Fig. 1 Overview of our method [1] ©STAM-methodsFig. 1 Frequency shift of the diamond cantilevers of O-terminated diamond.55[1] Ryo Murakami, et. al., STAM-methods, 4 (2024) 1.Poster Award NomineePoster Award NomineeP1-19Automatic Identification of Crystalline Phases Using Bayesian Estimation in XRDRyo Murakami1, Yoshitaka Matsushita1, Kenji Nagata1, Hayaru Shouno2, and Hideki Yoshikawa21 Center for Basic Research on Materials, National Institute for Materials Science (NIMS)2 Research Network and Facility Services Division, National Institute for Materials Science (NIMS)3 School of Informatics and Engineering, The University of Electro-CommunicationsWe developed the method to identify the crystalline phase structure from X-ray diffraction pattern. Traditionally, narrowing down the correct crystalline phase from multiple candidates has relied on the expertise and judgement of an experienced researcher. However, this conventional approach is heavily dependent on the analyst and lacks objectivity. Moreover, there is no established method to discuss the confidence intervals of the results. In this study, we aimed to develop a method for automatically estimating crystalline phases from diffraction patterns using Bayesian estimation (Fig. 1) [1]. Our method successfully identified the true crystalline phase with high probability from among 50 phase candidates.P1-20Revealing the Surface Adsorbates of Diamond Using MEMS ResonatorsKeyun Gu, Zilong Zhang, Wen Zhao, Guo Chen, Yasuo Koide, Satoshi Koizumi, and Meiyong LiaoResearch Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)Surface states of semiconductors determine the ultimate electronic properties of semiconductor devices. The in-situ realization of the surface properties of semiconductors in atomic scale relies on ultra-high vacuum and sophisticated techniques. In the work, we propose the utilization of diamond microelectromechanical system (MEMS) resonators to reveal the surface properties of adsorption/desorption of oxygen (O)- and hydrogen (H)-terminated diamonds [1,2]. Our strategy is to measure the mechanical resonance frequency shift of diamond cantilevers by in-situ heating and cooling the cantilevers. Based on the frequency shift, the equivalent thickness of the adsorption layer the O- and H-terminated diamond is ~0.4 nm and ~0.9 nm, respectively. This work discloses that MEMS provides a precise insight into the surface nature of the semiconductor surface.[1] Meiyong Liao, Advanced Materials, 22(47), 5393-5397 (2010).[2] Keyun Gu, Carbon, 225, 119159 (2024).
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