TEM sample preparation apparatus
- EM-09100IS Slicer (JEOL)
Acc. voltage: 1 to 8 kV
Milling angle: ±6°(0.1°step)
Gas used: Argon - Precision Ion Polishing System Model 691 PIPS (Gatan)
Acc. voltage: 0.1 to 6 kV
Milling angle: ±10°
Gas used: Argon
Liquid Nitrogen (LN2) Cold Stage - Precision Ion Polishing System Model 695 PIPSⅡ (Gatan)
Acc. voltage: 0.1 to 8 kV
Cold Stage - Model 656 Dimple Grinder (Gatan)
Grinding wheel diameter: 15 mm
Grinding wheel load: 0~40 g
Grinding wheel speed: 0~600 rpm
Initial specimen thickness: less than 200 µm
Grinding can be stopped at set thickness automatically. - Multiprep System Wedge Polisher (Allied)
Angular adjustments: 0~10 degrees
Platen rotation speed: 5~350 rpm
Sample load: 0~600 g
Thickness of a sample can be controlled precisely with a digital dial indicator. - Flat Polisher (Maruto)
ML-150L: 85~170 rpm (for rough polishing)
ML-150P: 30~190 rpm (for fine polishing)
Abrasive type: SiC, Al2O3 etc. - Model 682 PECS (Gatan)
Precision Etching & Coating System
PVD method: Ion beam sputtering
Acc. voltage: 1 to 10 kV
Working gas: Argon
Targets: C, Cr, Pt and AuPd - NL-OPC80A Osmium Coater (Filgen)
PVD method: DC-glow discharge
Target: Osmium - JEC-560 Carbon Coater (JEOL)
PVD method: thermal evaporation
Target: Carbon - JFC-1500 Gold Coater (JEOL)
PVD method: DC-glow discharge
Target: Gold - JFC-1600 Platinum Coater (JEOL)
PVD method: Magnetron
Target: Platinum - ISOMET Low Speed Saw (Buehler)
Low Speed/ light load
4-inch High precision diamond blade
Blade speed: 0~300 rpm - Model 601 Ultrasonic Disk Cutter (Gatan)
3 mm cutting tool
Cutting grit: SiC, etc. - Other auxiliary equipment for TEM sample preparation
Optical microscope, Hot plate,
Ultrasonic cleaner, etc.
TEM sample preparation apparatus in Sengen site
Room108, Physical Analysis Laboratories at Sengen
Most devices here are operated by our technical staff on behalf of users.