P1-1754Investigation on Wide Bandgap Tin Perovskite Solar CellsKey Words: Tin perovskite, Wideband gap, Solar cells, Defect passivationTandem solar cells (Silicon/perovskite) have progressed by combining narrow-bandgap halide perovskites (Eg ~1-1.3 eV) as bottom cells with wide-bandgap Pb-halide perovskites (Eg >1.6 eV) as top cells. However, the toxicity of lead in halide perovskites (HP) has impeded broader acceptance. Therefore, wide band gap tin perovskites (WB-Sn-HPs) could be one of the best choices for Pb-free Si/perovskite tandem applications⚫F-BHZ –IPL improved the device efficiency from 7.96 to 11.14%.⚫Form of a compact and larger-grain film with better crystallinity. ⚫F-BHZ>better film formation and passivation.ConclusionExperimental: Material Growth Device Results and Analysis⚫To improve optoelectronic quality of Sn-perovskite film.⚫To explore HTL/ETL engineering.⚫To investigate the degradation mechanism.Future PlanIntroduction➢FabricationofWB-Sn-PSCs➢Surfacepassivationusing4-Fluoro-benzohydrazide(F-BHZ)multifunctionalmolecule.➢AchievedthebestPCEof11.14%withaninverteddeviceconfiguration.Theme underDiscussionPhotovoltaics Materials Group, GREEN, Dhruba B. KhadkaE-mail：： KHADKA.B.Dhruba@nims.go.jpFig. Schematic of device fabrication approachMaterials properties: Sn-perovskite with surface treatment-F-BHZ:➢ForIPLwithF-BHZmolecules-SEMimage:improvefilmcoverage+suppressthepinholedensities.XRD patterns: Sn-HP film with IPL treatment:➢Intensified XRD characteristics peak. 14.414.828.829.22qq (deg.)40060080010000200400PL Intensity (a.u.)Wavelength (nm) Control IPL-1 mg/ml IPL- 2 mg/mlPL spectra with F-BHZ -IPL➢Eg~ blueshift ➢IntensifiedJ-V characteristicsIPL-F-BHZ0.00.20.40.60.81.0-5051015J (mAcm-2)V (V) Control / IPL- F-BHZ7.96 %11.14 %0102030400.00.30.60.91.2PCEt/PCE0Time (h)ControlIPL- F-BHZDevice stabilityt~ 30 h, 50.18%t~10 h, 31.22%Sn-PSC with IPL-F-BHZ treatment–superior stabilityt~ 30 h, 50.18%Time-resolved PL (TRPL) characteristicsLongercarrierlifetime-lowerdefectdensityDFT calculations➢Sn-perovskite surfaces > 2.33Å -O-Sn>4.15 Åfor F-I> 4.80 Å for F-Sn. ➢Strong O-Sn interaction > Weak interaction of F-IMolecular Interaction: F-BHZ and Sn-perovskite filmToF-SIMS distribution:F-BHZ –molecular distribution00.511.52681012PCE (%)IPL concentration (mg/ml)Device PCE with varying content of F-BHZ7.96 %11.14 %Ref. D.B. Khadka, Small 2025, 21, 2410048.
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