InGaAs QDs determined from the STM image
(a) 250nm~80nm STM image of HDE-grown InGaAs QDs acquired at a sample
bias of -2.5V (filled states) and a tunneling current of 0.08 nA; (b) zoom-in
view of a InGaAs QDs.
(a) Empty state STM image of InGaAs QDs acquired at a sample bias of 2.5V
(empty states) and a tunneling current of 0.08 nA; (b) enhanced display
of (a) showing individual In atoms; (c) row-by-row In-concentration along
the [001] direction of the QDs
