. Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer
    Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi,
    Applied Physics Letters 112, (18) 181902/1-6 (2018). [LINK]
  9. Unveiling the piezoelectric nature of polar α-phase P(VDF-TrFE) at quasi-two-dimensional limit
    Jun Qian, Sai Jiang, Qijing Wang, Yun Li, Shushu Zheng, Shuya Guo, Yi Chang, Jianpu Wang, Xinran Wang, Kazuhito Tsukagoshi, Yi Shi,
    Scientific Report 8, (1) 532/1-9 (2018). [LINK]
  10. Electrostatic Control of Conduction Type in Carbon Nanotube Field-Effect Transistors by Positively Charged Polyvinyl Alcohol Film
    S.Aikawa, S.Kim, T. Thurakitseree, E.Einarsson, T.Inoue, S.Chiashi, K.Tsukagoshi, S.Maruyama
    Applied Physics Letters 112 (1) 013501/1-5 (2018). [LINK]
  11. Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping
    Yuan-Ming Chang, Shih-Hsien Yang, Che-Yi Lin, Chang-Hung Chen, Chen-Hsin Lien, Wen-Bin Jian, Keiji Ueno, Yuen-Wuu Suen, Kazuhito Tsukagoshi, Yen-Fu Lin
    Advanced Materials in press (2018). [LINK]
  12. Fullerene/cobalt porphyrin charge-transfer cocrystals: Excellent thermal stability and high mobility
    Shushu Zheng, Junwen Zhong, Wakana Matsuda, Peng Jin, Muqing Chen, Takeshi Akasaka, Kazuhito Tsukagoshi, Shu Seki, Jun Zhou, Xing Lu
    Nano Reseach 11(4)1917-1927 (2018). [LINK]
  13. Reliability of Al2O3/In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Gate-Bias Stress
    K.Kurishima, T.Nabatame, T.Onaya, K.sukagoshi, A.Ohi. N.Ikeda, T.Nagata, A.Ogura,
    ECS Transactions 86, (11) 13-145 (2018). [LINK]

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2017

A: International journals

  1. Gap Width-independent Spectra in ATP Surface Enhanced Raman Scattering stimulated in Au-gap Array
    S.Watanabe, S.Kaneko, S.Fujii, T.Nishino, S.Kasai, K.Tsukagoshi, M.Kiguchi,
    Japanese Journal of Applied Physics 56(6)05202/1-3 (2017). [LINK]
  2. Virtual substrate method for nanomaterials characterization
    B.Da, J. W. Liu, M. Yamamoto, Y.Ueda, K.Watanabe, N.T.Choung, S.L. Li, K.Tsukagoshi, H.Yoshikawa, H.Iwai, S.Tanuma, H.X.Guo, Z.S. Gao, X.Sun, Z.J.Ding
    Nature Communicarions 8, 15629/1-9 (2017). [LINK]
  3. Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions
    A.Aiba, F.Demir, S.Kaneko, S.Fujii, T.Nishino, K.Tsukagoshi, A.Saffarzadeh, G.Kirczenow, M.Kiguchi,
    Scientific Reports 7, 7949/1-10 (2017). [LINK]
  4. Self-assembly atomic stacking transport layer of two-dimensional titania for perovskite solar cells
    Tzu-Pei Chen, Chung-Wei Lin, Shao-Sian Li, Yung-Han Tsai, Cheng-Yen Wen, Wendy Lin, Fei-Man Hsiao, Ya-Ping Chiu, Kazuhito Tsukagoshi, Minou Osada, Takayoshi Sasaki, Chun-Wei Chen,
    Advanced Energy Materials in press (2017). [LINK]
  5. Radial Interference Contrast in in-situ SEM Observation of Metal Oxide Semiconductor Film Crystallization
    Kunji Shigeto, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame,
    Microscopy and Microanalysis 23 (S1), 1512-1513 (2017). [LINK]
  6. Amorphous oxide semiconductor In-Si-O fabricated by solution process
    H. E. Jan, T.Nakamura, T.Koga, T.Ina, T.Uruga, T.Kizu, K.Tsukagoshi, T.Nabatame, A.Fujiwara
    Journal of Electronic Materials 46 (6) 3610-3614 (2017). [LINK]
  7. In-situ Observation of Formation Process of Free Standing Au Nano Wire with Scanning Electron Microscope
    A.Aiba, S.Kaneko, S.Fujii, T.Nishino, K.sukagoshi, M.Kiguchi
    Nanotechnology 28, 105707/1-7 (2017). [LINK]
  8. Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors
    X.Gao, M.-F. Lin, B.-H.Mao, M.Shimizu, N.Mitoma, T.Kizu, W.Ouyang, T.Nabatame, Z.Liu, K.Tsukagoshi, S.-D.Wang,
    Journal of Physics D: Applied Physics 50 (2) 25102/1-6 (2017). [LINK]

B: 邦文解説

C: 本/ハンドブック

  1. 丸文財団20周年記念出版「科学技術立国 日本を築くⅡ 次代を拓く気鋭の研究
    担当 “原子膜エレクトロニクス"
    塚越一仁
    監修 榊裕之、丸文財団、 日刊工業新聞社、 2017年出版(ISBN-13: 978-4526076787).

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2016

A: International journals

  1. Phase transitions from semiconductive amorphous to conductive polycrystalline in Indium Silicon Oxide thin films
    N.Mitoma, B.Da, H.Yoshikawa, M.akahashi, K.Ito, T.Nabatame, M.Takahashi, K.Ito, T.Kizu, A.Fujiwara, K. Tsukagoshi
    Applied Physics Letters 109 (22) 221903/1-5 (2016). [LINK]
  2. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps
    H.Suga, H.Suzuki, Y.Shinomura, S.Kashiwabara, K.Tsukagoshi, T.Shimizu, Y.Naitoh
    Scientific Reports 6, 34961/1-9 (2016). [LINK]
  3. Two-dimensional MoTe2 materials: from synthesis, identification, charge transport to electronics applications
    Y. –M. Cang, C.-Y.Lin, Y.-F. Lin, K.Tsukagoshi
    Japanese Journal of Applied Physics 55 (11) 1102A1/1-6 (2016). [LINK]
  4. High-Performance Non-volatile Field-Effect Transistor Memories Using Amorphous Oxide Semiconductor and Ferroelectric Polymer
    Y.Wang, T. Kizu, L. Song, S.Jiang, J.Qian, Q.Wang, Y.Jiang, Y.Zhang, Y.Shi, Y.Zheng, T.Nabatame, K.Tsukagoshi, Y.Li,
    Journal of Materials Chemistry C 4 (34) 7917-7923 (2016). [LINK]
  5. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
    T. Kizu, S.Aikawa, T. Nabatame, A.Fujiwara, K.Ito, M.Takahashi, K.Tsukagoshi,
    Jounal of Applied Physics 120 (4) 045702/1-4 (2016). [LINK]
  6. Self-Powered Graphene Thermistor
    R.Bendia, V.Bhavanasia, K.Paridaa, V.C.Nguyena, A.Sumbojaa, K.Tsukagoshi, P.S.Lee,
    Nano Energy 26, 586–594 (2016). [LINK]
  7. Carrier Polarity Control in α-MoTe2 Schottky Junctions Due to Weak Fermi Level Pinning
    S.Nakaharai, M.Yamamoto, K.Ueno, K.Tsukagoshi,
    ACS Applied Materials & Interfaces 8 (23) 14732–14739 (2016).. [LINK]
  8. Determination of the number of atoms present in nano contact based on shot noise measurements with highly stable nano fabricated electrodes
    R.Takahashi, S.Kaneko, S.Marqués-González, K.Tsukagoshi, M.Kiguchi,
    Nanotechnology 27 (29) 295203/1-7 (2016) [LINK]
  9. Surface Oxides on Single- and Few-layer WSe2 as Controlled Dopants and Low-Barrier Contacts
    Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi,
    Nano Letters 16 (4) 2720–2727 (2016). [LINK]
  10. Anomalous behavior of 1/f noise in graphene near the charge neutrality point
    S. Takeshita, S. Matsuo, T. Tanaka, S. Nakaharai, K. Tsukagoshi, T. Moriyama, T. Ono, T. Arakawa, K. Kobayashi,
    Applied Physics Letters 108 (10) 103106/1-4 (2016). [LINK]
  11. Site selection in single-molecule junction for highly reproducible molecular electronics
    S.Kaneko, D.Murai, S.Marqués-González, H.Nakamura, Y.Komoto, S.Fujii, T.Nishino, KIkeda, K.Tsukagoshi, M.Kiguchi,
    Journal of the American Chemical Society 138 (4) 1294-1300 (2016). [LINK]
  12. Hunting for Monolayer Oxide Nanosheets and Their Architectures
    Hyung-Jun Kim, Minoru Osada, Yasuo Ebina, Wataru Sugimoto, Kazuhito Tsukagoshi, Takayoshi Sasaki,
    Scientific Reports 6, 19402/1-9 (2016). [LINK]
  13. Electrical transport and mobility engineering in two-dimensional van der Waals semiconductors
    Song-Lin Li, Kazihito Tsukagoshi, Emanuele Orgiu, Paolo Samorì,
    Chemical Society Reviews 45 (1) 118-151 (2016). [LINK]
  14. Physical and electrical properties of amorphous ruthenium-doped indium (III) oxide thin films
    K. Taweesup, I.Yamamoto, T. Chikyo, G.Lohthongkum, K.Tsukagoshi, T.Ohishi, S.Tungasmita, P.Visuttipitukul, T. Nabatame,
    Thin Solid Films 598, 126-130 (2016). [LINK]
  15. Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability
    K. Kurishima, T.Nabatame, T.Kizu, N.Mitoma, K.Tsukagoshi, T.Sawada, A.Ohi, I.Yamamoto, T.Ohishi, T.Chikyow, A. Ogura,
    ECS Transaction 5 (10) 149-156 (2016). [LINK]

B: 邦文解説

C: 本/ハンドブック

  1. カルコゲナイド系層状物質の最新研究
    担当 “カルコゲナイド原子膜半導体におけるキャリアの注入と散乱"
    塚越一仁
    監修 上野啓司、安藤淳、島田敏宏、シーエムシー出版、 2016年出版 (ISBN:978-4-7813-1166-1).
  2. カルコゲナイド系層状物質の最新研究
    担当 “遷移金属ダイカルコゲナイドのラマン分光"
    山本真人、上野啓司、塚越一仁
    監修 上野啓司、安藤淳、島田敏宏、シーエムシー出版、 2016年出版 (ISBN:978-4-7813-1166-1).
  3. カーボンナノチューブ・グラフェンの応用研究最前線
    担当 “ウェハスケール・トップダウン加工でのグラフェントランジスタ試作"
    中払周,飯島智彦, 小川真一, 八木克典, 原田直樹, 林賢二郎, 近藤大雄, 高橋慎, 塚越一仁, 佐藤信太郎, 横山直樹
    監修 丸山茂夫、株式会社エヌ・ティー・エス、2016年出版 (ISBN:978-4-86043-456-4).

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2015

A: International journals

  1. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film
    Takio Kizu, Nobuhiko Mitoma, Miki Miyanaga, Hideaki Awata, Toshihide Nabatame, Kazuhito Tsukagoshi,
    Journal of Applied Physics  118 (12) 125702/1-4 (2015). [LINK]
  2. Carrier Injection and Scattering in Atomically Thin Chalcogenides [Review]
    Songlin Li, K.Tsukagoshi,
    Journal of the Physical Society of Japan 84 (12) 121011/1-10 (2015). [LINK]
  3. Influence of Al2O3 insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
    K.Kurishima, T.Nabatame, M.Shimizu, N.Mitoma, T.Kizu, S.Aikawa, K.Tsukagoshi, A.Ohi, T.Chikyow, A.Ogura,
    Journal of Vaccum Science and Technology A33 (6) 061506/1-6 (2015). [LINK]
  4. Environmental Changes of Charge Noise in Layered MoTe2 Conducting Channels
    Yen-Fu Lin, Yuen-Wuu Suen, Mahito Yamamoto, Song-Lin Li, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi,
    Advanced Materials 27 (42) 6612-6619 (2015). [LINK]
  5. Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface
    Huabin Sun, Yao Yin, Qijing Wang, Qian Jun, Kazuhito Tsukagoshi, Yi Shi, Yun Li,
    Applied Physics Letters 107 (5) 053304/1-4 (2015). [LINK]
  6. Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
    Y.-F.Lin, C.-H.Chang, T.-C.Hung, W.-B.Jian, K.Tsukagoshi, Y.-H.Wu, L.Chang, Z.Liu, J.Fang
    Scientific Reports 5, 13035/1-7 (2015). [LINK]
  7. Edge Mixing Dynamics in Graphene p-n Junctions in the Quantum Hall Regime
    S.Matsuo, S.Takeshita, T.Tanaka, S.Nakaharai, K.Tsukagoshi, T.Moriyama, T.Ono, K.Kobayashi,
    Nature Communications 6, 8066/1-6 (2015). [LINK]
  8. Parity effect of quantum Hall edge transport around graphene antidots
    S.Matsuo, S.Nakaharai, K.Komatsu, K.Tsukagoshi, T.Moriyama, T.Ono, K.Kobayashi,
    Scientific Reports 5, 11723/1-7 (2015). [LINK]
  9. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
    Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen-Fu Lin, Song-Lin Li, Kazuhito Tsukagoshi,
    ACS nano 9 (6), 5976-5983 (2015). [LINK]
  10. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
    S.Aikawa, N.Mitoma,T.Kizu, X.Gao, M.-F.Lin, T.Nabatame, K.Tsukagoshi,
    Applied Physics Letters 106 (19) 1921103/1-5 (2015). [LINK]
  11. Double resonance Raman modes in MoTe2 few layers
    Huaihong Guo, Teng Yang, Mahito Yamamoto, Ryo Ishikawa, Keiji Ueno, Kazuhito Tsukagoshi, M. S. Dresselhaus, R. Saito,
    Physical Review B 91 (20) 205415/1-8 (2015). [LINK]
  12. Wafer Scale Fabrication of Transistors using CVD-Grown Graphene and its Application to Inverter Circuit
    S.Nakaharai, T.Iijima, S.Ogawa, K.Yagi, N.Harada, K.Hayashi, D.Kondo, M.Takahashi, S.-L.Li, K.Tsukagoshi, S.Sato, N.Yokoyama,
    Japanese Journal of Applied Physics 54, 04DN06/1-4 (2015). [LINK]
  13. Self-limiting layer-by-layer oxidation of atomically thin WSe2
    M. Yamamoto, S.Dutta, S.Aikawa, S.Nakaharai, K.Wakabayashi, M.S. Fuhrer, K.Ueno, K.Tsukagoshi,
    Nano Letters 15 (3) 2067-2073 (2015). [LINK]
  14. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants
    N.Mitoma, S.Aikawa, W.Ou-Yang, X.Gao , T.Kizu , M.-F.Lin, A.Fujiwara, T.Nabatame, K.Tsukagoshi,
    Applied Physics Letters 106 (4) 042106/1-5 (2015). [LINK]
  15. Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation ofhafnium and annealing process
    M.-F. Lin, X.Gao, N.Mitoma, T.Kizu, W. Ou-Yang , S.Aikawa, T.Nabatame, K.Tsukagoshi,
    AIP Advances 5 (1) 017116/1-9 (2015). [LINK]
  16. Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors
    J.Wang, C. Yan, M.-F.Lin, K.Tsukagoshi, P.-S.Lee,
    Journal of Materials Chemistry C 3 (3) 596-600 (2015). [LINK]

B: 邦文解説

C: 本/ハンドブック

ページトップへ

2014

A: International journals

  1. Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
    Song-Lin Li, Katsuyoshi Komatsu, Shu Nakaharai, Yen-Fu Lin, Mahito Yamamoto, Xiangfeng Duan, Kazuhito Tsukagoshi,
    ACSnano 8 (12) 12836-12842 (2014). [LINK]
  2. Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation
    H.Sun, Q.Wang, Y.Li, Y.-F.Lin, Y.Wang, Y.Yin, Y.Xu, C.Liu, K.Tsukagoshi, L.Pan, X.Wang, Z.Hu, Y.Shi,
    Scientific Reports 4, 7227 (2014). [LINK]
  3. Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors
    S.Nakaharai, T.Iijima, S.Ogawa, S.-L.Li, K.Tsukagoshi, S.Sato, N.Yokoyama
    IEEE Transactions on Nanotechnology 13 (6) 1039-1043 (2014). [LINK]
  4. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors
    W.Ou-Yang, N.Mitoma, T.Kizu, X.Gao, M.-F.Lin, T.Nabatame, K.Tsukagoshi,
    Applied Physics Letters 105 (16) 163503/1-5 (2014). [LINK]
  5. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors
    X.Gao, S.Aikawa, N.Mitoma, M.-F.Lin, T.Kizu, T.Nabatame, K.Tsukagoshi,
    Applied Physics Letters 105 (2) 023503/1-5 (2014). [LINK]
  6. Spin injection and detection in graphene lateral spin valve using yttrium-oxide tunneling barrier
    K.Komatsu, S.Kasai, S.-L.Li, S.Nakaharai, N.Mitoma, M.Yamamoto, K.Tsukagoshi,
    Applied Physics Express 7 (8) 085101/1-4 (2014). [LINK]
  7. Highly stable Au atomic contacts covered with benzenedithiol under ambient conditions
    D.Murai, T.Nakazumi, S.Fujii, Y.Komoto, K.Tsukagoshi, C.Motta, M.Kiguchi,
    Physical Chemistry Chemical Physics 16, 15662-15666 (2014). [LINK]
  8. Metal atomic contacts under defined environment condition
    T.Nakazumi, D.Murai, K.Tsukagoshi, M.Kiguchi,
    Transactions of the Materials Research Society of Japan 39, 225-229 (2014). [LINK]
  9. Structure and Transport Properties of Interface between Merged Hexagonal Domains of CVD Graphene Grown on Crystalline Cu Films
    Y.Ogawa, K.Komatsu, K. Kawahara, M.Miyashita, M.Tsuji, K. Tsukagoshi, H. Ago,
    Nanoscale 6 (13) 7288-7294 (2014). [LINK]
  10. Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
    T.Kizu , S.Aikawa , N.Mitoma , M.Shimizu , X.Gao , M.-F. Lin, T.Nabatame, K.Tsukagoshi
    Applied Physics Letters 104 (15) 152103/1-5 (2014). [LINK]
  11. Control of molecular orientation and morphology in organic bilayer solar cells: copper phthalocyanine on gold nanodots
    T.Sasaki, K.Tabata, K.Tsukagoshi, A.Beckel, A.Lorke, Y.Yamamoto
    Thin Solid Films 562 () 467-470 (2014). [LINK]
  12. Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
    Mahito Yamamot, Sheng Tsung Wang, Meiyan Ni, Y.-F.Lin, S.-L.Li, S.Aikawa, W.-B.Jian, K.Ueno, K.Wakabayashi, K.Tsukagoshi
    ACS nsno 8 (4) 3895-3903 (2014). [LINK]
  13. Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
    N.Mitoma, S.Aikawa, X.Gao, T.Kizu, M.Shimizu, M.-F. Lin, T.Nabatame, K.Tsukagoshi
    Applied Physics Letters 104 (10) 102103/1-5 (2014). [LINK]
  14. Patterning technology for solution-processed organic crystal field-effect transistors
    Yun Li, Huabin Sun, Yi Shi, Kazuhito Tsukagoshi
    Science and Technology of Advanced Materials 15 (2) 024203/1-25 (2014). [review] [LINK]
  15. Large modulation of effective damping constant using spin Hall effect
    S.Kasai, K.Kondou, H.Sukegawa, S.Mitani, K.Tsukagoshi, Y.Ohtani,
    Applied Physics Letters 104 (9) 092408/1-3 (2014). [LINK]
  16. Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
    Yen-Fu Lin, Y.Xu, S.-T.Wang, S.-L.Li, M.Yamamoto, A. Aparecido-Ferreira, W.Li, H.Sun, W.-B.Jian, K.Ueno, K.Tsukagoshi,
    Advanced Materials 26 (20) 3263-3269 (2014). [LINK]
  17. Strain-tunable Superconducting Field-effect Transistor with an Organic Strongly-correlated Electron System
    M.Suda, Y. Kawasugi, T. Minari, K.Tsukagoshi, R.Kato, H. M.Yamamoto,
    Advanced Materials 26 (21) 3490-3495 (2014). [LINK]
  18. Large [6,6]-phenyl C61 butyric acid methyl hexagonal crystals grown by solvent-vapor annealing
    Y.Yang, C.Liu, S.Gao, Y.Li, X.Wang, Y.Xu. P.Wang, Y.Zhao, K.Tsukagoshi, Y.Shi,
    Materials Chemistry and Physics 145 (3) 327-333 (2014). [LINK]
  19. Barrier inhomogeneities at vertically stacked graphene-based heterostructures
    Yen-Fu Lin, W.Li, S.-L.Li, Y. Xu, A.Aparecido-Ferreira, K.Komatsu, H.Sun, S.Nakaharai, K.Tsukagoshi,
    Nanoscale 6 (2) 795-799 (2014). [LINK]
  20. Semiconducting properties of bilayer graphene modulated by electric field for next-generation atomic-film electronics
    K.Tsukagoshi, S.-L.Li, H.Miyazaki, A.Aparecido-Ferreira, S.Nakaharai,
    Journal of Physics D: Applied Physics 47 (9) 094003/1-17 (2014). [REVIEW] [LINK]

B: 邦文解説

  1. インジウム系酸化膜トランジスタの特性と必要性
    塚越一仁
    鉱山 第67巻、第9号、24-32 (2014).. [LINK]
  2. 原子層エレクトロニクスを目指したカルコゲナイド系層状物質の基礎物性と薄膜形成手法
    上野啓司,塚越一仁
    応用物理 2014年4月号 274-278 (2014). [LINK]

C: 本/ハンドブック

ページトップへ

2013

A: International journals

  1. Self-Aligned Formation of Sub-1-nm Gaps Utilizing Electromigration during Metal Deposition
    Y.Naitoh, T.Ohata, R.Matsushita, E.Okawa, M.Horikawa, M.Oyama, M.Mukaida, D.F.S.Wang, M.Kiguchi, K.Tsukagoshi, T.Ishida
    ACS Applied Materials & Interfaces 5 (24 12869-12875 (2013). [LINK]
  2. Doping Control in In-X-O Metal Oxide Semiconductors for Thin-Film Transistor Applications
    S.Aikawa, T.Nabatame, K.Tsukagoshi,
    Applied Physics Letters 103 (18) 172105/1-5 (2013). [LINK]
  3. Current on-off operation of graphene transistor with dual gates and He ion irradiated channel
    S.Nakaharai, T.Iijima, S.Ogawa, S. -L. Li, K.Tsukagoshi, S.Sato, N.Yokoyama,
    Physica Status Solidi (c)-Current topics in solid state physics 10 (11) 1608-1611 (2013). [LINK]
  4. Low-Cost fully transparent ultraviolet photodetectors based on electrospun ZnO-SnO2 heterojunction nanofibers
    W.Tian, T.Zhai, C.Zhang, S.-L.Li, X.Wang, F.Liu, D.Liu, X.Cai, K.Tsukagoshi, D.Golberg, Y. Bando,
    Advanced Materials 25 (33) 4625-4630 (2013). [LINK]
  5. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal Boron Nitride substrates
    M.-Y. Chan, K. Komatsu, S.-L.Li, Y.Xu, P.Darmawan, H.Koramochi, S.Nakaharai, K.Watanabe, T.Taniguchi, K.Tsukagoshi,
    Nanoscale 5 (20) 9572-9576 (2013). [LINK]
  6. Understanding Thickness Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise
    Y.Xu, C.Liu, W.Scheideler, S.-L.Li, W.Li, Y.-F.Lin, F.Balestra, G.Ghibaudo, K.Tsukagoshi,
    IEEE Electron Device Letters 34 (10) 1298-1300 (2013). [LINK]
  7. Rational Design of High Performance All Solid State Flexible Micro-Supercapacitor on a Paper
    X.Wang, A.Sumboja, W.-L.Foo, C.-Y. Yan, K.Tsukagoshi, P.-S.Lee,
    RSC Advances 3 (36) 15827-15833 (2013). [LINK]
  8. High-Performance Top-Gated Monolayer SnS2 Field-Effect Transistors and Their Integrated Logic Circuits
    H.S.Song, S.-L.Li, L.Gao, Y. Xu, K.Ueno, Y.B.Cheng, K.Tsukagoshi,
    Nanoscale 5 (20) 9666-9670 (2013). [LINK]
  9. Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
    Song-Lin Li,K.Wakabayashi, Y.Xu, S.Nakaharai, K.Komatsu, W.-W.Li, Y.-F.Lin, A.Aparecido-Ferreira, K.Tsukagoshi,
    Nano Letters 13 (8) 3546-3552 (2013). [LINK]
  10. Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric
    W.-W. Li, S.-L.Li, K.Komatsu, A.A. Ferreira, Y.-F. Lin, Y.Xu, M.Osada, T.Sasaki, K.Tsukagoshi
    Applied Physics Letters 103 (2) 023113/1-5 (2013). [LINK]
  11. Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film
    H.Ago, K.Kawahara, Y.Ogawa, S.Tanoue, M.A.Bissett, M.Tsuji1, H.Sakaguchi, R.J.Koch, F.Fromm, T.Seyller, K.Komatsu, K.Tsukagoshi
    Applied Physics Express 6 (7) 075101/1-4 (2013). [LINK]
  12. Conduction Tuning of Graphene Based on Defect-Induced Localization
    S.Nakaharai, T.Iijima, S.Ogawa, S.Suzuki, S.-L.Li, K.Tsukagoshi, S.Sato, N.Yokoyama
    ACSnano 7 (7) 5694-5700 (2013). [LINK]
  13. Flexible field-effect transistor arrays with patterned solution-processed organic crystals
    Y.Li, C.Liu, Y.Wang, Y.Yang, X.Wang, Y.Shi, K.Tsukagoshi,
    AIP Advances 3 (5) 052123/1-6 (2013). [LINK]
  14. How Small The Contacts Could Be Optimal for Nanoscale Organic Transistors?
    Y.Xu, C.Liu, W.Scheideler, P.Darmawan, S.-L.Li, F.Balestra, G.Ghibaudo, K.Tsukagoshi,
    Organic Electronics 14 (7) 1797-1804 (2013). [LINK]
  15. Thin-Film Transistors Fabricated with Low Temperature Process Based on Ga- and Zn-Free Amorphous Oxide Semiconductor
    S.Aikawa, P.Darmawan, K.Yanagisawa, T.Nabatame, Y.Abe, K.Tsukagoshi,
    Applied Physics Letters 102 (10) 102101/1-4 (2013). [LINK]
  16. Self-assembly of Semiconductor/Insulator Interface in One-Step Spin-Coating - A Versatile Approach for High-Performance Organic Field-Effect Transistors
    C.Liu, Y.Li, A.Kumatani, K.Tsukagoshi,
    Physical Chemistry Chemical Physics 15 (21) 7917-7933 (2013). [REVIEW] [LINK]
  17. Flexible SnO2 Hollow Nanosphere film based High-Performance Ultraviolet Photodetector
    W.Tian, C.Zhang, T.Zhai, S.-L.Li, X.Wang, M.Liao, K. Tsukagoshi, D.Golberg, Y.Bando,
    Chemical Communications 49 (36) 3739-3741 (2013). [LINK]
  18. Joule's law for organic transistors exploration: case of contact resistance
    Y.Xu, C.Liu, Y.Li, T.Minari, P.Darmawan, F.Balestra, G.Ghibaudo, K.Tsukagoshi,
    Journal of Applied Physics 113 (6) 064507/1-5 (2013). [LINK]
  19. Contact Thickness Effects to Bottom-Contact Coplanar Organic Field-Effect Transistors
    Y.Xu, W.Scheideler, C.Liu, F.Balestra, G.Ghibaudo, K.Tsukagoshi,
    IEEE Electron Device Letters 34 (4) 535-537 (2013). [LINK]
  20. On practical charge injection at metal and organic semiconductor interface
    A.Kumatani, P.Darmawan, T.Minari, K.Tsukagoshi,
    Scientific Reports 3, 1026/1-6 (2013). [LINK] [注目の論文]
  21. In-situ purification to eliminate the influence of impurities in solution-processed organic crystals for transistor arrays
    Y.Li, C.Liu, M.V. Lee, Y.Xu, X.Wang, Y. Shi, K.Tsukagoshi,
    Journal of Materials Chemistry C 1 (1) 1352-1358 (2013). [LINK]
  22. Structural and charge transport characteristics of graphene layers obtained from CVD thin film and bulk graphite materials
    A.V.Tyurnina, K.Tsukagoshi, H.Hiura, A.N.Obraztsov,
    Carbon 52 (1) 49-55 (2013). [LINK]

B: 邦文解説

  1. デバイス応用に向けたグラフェン基板の研究開発
    日浦 英文, 塚越 一仁
    月刊Material Stage 13 (3) 13-17 (2013).
  2. ランダムなポテンシャル擾乱を導入したグラフェンの金属‐絶縁体転移と電気伝導の電界制御
    中払周、塚越一仁
    パリティ Vol.28 (5) 32-34 (2013).
  3. 超フレキシブルで透明なカーボンナノチューブトランジスタ
    相川慎也,塚越 一仁,丸山 茂夫
    O plus E (アドコム・メディア(株)) 35 (4) 350-355 (2013).

C: 本/ハンドブック

ページトップへ

2012

A: International journals

  1. Enhanced current-rectification in bilayer graphene with an electrically tuned sloped band gap
    A.A.Ferreira, H.Miyazaki, S.-L.Li, K.Komatsu, S.Nakaharai, K.Tsukagoshi
    Nanoscale 4 (24) 7842-7846 (2012). [LINK]
  2. Single-Crystalline Nanogap Electrodes: Enhancing the Nanowire-Breakdown Process with a Gaseous Environment
    H.Suga, T.Sumiya, S.Furuta, R.Ueki, Y.Miyazawa, T.Nishijima, J.Fujita, K.Tsukagoshi, T.Shimizu, Y.Naitoh
    ACS Applied Materials & Interfaces 4 (10) 5542-5546 (2012). [LINK]
  3. Control of neural signal propagation in neuron by three terminals electrical method
    Y.Aoyagi , M.Mitsui, T.Miyadera, K.Tsukagoshi, H.Kamiguch
    Electronics Letters 48 (8) 1093-1095 (2012). [LINK]
  4. Controlling the crystal formation in solution-process for organic field-effect transistors with high-performances
    C.Liu, Y.Li, Y.Xu, T.Minari, S.-L.Li, K.Takimiya, K.Tsukagoshi,
    Organic Electronics 13 (12) 2975-2984 (2012). [LINK]
  5. Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
    S.-L. Li, H.Miyazaki, H.Song, H.Kuramochi, S.Nakaharai, K.Tsukagoshi,
    ACS nano 6 (6) 7381-7388 (2012). [LINK]
  6. Liquid Phase Growth of Graphene on Silicon Carbide
    H.Hiura, M.V.Lee, A.V.Tyurnina, K.Tsukagoshi,
    Carbon 50 (14) 5076-5084 (2012). [LINK]
  7. Opimal structure for high performance and low contact resistance organic fieldeffect transistors using contact-doped coplanar and pseudo-staggered device architectures
    P.Darmawan, T. Minari, Y.Xu, S.Li, H.Song, M.Chan, K.Tsukagoshi,
    Advanced Functional Materials 22 (21) 4577-4583 (2012). [LINK]
  8. Evaluation of spin Hall angle and spin diffusion length by using spin-current induced ferromagnetic resonance
    K.Kondou, H.Sukegawa, S.Mitani, K.Tsukagoshi, S.Kasai,
    Applied Physics Express 5 (7) 073002/1-3 (2012). [LINK]
  9. Tunable contact resistance in double-gate organic field-effect transistors
    Y.Xu, P.Darmawan, C.Liu, Y.Li, T.Minari, G.Ghibaudo, K.Tsukagoshi,
    Organic Electronics 13 (9) 1583-1588 (2012). [LINK]
  10. Solution-processed, Self-aligned Organic Single Crystal Arrays with Controlled Crystal Orientation
    A.Kumatani, C.Liu, P.Darmawan, Y.Li, K.Takimiya, T.Minari, K.Tsukagoshi
    Scientific Reports 2, 00393/1-6 (2012). [LINK] [注目の論文]
  11. Temperature dependence of frequency response characteristics in organic field-effect transistors
    X.Lu, T.Minari, C.Liu, A.Kumatani, J.-M.Liu, K.Tsukagoshi
    Applied Physics Letters 100 (18) 183308/1-3 (2012). [LINK]
  12. Concerted Chemical-Mechanical Reaction in Catalyzed Growth of Confined Graphene Layers into Hexagonal Disks
    M.V. Lee, H.Hiura, H.Kuramochi, K.Tsukagoshi
    Journal of Physical Chemistry C 116 (16) 9106-9113 (2012). [LINK]
  13. Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
    H. S. Song, S. L. Li, H. Miyazaki, S. Sato, K. Hayashi, A. Yamada, N. Yokoyama, K. Tsukagoshi
    Scientific Reports 2, 00337/1-6 (2012). [LINK] [注目の論文]
  14. Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
    H.Miyazaki, S.-L. Li, S.Nakaharai, K. Tsukagoshi
    Applied Physics Letters 100 (16) 163115/1-4 (2012). [LINK]
  15. Surface Selectively Deposited Organic Single-crystal Transistor Arrays with High Device Performance
    Y.Li C.Liu, A.Kumatani, P.Darmawan, T.Minari, K.Tsukagoshi,
    Molecular crystal and Liquid crystal 566 (1) 13-17 (2012). [LINK]
  16. Forming Semiconductor/Dielectric Double Layers by One-Step Spin-Coating for Enhancing the Performance of Organic Field-Effect Transistors
    C.Liu, Y.Li, T.Minari, K.Takimiya, K.Tsukagoshi
    Organic Electronics 13 (7) 1146-1151 (2012). [LINK]
  17. Direct formation of organic semiconducting single crystals by solvent vapor annealing on a polymer base film
    C.Liu, T.Minari, Y.Li, A.Kumatani, M.V.Lee, S.H.A.Pan, K.Takimiya, K.Tsukagoshi
    Journal of Materials Chemistry 22 (17) 8462-8469 (2012). [LINK]
  18. High-Performance Organic Field-Effect Transistors Based on Dihexyl-Substituted Dibenzo[d,d']thieno[3,2-b;4,5-b']dithiophene
    Y.Miyata, E.Yoshikawa, T.Minari, K.Tsukagoshi, S.Yamaguchi,
    Journal of Materials Chemistry 22 (16) 7715-7717 (2012). [LINK]
  19. Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact
    T.Minari, P.Darmawan, C.Liu, Y.Li, Y.Xu, K.Tsukagoshi
    Applied Physics Letters 100 (9) 093303/1-4 (2012). [LINK]
  20. Solution-processed organic crystals for field-effect transistor arrays with smooth semiconductor/dielectric interface on paper substrates
    Y.Li, C.Liu, Y. Xu, T. Minari, P. Darmawan, K.Tsukagoshi
    Organic Electronics 13 (5) 815-819 (2012). [LINK]
  21. Role for Atomic Terraces and Steps of Epitaxial Graphene in Electron Transport Properties
    H.Kuramochi, S.Odaka, K.Morita, S.Tanaka, H.Miyazaki, M.V.Lee, H.Hiura, K.Tsukagoshi
    AIP advances 2 (1) 012115/1-10 (2012). [LINK]
  22. Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors
    P.Darmawan, T.Minari, A.Kumatani, Y.Li, C.Liu, K.Tsukagoshi
    Applied Physics Letters 100 (1) 013303/1-3 (2012). [LINK]
  23. Controlled Self-Assembly of Organic Semiconductors for Solution-Based Fabrication of Organic Field-Effect Transistors
    T.Minari, C.Liu, M.Kano, K.Tsukagoshi
    Advanced Materials 24 (2) 299-306 (2012). [LINK]
  24. A Concept of Graphene P-I-N Junction Dual-Gate Transistor for Excellent Cut-Off Property
    S.Nakaharai, T.Iijima, S.Ogawa, H.Miyazaki, S.-L.Li, K.Tsukagoshi, S.Sato, N.Yokoyama,
    Applied Physics Express 5 (1) 015101/1-3 (2012). [LINK]
  25. Observation of tunneling current in semiconducting graphene p-n junctions
    H.Miyazaki, S.-L.Li, H.Hiura, K.Tsukagoshi, A.Kanda
    Journal of Physical Society of Japan 81 (1) 014708/1-7 (2012). [LINK]
  26. Large plate-like organic crystals from direct spin-coating for solution-processed field-effect transistor arrays with high uniformity
    Y.Li, C.Liu, A.Kumatani, P.Darmawan, T.Minari, K.Tsukagoshi
    Organic Electronics 13 (2) 364-272 (2012). [LINK]
  27. Controllable Gallium Melt-Assisted Interfacial Graphene Growth on SiC
    M.V.Lee, H.Hiura, A.Tyurnina, K.Tsukagoshi
    Diamond and Related Materials 24, 34-38 (2012). [LINK]
  28. Metal-diffusion-induced ITO nanoparticles at organic/ITO interface
    Y.Li, C.Liu, S.Tong, L.Pan, L.Pu, T.Minari, K.Tsukagoshi, Y.Shi
    Journal of Physics D: Applied Physics 45 (16) 165104/1-4 (2012). [LINK]
  29. Charge trapping at organic/self-assembly-molecule interfaces studied by electrical switching behavior in crosspoint structure
    Y.Li, C.Liu, L.Pan, L.Pu, K.Tsukagoshi, Y.Shi
    Journal of Physics D: Applied Physics 45 (2) 025304/1-5 (2012). [LINK]

B: 邦文解説

  1. 溶液から造る結晶有機トランジスタ
    塚越一仁
    応用物理学会誌 小特集:「広がりを見せるナノエレクトロニクス:ナノ材料・ナノ構造で発現する機能と可能性」 (表紙に採用) 第81巻、12号 996-1001 (2012). [LINK]

C: 本/ハンドブック

  1. 有機デバイスのための塗布技術
    担当 “溶液から自己二層分離法で造る結晶有機トランジスタ"
    塚越一仁、李昀、劉川、三成剛生
    監修 竹谷純一、シーエムシー出版, 2012年4月出版 (ISBN:978-4-7813-0554-7).
  2. グラフェンが拓く材料の新領域 —物性・作製から実用化まで—
    担当 “次世代集積回路のためのグラフェン半導体特性"
    塚越一仁、宮崎久生、黎 松林
    (株)エヌ・ティー・エス 2012年出版 (ISBN: 978-4-86469-035-5).
  3. グラフェンの機能と応用展望II
    担当 “グラフェンの伝導電荷極性制御と素子化の試み"
    塚越一仁、中払周、
    監修 斉木幸一朗、シーエムシー出版,2012年12月出版(ISBN: 978-4-7813-0677-3).

ページトップへ

2011

A: International journals

  1. Carrier mobility in organic field-effect transistors
    Y.Xu, M.Benwadih, R.Gwoziecki, R.Coppard, T.Minari, C.Liu, K.Tsukagoshi, J.A.Chroboczek, F.Balestra, G.Ghibaudo
    Journal of Applied Physics 110 (10) 104513/1-9 (2011). [LINK]
  2. Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors
    Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra and G. Ghibaudo
    Organic Electronics 12 (12) 2019-2024 (2011). [LINK]
  3. Electric-field-induced Mott transition in an organic molecular crystal
    Y.Kawasugi, H.M.Yamamoto, N.Tajima, T.Fukunaga, K.Tsukagoshi, R.Kato
    Physical Review B 84 (12) 125129/1-9 (2011). [LINK]
  4. Bottom Contact Pentacene Thin Film Transistors on Silicon Nitride
    J.Stott, A.Kumatani, T.Minari, K.Tsukagoshi, S.Heutz, G.Aeppli, A.Nathan
    IEEE Electron Device Letters 32 (9) 1305-1307 (2011). [LINK]
  5. Patterning solution-processed organic single crystal transistors with high device performance
    Y.Li, C.Liu, A.Kumatani, P.Darmawan, T.Minari, K.Tsukagoshi
    AIP Advances 1 (2) 022149/1-7 (2011). [LINK]
  6. Introducing Non-Uniform Strain to Graphene Using Dielectric Nanopillars
    H.Tomori, A.Kanda, H.Goto, Y.Ootuka, K.Tsukagoshi, S.Moriyama, E.Watanabe, D.Tsuya,
    Applied Physics Express 4 (7) 075102/1-3 (2011). [LINK]
  7. Modeling of static electrical properties in organic field-effect transistors
    Yong Xu, T.Minari, K.Tsukagoshi, R.Gwoziecki, R.Coppard, M.Benwadih, J.A.Chroboczek, F.Balestra, G.Ghibaudo
    Journal of Applied Physics 110 (1) 014510/1-12 (2011). [LINK]
  8. Effect of air exposure on frequency response characteristics in pentacene-based organic devices
    Xubing Lu, Takeo Minari, Akichika Kumatani, Chuan Liu, Kazuhito Tsukagoshi
    Applied Physics Letters 98 (24) 243301/1-3 (2011). [LINK]
  9. Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
    S.-L.Li, H.Miyazaki, M.V.Lee, C.Liu, A.Kanda, K.Tsukagoshi
    Small 7 (11) 1552-1556 (2011). [LINK] [Materials Views]
  10. Control of device parameters by active layer thickness in organic field-effect transistors
    M.Kano, T.Minari, K.Tsukagoshi, H.Maeda
    Applied Physics Letters 98 (7) 073307/1-3 (2011). [LINK]
  11. Origin of low-frequency noise in pentacene field-effect transistors
    Y.Xu, T.Minari, K.Tsukagoshi, J.Chroboczek, F.Balestra, G.Ghibaudo
    Solid-State Electronics 61 (1) 106-110 (2011). [LINK]
  12. Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
    S.-L.Li, H.Miyazaki, H.Hiura, C.Liu, K.Tsukagoshi
    ACS nano 5 (1) 500-506 (2011). [LINK]
  13. Organic Single Crystals Directly Grown on Polymer Dielectric via Solution Process and Field Effect Transistors with Band-like Transport
    C.Liu, T.Minari, X.Lu, A.Kumatani, K.Takimiya, K.Tsukagoshi
    Advanced Materials 23 (4) 523-526 (2011). [LINK]
  14. Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors
    Yong Xu, R.Gwoziecki, R.Coppard, M.Benwadih, T.Minari , K.Tsukagoshi, J.A.Chroboczek, F.Balestra, G.Ghibaudo
    Applied Physics Letters 98 (3) 033505/1-3 (2011). [LINK]
  15. Volatile/Nonvolatile Dual-Functional Atom Transistor
    T.Hasegawa, Y.Itoh, H.Tanaka, T.Hino, T.Tsuruoka, K.Terabe, H.Miyazaki, K.Tsukagoshi, T.Ogawa, S.Yamaguchi, M.Aono
    Applied Physics Express 4 (1) 015204/1-3 (2011). [LINK]
  16. Unipolar resistive switching in high-resistivity Pr0.7Ca0.3MnO3 junctions
    S.-L.Li, J.Li, Y.Zhang, D.N.Zheng, K.Tsukagoshi
    Applied Physics A: Materials Science and Processing 103 (1) 21-26 (2011). [LINK]

B: 邦文解説

  1. 溶液から高移動度有機結晶トランジスタ
    塚越一仁、劉川、三成剛生
    OPTRONIS 特集"次世代ディスプレイを実現するフレキシブル有機エレクトロニクス" 353 (5) 83-87 (2011).
  2. 新たな世界を作り出した物質"グラフェン" - 流れを引き寄せた洞察力 -
    塚越一仁、 若林克法
    岩波「科学」 81 (1) 23-26 (2011).

C: 本/ハンドブック

  1. Self-organized organic semiconductors: From Materials to Device Applications
    Chapter 9 "Selective molecular assembly for bottom-up fabrication of organic thin-film transistors"
    Takeo Minari, Masataka Kano, Kazuhito Tsukagoshi,
    Editted by Prof.Li Quan, John Wiley & Sons, Inc., 2011 (ISBN 978-0-470-55973-4).
  2. Graphene and its Fascinating Attributes
    Chapter 11 " Gate-Voltage Modulation in Graphene"
    K.Tsukagoshi, H.Miyazaki, S.-L.Li, A. Kumatani, H. Hiura, A.Kanda,
    Editted by S.T.Pati, T.Enoki, C.N.R.Rao, World Scientific Pub Co Inc, 2011 (ISBN 978-981-4329-35-4).
  3. カーボンナノチューブ・グラフェンハンドブック
    担当 12章 グラフェンと薄層(薄膜)グラファイト、12-1節 作製方法, 「剥離グラフェンの作り方と判定方法」
    塚越一仁, 宮崎久生, 日浦英文, 黎 松林
    監修 飯島澄男、遠藤守信、コロナ社, 2011年9月 (ISBN: 978-4-339-06621-0).
  4. ナノカーボンの応用と実用化 −フラーレン、ナノチューブ、グラフェンを中心に−
    担当 第4章3節 電子デバイス "SiC上グラフェンでの電界効果素子の試作と評価"
    塚越一仁, 宮崎久生, 小高隼介
    監修 篠原久典、シーエムシー出版 2011年7月(ISBN: 978-4-7813-0361-1).
  5. ナノカーボンの応用と実用化 −フラーレン、ナノチューブ、グラフェンを中心に−
    担当 第4章 グラフェン "絶縁体上へのグラフェンの直接形成"
    日浦英文、マイケル リー、塚越一仁
    監修 篠原久典、シーエムシー出版 2011年7月(ISBN: 978-4-7813-0361-1).
  6. 炭素学
    担当 応用編13-6-5「磁気特性」
    神田晶申、塚越一仁
    編集 田中一義、 東原秀和、篠原久典、化学同人 2011年10月15日 (ISBN-13: 978-4759814118).

ページトップへ

2010

A: International journals

  1. Influence of disorder on conductance in bilayer graphene under perpendicular electric field
    H.Miyazaki, K.Tsukagoshi, A.Kanda, M.Otani, S.Okada
    Nano Letters 10 (10) 3888-3892 (2010). [LINK]
  2. Toward sub-20-nm hybrid nanofabrication by combining molecular ruler method and electron beam lithography
    C.Li, T.Hasegawa, H.Tanaka, H.Miyazaki, S.Odaka, K.Tsukagoshi, M.Aono
    Nanotechnology 21 (49) 495304/1-4 (2010). [LINK]
  3. Pulsed Bias Stress in Pentacene Thin Film Transistors and Effect of Contact Material
    T.Miyadera, T.Minari, S.D.Wang, K.Tsukagoshi
    Japanese Journal of Applied Physics 49 (1) 01AM03/1-3 (2010). [LINK]
  4. Resistance modulation of graphite/graphene film controlled by gate electric field
    H.Miyazaki, S.Li, A.Kanda, K.Tsukagoshi
    Semiconductor Science and Technology 25 (3) 034008/1-8 (2010). [LINK]
  5. Anisotropic transport in epitaxial graphene on SiC substrate with periodic nanofacets
    S.Odaka, H.Miyazaki, S.-L. Li, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
    Applied Physics Letters 96 (6) 062111/1-3 (2010). [LINK]
  6. Transition Voltage Method for Estimating Contact Resistance in Organic Thin Film Transistors
    Sui-Dong Wang, Yan Yan, Kazuhito Tsukagoshi
    IEEE Electron Device Letters 31 (5) 509-511 (2010). [LINK]
  7. All-solution-processed selective assembly of flexible organic field-effect transistor arrays
    M.Kano, T.Minari, K.Tsukagoshi
    Applied Physics Express 3 (5) 051601/1-3 (2010). [LINK]
  8. Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
    Yong Xu, T.Minari, K.Tsukagoshi, J.A.Chroboczek, G.Ghibaudo
    Journal of Applied Physics 107 (11) 114507/1-7 (2010). [LINK]
  9. Low operating bias and matched input-output characteristics in graphene inverters
    S.-L.Li, H.Miyazaki, A.Kumatani, A.Kanda, K.Tsukagoshi,
    Nano Letters 10 (7) 2357-2362 (2010). [LINK]
  10. Extraction oflow-frequency noise in contact resistance of organic field-effect transistors
    Yong Xu, T.Minari, K.Tsukagoshi, R.Gwoziecki, R.Coppard, F.Balestra, J.A.Chroboczek, G.Ghibaudo
    Applied Physics Letters 97 (3) 033503/1-3 (2010). [LINK]
  11. Understanding contact behavior in organic thin film transistors
    Sui-Dong Wang, Yan Yan, Kazuhito Tsukagoshi
    Applied Physics Letters 97 (6) 063307/1-3 (2010). [LINK]
  12. Determination of the Number of Graphene Layers: DiscreteDistribution of the Secondary Electron Intensity Stemming from Individual Graphene Layers
    H.Hiura, H.Miyazaki, K.Tsukagoshi
    Applied Physics Express 3 (9) 095101/1-3 (2010). [LINK]
  13. Influence of Electrode Size on Resistance Switching Effect in Nanogap Junctions
    H.Suga, M.Horikawa, S.Odaka, H.Miyazaki, K.Tsukagoshi, T.Shimizu, Y.Naitoh
    Applied Physics Letters 97 (7) 093118/1-3 (2010). [LINK]
  14. Dependence of proximity-induced supercurrent on junction length in multilayer-graphene Josephson junctions
    A.Kanda, T.Sato, H.Goto, H.Tomori, S.Takana, Y.Ootuka, K.Tsukagoshi
    Physica C: Superconductivity and Applications 470 (20) 1477-1480 (2010). [LINK]
  15. Fabrication of ultrashort graphene Josephson junctions
    H.Tomori, A.Kanda, H.Goto, S.Takana, Y.Ootuka, K.Tsukagoshi
    Physica C: Superconductivity and Applications 470 (20) 1492-1495 (2010). [LINK]
  16. Site-selective deposition of single-wall carbon nanotubes by patterning self-assembled monolayer for application to thin-film transistors
    S.Fujii, T.Tanaka, H.Suga, Y.Naitoh, T.Minari, K.Tsukagoshi, H.Kataura
    Physica Status Solidi (B) 247 (11-12) 2750-2753 (2010). [LINK]
  17. Inverse Spin Valve Effect in Multi layer Graphene Device
    H.Goto, S.Tanaka, H.Tomori, Y.Ootuka, K.Tsukagoshi, A.Kanda
    Journal of Physics Conference Series 232, 2012002/1-5 (2010). [LINK]
  18. Effect of current annealing on electronic properties of multilayer graphene
    S.Tanaka, H.Goto, H.Tomori, Y.Ootuka, K.Tsukagoshi, A.Kanda
    Journal of Physics Conference Series 232, 012015/1-4 (2010). [LINK]

B: 邦文解説

  1. 有機/金属電荷移動現象とデバイス応用
    三成剛生, 熊谷明哉, 塚越一仁
    応用物理学会 有機分子・バイオエレクトロニクス分科会誌, Vol.21 (1) 21〜26 (2010).
  2. グラフェン素子の作り方とゲート電界による伝導変調 (小特集「グラフェンの視点から見た炭素材料」)
    塚越一仁, 宮崎久生
    炭素 243号 (6) 110-115 (2010).
  3. 2層グラフェン電気伝導の強電界効果
    塚越一仁,宮崎久生, 神田晶申
    固体物理 45 (11) 93-102(2010).
  4. グラフェンの電気伝導の現状と可能性
    神田晶申、田中翔、後藤秀徳、友利ひかり、塚越一仁
    Journal of the Vacuum Society of Japan (真空) 53 (2) 85-93 (2010).

C: 本/ハンドブック

ページトップへ

2009

A: International journals

  1. Contact resistance instability in pentacene thin film transistors induced by ambient gases
    S.D.Wang, T.Minari, T.Miyadera, K.Tsukagoshi, J.Tang
    Applied Physics Letters 94 (8) 083309/1-3 (2009). [LINK]
  2. Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
    T.Minari, M.Kano, T.Miyadera, S.D.Wang, Y.Aoyagi, K.Tsukagoshi
    Applied Physics Letters 94 (9) 093307/1-3 (2009). [LINK]
  3. Improvement of subthreshold current transport by contact interface modification in organic field-effect transistors
    M.Kano, T.Minari, K.Tsukagoshi
    Applied Physics Letters 94 (14) 143304/1-3 (2009). [LINK]
  4. Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes
    T.Tanaka, H.Jin, Y.Miyata, S.Fujii, H.Suga, Y.Naitoh, T.Minari, T.Miyadera, K.Tsukagoshi, H.Kataura
    Nano Letter 9 (4) 1497-1500 (2009). [LINK]
  5. Performance enhancement of thin-film transistors by using high-purity semiconducting single-wall carbon nanotubes
    S.Fujii, T.Tanaka, Y.Miyata, H.Suga, Y.Naitoh, T.Minari, T.Miyadera, K.Tsukagoshi, H.Kataura
    Applied Physics Express 2 (7) 071601/1-3 (2009). [LINK]
  6. Charge Transport Properties of Hexabenzocoronene Nanotubes by Field Effect: Influence of the Oligoether Side Chains on the Mobility
    Y.Yamamoto, W.Jin, T.Fukushima, T.Minari, K.Tsukagoshi, A.Saeki, S.Seki, S.Tagawa, T.Aida
    Chemistry Letters 38 (9) 888-889 (2009). [LINK]
  7. Field-induced carrier delocalization in the strain-induced Mottinsulating state of an organic superconductor
    Y.Kawasugi, H.M.Yamamoto, N.Tajima, T.Fukunaga, K.Tsukagoshi, R.Kato
    Physical Review Letters 103 (11) 116801/1-4 (2009). [LINK]
  8. Ambipolar-transporting coaxial nanotubes with a tailored molecular graphenefullerene heterojunction
    Y.Yamamoto, G.Zhang, W.Jin, T.Fukushima, N.Ishii, A.Saeki, S.Seki, S.Tagawa, T.Minari, K.Tsukagoshi, T.Aida
    PNAS (Proceedings of the National Academy of Sciences of the United States of America) 106 (50) 21051-21056 (2009). [LINK]
  9. Thin-film transistors fabricated from semiconductor-enriched single-wall carbon nanotubes
    S.Fujii, T.Tanaka, Y.Miyata, H.Suga, Y.Naitoh, T.Minari, T.Miyadera, K.Tsukagoshi, H.Kataura
    Physica Status Solidi (B) 246 (11) 2849-2852 (2009). [LINK]
  10. Study of Organic Material FETs by Combined Static and Noise Measurements
    Y.Xu, T.Minari, K.Tsukagoshi, K.Bock, M.Fadlallah, G.Ghibaudo, J.A.Chroboczek
    AIP Conference Proceedings (Noise and Fluctuations) 1129, 163-166 (2009). [LINK]
  11. Field effect on organic charge-ordered/Mott insulators
    HM.Yamamoto, M.Hosoda, Y.Kawasugi, K.Tsukagoshi, R.Kato
    Physica B: Condensed matter 404 (3-4) 413-415 (2009). [LINK]

B: 邦文解説

  1. 表面選択塗布法による選択的有機結晶成長とデバイス応用
    三成剛生、塚越一仁,
    日本結晶成長学会誌, Vol.35, No.4, 33-39 (2009).
  2. 簡単な?グラフェンの作り方
    日浦英文, 宮崎久生, 神田晶申, 塚越一仁,
    応用物理学会 薄膜・表面物理分科会News Letter No.136, 19-24 (2009).
  3. 劈開法で得た単層・多層グラフェンの電子・スピン・クーパー対伝導
    神田晶申, 後藤秀徳, 塚越一仁
    応用物理学会応用電子物性分科会誌、第15巻 第3号114-119 (2009).

C: 本/ハンドブック

  1. 低分子有機半導体の高性能化
    担当:第2節「有機トランジスタの端子抵抗評価法と特性」, p20-28 
    塚越一仁
    監修 小野昇, サイエンス&テクノロジー、2009年5月28日出版(ISBN978-4-903413-66-2 C3058)
  2. グラフェンの機能と応用展望
    担当:グラフェンの物性,評価,第5章「グラフェンの作製,膜厚の評価,観察」p79-89,
    宮崎久生, 日浦英文, 塚越一仁
    監修 徳本洋志, 斉木幸一朗, シーエムシー出版 2009年7月31日 (ISBN978-4-7813-0146-4)

ページトップへ

2008

A: International journals

  1. Coulomb blockade oscillations in narrow corrugated graphite ribbons
    H.Miyazaki, K.Tsukagoshi, S.Odaka, Y.Aoyagi, T.Moriki, T.Sato, A.Kanda, Y.Ootuka,
    Applied Physics Express 1 (2) 024001/1-3 (2008). [LINK]
  2. Bias stress instability in pentacene thin film transistors: contact resistance change and channel threshold voltage shift
    S.D.Wang, T.Minari, T.Miyadera, Y.Aoyagi, K.Tsukagoshi
    Applied Physics Letters 92 (6) 063305/1-3 (2008). [LINK]
  3. Inter-Layer Screening Length to Electric Field in Thin Graphite Film
    H.Miyazaki, K.Tsukagoshi, S.Odaka, Y.Aoyagi, T.Sato, S.Tanaka, H.Goto, A.Kanda, Y.Ootuka,
    Applied Physics Express 1 (3) 034007/1-3 (2008). [LINK]
  4. Selective organization of solution-processed organic field-effect transistors
    T.Minari, M.Kano, T.Miyadera, S.D.Wang, Y.Aoyagi, M.Seto, T.Nemoto, S.Isoda, K.Tsukagoshi,
    Applied Physics Letters 92 (17) 173301/1-3 (2008). [LINK]
  5. Gate control of spin transport in multilayer graphene
    H.Goto, A.Kanda, T.Sato, S.Tanaka, Y.Ootuka, S.Odaka, H.Miyazaki, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 92 (21) 212110/1-3 (2008). [LINK]
  6. Strain-induced superconductor/insulator transition in a thin organic single crystal field effect channel
    Y.Kawasugi, H.Yamamoto, M.Hosoda, N.Tajima, T.Fukunaga, K.Tsukagoshi, R.Kato,
    Applied Physics Letters 92 (24) 243508/1-3 (2008). [LINK]
  7. Charge trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment
    T.Miyadera, S.D.Wang, T.Minari, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 93 (3) 033304/1-3 (2008). [LINK]
  8. Correlation between grain size and device parameters in pentacene thin film transistors
    S.D.Wang, T.Miyadera, T.Minari, Y.Aoyagi, K.Tsukagoshi,
    Applied Physics Letters 93 (4) 043311/1-3 (2008). [LINK]
  9. Direct Observation of the Electronic States of Single Crystalline Rubrene in the ambient condition by Photoelectron Yield Spectroscopy
    Y.Nakayama, T.Minari, K.Tsukagishi, Y.Noguchi, H.Ishii,
    Applied Physics Letters 93 (17) 173305/1-3 (2008). [LINK]
  10. Dynamic bias stress current instability caused by charge trapping and detrapping in pentacene thin film transistors
    T.Miyadera, T.Minari, S.D.Wang, K.Tsukagoshi,
    Applied Physics Letters 93 (21) 213302/1-3 (2008). [LINK]
  11. Conduction properties of micro-crystals of 2,5-dimethyl-N,N '-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO2/Si substrates
    HM.Yamamoto, M.Hiroshi, Y.Kawasugi, H.Ito, T.Fukunaga, T.Suzuki, K.Tsukagoshi, R.Kato,
    Solid State Sciences 10 (12) 1757-1761 (2008). [LINK]
  12. Coulomb blockade oscillations in patterned ultra-thin graphite films
    S.Odaka, H.Miyazaki, T.Moriki, T.Sato, A.Kanda, K.Tsukagoshi, Y.Ootuka, Y.Aoyagi
    Japanese Journal of Applied Physics 47 (1) 697-699 (2008). [LINK]
  13. A different type of reentrant behavior in superconductor/thin graphite film/superconductor Josephson junctions
    T.Sato, A.Kanda, T.Moriki, H.Goto, S.Tanaka, Y.Ootuka, H.Miyazaki, S.Odaka, K.Tsukagoshi, Y.Aoyagi,
    Physica C: Superconductivity and its Applications 468, 797-800 (2008). [LINK]
  14. Observation of gate-controlled superconducting proximity effect in microfabricated thin graphite films
    T.Sato, A.Kanda, S.Tanaka, H.Goto, Y.Ootuka, H.Miyazaki, S.Odaka, K.Tsukagoshi, Y.Aoyagi,
    Journal of Physics 109 (1) 012031/1-4 (2008). [LINK]
  15. Gate-controlled superconducting proximity effect in ultrathin graphite films
    T.Sato, T.Moriki, S.Tanaka, A.Kanda, H.Miyazaki, S.Odaka, Y.Ootuka, K.Tsukagoshi, Y.Aoyagi
    Physica E: Low-dimensional Systems and Nanostructures 40 (5) 1495-1497 (2008). [LINK]

B: 邦文解説

  1. ナノチューブ電極を用いたナノギャップ有機トランジスタ
    塚越一仁
    Journal of the Vacuum Society of Japan (真空), Vol.51, No.7, 423-427 (2008).
  2. グラファイト超薄膜の超伝導近接効果
    神田晶申、塚越一仁
    表面科学、第29巻、第5号、315-320 (2008).

C: 本/ハンドブック

  1. 有機トランジスタ材料の評価と応用Ⅱ
    担当:「トップコンタクト短チャネル有機薄膜トランジスタ」 p106-127,
    塚越一仁,
    監修 森健彦、長谷川達生、シーエムシー出版, 2008年7月31日出版(ISBN978-4-7813-0026-9 C3054).

ページトップへ

2007

A: International journals

  1. In-crystal and surface charge transport of electric-field induced carriers in organic single-crystal semiconductors
    J.Takeya, R.Hirahara, M.Yamagishi, Y.Nakazawa, K.Yamada, J.Kato, K.Hara, S.Ikehata, K.Tsukagoshi, Y.Aoyagi, T.Takenobu, Y.Iwasa,
    Physical Review Letters 98 (19) 196804/1-4 (2007). [LINK]
  2. Suppression of current hysteresis in carbon nanotube thin film transistor
    K.Tsukagoshi, M.Sekiguchi, Y.Aoyagi, T.Kanbara, T.Takenobu, Y.Iwasa,
    Japanese Journal of Applied Physics 46 (23), L571-L573 (2007). [LINK]
  3. Charge injection process in organic field-effect transistors
    T.Minari, T.Miyadera, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 91 (5) 053508/1-3 (2007). [LINK]
  4. Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique
    F.Fujimori, K.Shigeto, T.Hamano, T.Minari, T.Miyadera, K.Tukagoshi, Y.Aoyagi,
    Applied Physics Letters 90 (19) 193507/1-3 (2007). [LINK]
  5. Defect-free two-dimensional-photonic crystal structures on a nonlinear optical polymer patterned by nanoimprint lithography
    M.Okinaka, S.Inoue, K.Tsukagoshi, Y.Aoyagi,
    Journal of Vacuum Science and Technology B 25 (3) 899-901 (2007). [LINK]
  6. Precise patterning of SiO2-based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using polysilane as a precursor
    M.Okinaka, K.Yanagisawa, K.Tsukagoshi, Y.Aoyagi,
    Journal of Vacuum Science and Technology B 25 (4) 1393-1397 (2007). [LINK]
  7. Scaling effect on the operation stability of short-channel organic single-crystal transistors
    T.Minari, T.Miyadera, K.Tsukagoshi, Y.Aoyagi, T.Hamano, R.Yasuda, K.Nomoto, T.Nemoto, S.Isoda,
    Applied Physics Letters 91 (6) 063506/1-3 (2007). [LINK]
  8. Frequency response analysis of pentacene thin-film transistors with low impedance contact by interface molecular doping
    T.Miyadera, T.Minari, K.Tsukagoshi, H.Ito, Y.Aoyagi
    Applied Physics Letters 91 (1) 013512/1-3 (2007). [LINK]
  9. Molecular-packing-enhanced charge transport in organic field-effect transistors based on semiconducting porphyrin crystals
    T.Minari, M.Seto, T.Nemoto, S.Isoda, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 91 (12) 123501/1-3 (2007). [LINK]
  10. Suppression of short channel effect in organic thin film transistors
    K.Tsukagoshi, F.Fujimori, T.Minari, T.Miyadera, T.Hamano, Y.Aoyagi,
    Applied Physics Letters 91 (10) 113508/1-3 (2007). [LINK]
  11. Contact-metal dependent current injection in pentacene thin film transistors
    S.D.Wang, T.Minari, T.Miyadera, K.Tsukagoshi, Y.Aoyagi
    Applied Physics Letters 91 (20) 203508/1-3 (2007). [LINK]
  12. Electron transport in thin graphite films: Influence of microfabrication processes
    T.Moriki, T.Sato, A.Kanda, Y.Ootuka, H.Miyazaki, S.Odaka, K.Tsukagoshi, Y.Aoyagi,
    Physica E: Low-dimensional Systems and Nanostructures 40 (2) 241-244 (2007). [LINK]

C: 本/ハンドブック

  1. ナノチューブハンドブック
    担当:3.3.2.14 「機能と応用:ナノチューブ電極と応用」p398-402,
    塚越一仁
    監修 遠藤守信、飯島純男、エヌ・ティー・エス、2007年7月17日発行、(978-4-86043-176-1 C3040).

ページトップへ

2006

A: International journals

  1. High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte
    J.Takeya, K.Yamada, K.Hara, K.Shigeto, K.Tsukagoshi, S.Ikehata, Y.Aoyagi,
    Applied Physics Letters 88(11) 112102/1-3 (2006). [LINK]
  2. Direct Formation of micro-/nano-crystalline 2,5-dimethyl-N,N-dicyanoquinonediimine complexes on SiO2/Si substrates and multi-probe measurement of conduction properties
    H.M.Yamamoto, H.Ito, K.Shigeto, K.Tsukagoshi, R.Kato,
    Journal of the American Chemical Society 128 (3) 700-701 (2006). [LINK]
  3. Direct nanoimprint for inorganic glass patterning
    M.Okinaka, K.Tsukagoshi, Y.Aoyagi,
    Journal of Vaccume Science and Technology B 24 (3) 1402-1404 (2006). [LINK]
  4. Two-dimensional near-field optical spectroscopy in magnetic fields up to 4T
    K.Tanaka, K.Tsukagoshi, Y.Aoyagi, S.Kuroda, K.Takita,
    Optical Review 13 (4) 276-278 (2006). [LINK]
  5. Charge transport of copper phthalocyanine single-crystal field-effect transistors stable above 100 ℃
    K.Yamada, J.Takeya, K.Shigeto, K.Tsukagoshi, Y.Aoyagi, Y.Iwasa,
    Applied Physics Letters 88 (12) 122110/1-3 (2006). [LINK]
  6. Interface modification of a pentacene field-effect transistor with a submicron channel
    K.Tsukagoshi, K.Shigeto, I.Yagi, Y.Aoyagi,
    Applied Physics Letters 89 (11) 113507/1-3 (2006). [LINK]
  7. Nano-Size Molecular Conductors on Silicon Substrate Toward Device Integration of Conductive CT Salts
    H.M.Yamamoto, H.Ito, K.Shigeto, I.Yagi, K.Tsukagoshi,R.Kato,
    Journal of Low Temperature Physics 142 (3-4) 215-220 (2006). [LINK]
  8. Organic light-emitting diode driven by organic thin film transistor formed in three-dimensional configuration on plastic substrate
    K.Tsukagoshi, J.Tanabe, I.Yagi, K.Shigeto, K.Yamagisawa, Y.Aoyagi,
    Journal of Applied Physics 99 (6) 064506/1 (2006). [LINK]
  9. Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments
    T.Kanbara, T.Takenobu, T.Takahashi, K.Tsukagoshi, Y.Aoyagi, H.Kataura, Y.Iwasa,
    Applied Physics Letters 88 (5) 053118/1-3 (2006). [LINK]
  10. Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure
    M.Okinaka, S.Inoue, K.Tsukagoshi, Y.Aoyagi,
    Journal of Vaccume Science and Technology B 24 (1) 271-273 (2006). [LINK]
  11. Gate capacitance in electrochemical transistor of single-walled carbon nanotube
    H.Shimotani, T.Kanbara, Y.Iwasa, K.Tsukagoshi, Y.Aoyagi, H.Kataura,
    Applied Physics Letters 88 (7) 073104/1-3 (2006). [LINK]
  12. Nano-scale interface controls for future plastic transistors
    K.Tsukagoshi, I.Yagi, Y.Aoyagi
    Science and Technology of Advanced Materials 7 (3) 231-236 (2006). [LINK]
  13. High-performance transparent flexible transistors using carbon nanotube films
    T.Takenobu, T.Takahashi, T.Kanbara, K.Tsukagoshi, Y.Aoyagi, Y.Iwasa,
    Applied Physics Letters 88 (3) 033511/1-3 (2006). [LINK]
  14. Quasi-periodic Coulomb blockade oscillations in a single-wall carbon nanotube bundle
    K.Tsukagoshi, S.Uryu, Y.Aoyagi,
    Solid State Phenomena 121-123, 537-540 (2006). [LINK]
  15. Magnetic Response of a Mesoscopic Superconducting Disk Surrounded by a Normal Metal
    H.Goto, K.Tsukagoshi, K.Kono
    AIP Conference Proceedings 850, 753-754 (2006). [LINK]
  16. Single-electron transistor made from a single gold colloidal particle
    M.Kawamura, K.Tsukagoshi, K.Kono
    AIP Conference Proceedings 850, 1438-1439 (2006). [LINK]
  17. Reproducible formation of nano-scale gap electrodes for single molecule measurements by combination of FIB deposition and tunnelling current detection
    K.Shigeto, M.Kawamura, A.Yu.Kasumov, K.Tsukagoshi, K.Kono, Y.Aoyagi,
    Microelectronic Engineering 83, 1471-1473 (2006). [LINK]

B: 邦文解説

  1. ナノスケール物質電気伝導探索のためのナノギャップ電極作製と応用
    塚越一仁, 重藤訓志, A.Kasumov, 川村稔, 青柳克信
    応用物理 第75巻3号 332-337 (2006).
  2. トップコンタクト短チャネル有機薄膜トランジスタ
    塚越一仁, 藤森文浩, 重藤訓志, 濱野哲子, 三成剛生, 宮寺哲彦, 青柳克信,
    電子情報通信学会技術研究報告 OME2006-112, 23−27 (2006).

ページトップへ

2005

A: International journals

  1. Proximity effect in a superconductor-metallofullerene-superconductor molecular junction
    A.Yu.Kasumov, K.Tsukagoshi, M.Kawamura, T.Kobayashi, Y.Aoyagi, K.Senba, T.Kodama, H.Nishikawa, I.Ikemoto, K.Kikuchi, V.T.Volkov, Yu.A.Kasumov, R.Deblock, S.Guron, H.Bouchiat,
    Physical Review B 72 (Rapid communications) (3) 033414/1-4 (2005). [LINK]
  2. Current distribution inside Py/Cu lateral spin-valve device
    J.Harmlre, T.Kimura, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Physical Review B 71 (9) 094402/1-10 (2005). [LINK]
  3. Ion Emitter based on Carbon Nanotubes in Liquid Helium
    K.Kawasaki, K.Tsukagoshi, K.Kono
    Low Temperature Physics 138 (3-4) 899-903 (2005). [LINK]
  4. Suppression of the unconventional metallic behavior by gate voltage in MWNT device
    T.Kanbara, K.Tsukagoshi, Y.Aoyagi, Y.Iwasa,
    Physica E: Low-dimensional Systems and Nanostructures 29 (3-4) 698-701 (2005). [LINK]
  5. Modification of the electric conduction at the pentacne/SiO2 interface by surface termination of2
    I.Yagi, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 86 (10) 103502/1-3 (2005). [LINK]
  6. Polarization Measurements in Tip-Enhanced Raman Spectroscopy Applied to Single-Walled Carbon Nanotubes
    Y.Saito, N.Hayazawa, H.Kataura, T.Murakami, K.Tsukagoshi, Y.Inouye, S.Kawata,
    Chemical Physics Letters 410 (1-3) 136-141 (2005). [LINK]
  7. Alignment-Free Top-Contact Formation for Organic Thin Film
    I.Yagi, K.Shigeto, K.Tsukagoshi, Y.Aoyagi,
    Japanese Journal of Applied Physics (Express Letter) 44 (16) L479-L481 (2005). [LINK]
  8. Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices
    T.Takenobu, T.Kanbara, N.Akima, T.Takahashi, M.Shiraishi, K.Tsukagoshi, H.Kataura, Y.Aoyagi, Y.Iwasa,
    Advanced Materials 17 (20) 2430-2434 (2005). [LINK]
  9. Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film
    K.Tsukagoshi, I.Yagi, K.Shigeto, K.Yamagisawa, J.Tanabe, Y.Aoyagi,
    Applied Physics Letters 87 (18) 183502/1-3 (2005). [LINK]
  10. Hall effect of quasi-hole gas in organic single-crystal transistors
    Jun Takeya, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa,
    Japanese Journal of Applied Physics 44 (Express Letter) (46) L1393-L1396 (2005). [LINK]
  11. Effect of probe configuration on spin asccumulation in lateral spin valve structure
    T.Kimura, J.Harmelre, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Journal of Magnetism and Magnetic Materials 286, 88-90 (2005). [LINK]
  12. Formation mechanism of carbon nanotubes in the gas-phase synthesis from colloidal solutions of nanoparticles
    H.Ago, S.Ohshima, K.Tsukagoshi, M.Tsuji, M.Yumura,
    Current Applied Physics 5 (2) 128-132 (2005). [LINK]

B: 邦文解説

  1. 電界効果有機薄膜素子の端子接合および界面に関して
    塚越一仁, 青柳克信
    物理学会誌 vol.60 (3) 187-194 (2005).
  2. ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用
    塚越一仁, 重藤訓志, A.Kasumov, 川村稔, 青柳克信, 小林知洋, 仙波健吾, 兒玉健, 西川浩之, 池本勲, 菊地耕一, V.T.Volkov, Yu.A.Kasumov, R.Deblock, S.Guron, H.Bouchiat,
    日本顕微鏡学会誌「顕微鏡」Vol.40, (2) 96-99 (2005).

C: 本/ハンドブック

  1. Mesoscopic Tunneling Devices,.
    担当「Single-electron logic based on multiple-tunnel junctions」S.Amakawa, K.Tsukagoshi, K.Nakazato, H.Mizuta, B.W.Alphenaar, Edited by H.Nakashima,Fort PO, Trivandrum, Kerala, India (2004)(ISBN: 81-271-0007-2).

ページトップへ

2004

A: International journals

  1. Pentacene nanotransistor with carbon nanotube electrodes
    K.Tsukagoshi, I.Yagi, Y.Aoyagi,
    Applied Physics Letters 85 (6) 1021-1023 (2004). [LINK]
  2. Gate-voltage dependence of the Zero-bias anomalies in multi-walled carbon nanotubes
    A.Kanda, K.Tsukagoshi, Y.Ootuka, Y.Aoyagi,
    Physical Review Letters 92 (3) 036801/1-4 (2004). [LINK]
  3. Multiple layers conduction and scattering property in multi-walled carbon nanotubes
    K.Tsukagoshi, E.Watanabe, I.Yagi, N.Yoneya, Y.Aoyagi,
    New Journal of Physics 6 (3) 1-13 (2004). [LINK]
  4. The formation of nanometer-scale gaps by electrical degradation and their application to C60 transport measurements
    K.Tsukagoshi, E.Watanabe, I.Yagi, Y.Aoyagi,
    Microelectronic Engineering 73-74, 686-688 (2004). [LINK]
  5. Carbon nanotubes with a nanogap for nanoscale organic devices
    I.Yagi, K.Tsukagoshi, E.Watanabe, Y.Aoyagi,
    Microelectronic Engineering 73-74, 675-678 (2004). [LINK]
  6. Fabrication of Coulomb blockade device by controlling 0.34 nm space in multiwalled carbon nanotube
    E.Watanabe, K.Tsukagoshi, I.Yagi, Y.Aoyagi,
    Microelectronic Engineering 73-74, 666-669 (2004). [LINK]
  7. Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers
    I.Yagi, K.Tsukagoshi, Y.Aoyagi,
    Thin Solid Films 467 (1-2) 168-171 (2004). [LINK]
  8. Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method
    I.Yagi, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 84 (5) 813-815 (2004). [LINK]
  9. Purification of Single Wall Carbon Nanotubes synthesized by the Catalytic Chemical Vapor Deposition of alcohol
    S.Okubo, T.Sekine, S.Suzuki, Y.Achiba, K.Tsukagoshi, Y.Aoyagi, H.Kataura,
    Japanese Journal of Applied Physics 43 (3B) L396-L398 (2004). [LINK]
  10. Spin-dependent boundary resistance in the lateral spin valve structure
    T.Kimura, J.Harmelre, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 85 (16) 3501-3503 (2004). [LINK]
  11. Suppression of spin accumulation in non-magnet due to ferromagnetic ohmic contact
    T.Kimura, J.Harmelre, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 85 (17) 3795-3796 (2004). [LINK]
  12. Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration
    T.Kimura, J.Hamrle, Y.Otani, K.Tsukagoshi, Y.Aoyagi
    Applied Physics Letters 85 (22) 5382-5384 (2004). [LINK]
  13. Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes
    T.Kanbara, T.Iwasa, K.Tsukagoshi, Y.Aoyagi, Y.Iwasa,
    Applied Physics Letters 85 (26) 6404-6406 (2004). [LINK]
  14. Superconductivity in Long and Short Molecules
    A.Yu.Kasumov, K.Tsukagoshi, M.Kawamura, T.Kobayashi, Y.Aoyagi, K.Senba, T.Kodama, H.Nishikawa, I.Ikemoto, K.Kikuchi, V.T.Volkov, Yu.A.Kasumov, R.Deblock, S.Guron, H.Bouchiat,
    AIP Confarene Proceedings 723 (1) 103-106 (2004). [LINK]
  15. Non-local Hall resisitance measured in submicron-scale nonmagnetic/ferromagnetic junctions
    T.Kimura, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Journal of Magnetic and Magnetic Materials 272-276, E1333-E1334 (2004). [LINK]
  16. Domain wall drag due to dc current injection into feromagnetic nano-wires
    T.Kimura, Y.Otani, I.Yagi, K.Tsukagoshi, Y.Aoyagi,
    Journal of Magnetic and Magnetic Materials 272-276, E1347-E1348 (2004). [LINK]

ページトップへ

2003

A: International journals

  1. High Density Current Operation in Nano-Graphite Fiber Synthesized by Chemical Vapor Deposition
    K.Tsukagoshi, At.Suzuki, I.Yagi, E.Watanabe, Y.Aoyagi, H.Ago, S.Ohshima, M.Yumura,
    Journal of Applied Physics 94, (5) 3516-3519 (2003). [LINK]
  2. Suppressed pinning field of trapped domain wall due to a dc current injection
    T.Kimura, Y.Otani, I.Yagi, K.Tsukagoshi, Y.Aoyagi
    Journal of Applied Physics 94 (10) 7266-7269 (2003). [LINK]
  3. Spin-current assisted domain-wall depinning in a submicron magnetic wire
    T.Kimura, Y.Otani, K.Tsukagoshi, Y.Aoyagi,
    Journal of Applied Physics 94 (12) 7947-7949 (2003). [LINK]
  4. Coulomb blockade oscillation in multiwalled carbon nanotube with internanotube tunnel junctions
    E.Watanabe, K.Tsukagoshi, D.Kanai, I.Yagi, Y.Aoyagi,
    Applied Physics Letters 83 (7) 1429-1431 (2003). [LINK]
  5. Temperature mediated switching of magnetoresistance in Co-contacted multiwall carbon nanotubes
    S.Chakraborty, K.Walsh, B.W.Alphenaar, L.Liu, K.Tsukagoshi,
    Applied Physics Letters 83 (5) 1008-1010 (2003). [LINK]
  6. Catalytic Growth of Carbon nanotubes and Their Patterning based on Ink-jet and Lithographic Techniques
    H.Ago, J.Qi, K.Tsukagoshi, K.Murata, S.Ohshima, Y.Aoyagi, M.Yumura,
    Journal of Electroanalytical Chemistry 559, 25-30 (2003) [LINK]
  7. One-dimensional System in Carbon Nanotubes
    H.Kataura, Y.Maniwa, T.Kodama, K.Kikuchi, S.Suzuki, Y.Achiba, K.Sugiura, S.Okubo, K.Tsukagoshi
    AIP Confarene Proceedings 685 (1) 349-353 (2003). [LINK]
  8. High-yield production of single-wall carbon nanotubes in nitrogen gas,
    D.Nishide, H.Kataura, S.Suzuki, K.Tsukagoshi, Y.Aoyagi, Y.Achiba,
    Chemical Physics Letters 372 (1-2) 45-50 (2003). [LINK]

B: 邦文解説

  1. 多層カーボンナノチューブの伝導特性の基礎,
    塚越一仁, 青柳克信,
    応用物理, 第72 (3) 333-337 (2003).
  2. 多層カーボンナノチューブの多彩な電気伝導
    神田申晶, 塚越一仁,
    パリティ, Vol.18 (8) 36-40, (2003).

C: 本/ハンドブック

  1. ナノテクノロジーハンドブック,
    担当:Ⅲ編ITへ使う,5章将来デバイス,5.4節 ``カーボンナノチューブ素子'' pp185-190,
    塚越一仁,
    オーム社 (2003).
  2. Electron transport in quantum dots
    担当:Chapter 11 "Carbon Nanotubes for Nanoscale Spin-Electronics" pp 434-456,
    Bruce Alphenaar, Swapan Chakrabory, Kazuhito Tsukagoshi
    Kluwer Academic/Plenum Publishers, New York (2003).

ページトップへ

2002

A: International journals

  1. Charge transfer control by gate voltage in crossed nanotube junction
    N.Yoneya, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 81 (12) 2250-2252 (2002). [LINK]
  2. Carbon nanotube devices for nanoelectronics
    K.Tsukagoshi, N.Yoneya, S.Uryu, Y.Aoyagi, A.Kanda, Y.Ootuka, B.W.Alphenaar
    Physica B: Condensed Matter 323 (1-4) 107-114 (2002). [LINK]
  3. Magnetic field dependence of Coulomb Oscillations in metal/multi-wall carbon nanotube/metal structure
    A.Kanda, K.Tsukagoshi, Y.Ootuka, Y.Aoyagi,
    Physica B: Condensed Matter 323 (1-4) 246-248 (2002). [LINK]
  4. Resistance dependence of transport properties in metal-multiwall carbon nanotube-metal structures
    A.Kanda, K.Tsukagoshi, S.Uryu, Y.Ootuka, Y.Aoyagi,
    Microelectronic Engineering 63 (1-3) 33-37 (2002). [LINK]

B: 邦文解説

  1. ナノエレクトロニクスのためのカーボンナノチューブ,
    塚越一仁,
    物性研究 79, (3) 420-430 (2002).

ページトップへ

2001

A: International journals

  1. Electron transport in metal/multiwall carbon nanotube/metal structures (metal=Ti or Pt/Au)
    A.Kanda, K.Tsukagoshi, Y.Ootuka, Y.Aoyagi,
    Applied Physics Letters 79 (9) 1354-1356 (2001). [LINK]
  2. Coulomb blockade in multi-walled carbon nanotube island with nanotube leads
    N.Yoneya, E.Watanabe, K.Tsukagoshi, Y.Aoyagi,
    Applied Physics Letters 79 (10) 1465-1467 (2001). [LINK]
  3. Spin Transport in Nanotubes
    B.W.Alphenaar, M.Wagner, K.Tsukagoshi,
    Journal of Applied Physics 89, (11) 6863-6867 (2001). [LINK]
  4. Magnetoresistance of ferromagnetically contacted carbon nanotubes
    B.W.Alphenaar, K.Tsukagoshi, M.Wagner,
    Physica E: Low-dimensional Systems and Nanostructures 10 (1-3) 499-504 (2001). [LINK]
  5. Spin injection in carbon nanotubes
    K.Tsukagoshi, B.W.Alphenaar, M.Wagner,
    Materials Science and Engineering B 84, (1-2), 26-30 (2001). [LINK]
  6. Nanoscale Coulomb blockade memory and logic devices
    H.Mizuta, H-O.Muller, K.Tsukagoshi, D.Williams, K.Nakazato, Z.Durrani, A.Irvine, S.Amakawa, G.Evans, H.Ahmed,
    Nanotechnology 12 (2) 155-159 (2001). [LINK]
  7. Observation of Coulomb Blockade in a Ti/Multi-wall Carbon Nanotube/Ti Structure
    A.Kanda, K.Tsukagoshi, Y.Ootuka, Y.Aoyagi,
    AIP Conference Proceedings 590, 265-268 (2001). [LINK]

B: 邦文解説

  1. カーボンエレクトロニクスの現状と未来, 
    塚越一仁, 村尾美緒,
    機能材料, 2001年5月号 (5) 65-69 (2001).
  2. カーボンナノチューブのデバイス応用の可能性,
    塚越一仁,
    BREAKTHROUGH, 4月号,16-20 (2001).

C: 本/ハンドブック

  1. カーボンナノチューブ -期待される材料開発-
    担当:カーボンエレクトロニクスの現状と未来,
    塚越一仁, 村尾美緒,
    シーエムシー出版 2001年11月10日出版 (ISBN4-88231-744-3).

ページトップへ

2000

A: International journals

  1. Scaling of single-electron tunneling current through ultra-small tunnel junctions
    S.Amakawa, K.Hoh, M.Fujishima, H.Mizuta, K.Tsukagoshi,
    Journal of Physics-Condensed Matter 12 (32) 7223-7228 (2000). [LINK]
  2. Spin Electronics using Carbon Nanotubes
    B.W.Alphenaar, K.Tsukagoshi, H.Ago,
    Physica E: Low-dimensional Systems and Nanostructures 6 (1-4) 848-851 (2000). [LINK]
  3. Spin-polarized transport in carbon nanotubes
    K.Tsukagoshi, B.W.Alphenaar,
    Superlattices and Microstructures 27 (5-6) 565-570 (2000). [LINK]
  4. Quantum-Dot Transport in Carbon nanotube
    T.Ida, K.Ishibashi, K.Tsukagoshi B.W.Alphenaar, Y.Aoyagi,
    Superlattices and Microstructures 27 (5-6) 551-554 (2000). [LINK]
  5. Quantum-Dot Transport in Carbon nanotube
    K.Ishibashi, T.Ida, M.Suzuki, K.Tsukagoshi, Y.Aoyagi,
    Japanese Jouranl of Applied Physics 39 (12B) 7053-7057 (2000). [LINK]

B: 邦文解説

  1. 炭素ナノチューブへのスピン注入, 
    塚越一仁, ブルース W. アルフェナール,
    パリティ, Vol.15 (6) 63-66, (2000).

ページトップへ

1999以前

A: International journals

  1. Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube
    K.Tsukagoshi, B.W.Alphenaar, H.Ago,
    Nature 401 (6753) 572-574 (1999). [LINK]
  2. Detection of Spin-flip Relaxation using Quantum Point Contacts
    B.W.Alphenaar, H.O.Mller, K.Tsukagoshi,
    Physical Review Letters 81 (25) 5628-5631 (1998). [LINK]
  3. Two-way switching based on turnstile operation
    K.Tsukagoshi, K.Nakazato,
    Applied Physics Letters 72 (9) 1084-1085 (1998). [LINK]
  4. Operation of Logic Function in Coulomb Blockade device
    K.Tsukagoshi, B.W.Alphenaar, K.Nakazato,
    Applied Physics Letters 73 (17) 2515-2517 (1998). [LINK]
  5. Commensurability Oscillations by Runaway and Pinned Electrons
    K.Tsukagoshi, T.Nagao, M.Haraguchi, S.Takaoka, K.Murase, K.Gamo,
    Superlattices and Microstructures 23 (2) 493-496 (1998). [LINK]
  6. Electron pump in multiple-tunnel junctions
    K.Tsukagoshi, K.Nakazato, H.Ahmed, K.Gamo,
    Physical Review B 56 (7) 3972-3975 (1997). [LINK]
  7. Electron Pump Current by Two Pulses with Phase Delay
    K.Tsukagoshi, K.Nakazato,
    Applied Physics Letters 71 (21) 3138-3140 (1997). [LINK]
  8. On the Mechanism of Commensurability Oscillations in Anisotropic Antidot Lattice
    K.Tsukagoshi, M.Haraguchi, S.Takaoka, K.Murase,
    Journal of the Physical Society of Japan 65 (3) 811-817 (1996). [LINK]
  9. Investigation of Hall resistivity in Antidot Lattices with respect to Commensurability Oscillations
    K.Tsukagoshi, T.Nagao, M.Haraguchi, S.Takaoka, K.Murase, K.Gamo,
    Journal of the Physical Socociety of Japan 65 (7) 1914-1916 (1996). [LINK]
  10. Mechanism of commensurability oscillations in anisotropic antidot lattice
    K.Tsukagoshi, S.Takaoka, K.Murase, K.Gamo,
    Physica B: Condensed Matter 227 (1-4) 141-143 (1996). [LINK]
  11. Current Direction Dependent Commensurate Oscillations in GaAs/AlGaAs Antidot Superlattice
    K.Tsukagoshi, M.Haraguchi, K.Oto, S.Takaoka, K.Murase, K.Gamo,
    Japanese Journal of Applied Physics 34 (8B) 4335-4337 (1995). [LINK]
  12. Magnetic electron focusing effect in GaAs/AlGaAs heterostructure with a gate-controlled byway channel
    S.G.Inoue, S.Takaoka, K.Tsukagoshi, K.Oto, S.Wakayama, K.Murase, K.Gamo,
    Japanese Journal of Applied Physics. 34 (8B) 4329-4331 (1995). [LINK]
  13. Magnetotransport through Disordered and Anisotropic Antidot Lattices in GaAs/AlGaAs Heterostructure
    K.Tsukagoshi, S.Wakayama, K.Oto, S.Takaoka, K.Murase, K.Gamo,
    Physical Review B 52 (11) 8344-8347 (1995). [LINK]
  14. Mechanism of apparent reflection of electrons from extra probes investigated by magnetic electron focusing effect
    S.Takaoka, S.Wakayama, S.G.Inoue, K.Tsukagoshi, K.Oto, K.Murase, K.Gamo,
    Physical Review B (Rapid communications) 50 (16) 11661-11665 (1994). [LINK]
  15. Angular distribution of emitted electrons from wire by magnetic electron focusing effect and low field magnetoresistance
    S.Wakayama, K.Tsukagoshi, K.Oto, S.Takaoka, K.Murase, K.Gamo,
    Solid State Communications 92 (5) 413-417 (1994). [LINK]
  16. Transport Properties in Artificial Lateral Superlattice
    K.Tsukagoshi, S.Wakayama, K.Oto, S.Takaoka, K.Murase, K.Gamo,
    Superlattices and Microstructures 16 (3) 295-301 (1994). [LINK]
  17. Investigation of ballistic elastic scattering length and specularity in multi-terminal GaAs-AlGaAs by magnetic electron focusing effect
    K.Tsukagoshi, S.Takaoka, K.Murase, K.Gamo, S.Namba,
    Applied Physics Letters 62 (14) 1609-1611 (1993). [LINK]
  18. Role of edge and bulk currents through a gate barrier in nonlocal resistance of GaAs/AlGaAs
    K.Tsukagoshi, K.Oto, S.Takaoka, K.Murase, Y.Takagaki, K.Gamo, S.Namba,
    Physical Review B 46 (8) 5016-5019 (1992). [LINK]
  19. Ballistic and Elastic Mean Free Paths Determined by Magnetic Electron Focusing Effect in GaAs/AlGaAs
    S.Takaoka, K.Tsukagoshi, S.Wakayama, K.Murase, K.Gamo, S.Namba,
    Solid State Communications 83, (10), 775-777 (1992). [LINK]
  20. Nonlocal quantum conduction and the influence of contact resistance in GaAs/AlGaAs Wires
    S.Takaoka, K.Tsukagoshi, K.Oto, T.Sawasaki, K.Murase, Y.Takagaki, K.Gamo, S.Namba,
    Surface Science 267 (1-3) 282-285 (1992). [LINK]
  21. Influence of Gate Voltage on Nonlocal Resistance in GaAs/AlGaAs Heterostructure at High Magnetic Fields
    S.Takaoka, K.Tsukagoshi, K.Oto, K.Murase, Y.Takagaki, K.Gamo, S.Namba,
    Physica B: Condensed Matter 184 (1-4) 21-25 (1992). [LINK]
  22. Influence of edge current and contact on nonlocal Shubnikov-de Haas oscillations in macroscopic GaAs/AlGaAs wire
    S.Takaoka, T.Sawasaki, K.Tsukagoshi, K.Oto, K.Murase, K.Gamo, S.Namba,
    Solid State Communications 80 (8) 571-574 (1991). [LINK]
  23. Nonlocal Shubnikov-de Haas oscillations through edge and bulk currents in GaAs/AlGaAs mesoscopic quantum wires
    K.Tsukagoshi, K.Oto, S.Takaoka, K.Murase, Y.Takagaki, K.Gamo, S.Namba,
    Solid State Communications 80 (10) 797-800 (1991). [LINK]
  24. A Search for multiplicity fluctuations in high energy nucleus-nucleus collisions
    HELIOS-Emulsion Collaboration (K.Kodama et al.),
    Physics Letters B 252 (2) 303-310 (1990). [LINK]
  25. An emulsion study of 16O and 32S interactions at 200 GeV per nucleon selected by transverse energy
    HELIOS-Emulsion Collaboration (K.Kodama et al.),
    Nuclear Physics B 342 (2) 279-301 (1990). [LINK]
  26. The production of charmed particles in high-energy 16O-emulsion central interactions
    HELIOS-Emulsion Collaboration (K.Kodama et al.),
    Physics Letters B 224 (4) 441-444 (1989). [LINK]

B: 邦文解説

  1. GaAs/AlGaAsアンチドット系における磁気抵抗,
    塚越一仁, 原口大, 鷹岡貞夫, 邑瀬和生, 蒲生健次,
    大阪大学極限物質研究センター報告書 6, (1995).
  2. 半導体2次元電子系における磁気電子フォーカス効果,
    塚越一仁, 鷹岡貞夫, 邑瀬和生,
    大阪大学低温センターだより (ISSN:0387-4419), 87, 1-4 (1994).
  3. 高移動度2次元電子系のバリスティック電気伝導における端子反射,
    音賢一, 塚越一仁, 井上真悟, 鷹岡貞夫, 邑瀬和生, 蒲生健次,
    大阪大学極限物質研究センター報告書 5, (1994).

C: 本/ハンドブック

  1. LOGIC OPERATION FOR ULTRA LOW POWER SEMICONDUCTOR DEVICE,
    K.Tsukagoshi, B.W.Alphenaar, K. Nakazato,
    Oxford Instruments Superconductiong Magnet Brochure (1998).

ページトップへ