National Institute of Science Education and Research (NISER),
HBNI, Jatni-752050, Odisha, India
Date & Time: 15:00 - 16:00, May 10th (Wed), 2023.
Place: 2nd Conference Room, 1F, Main Bldg., Sengen site.
(The 254th Special CMSM seminar)
Exchange bias properties and spin to charge conversion in different ferromagnetic and antiferromagnetic systems
National Institute of Science Education and Research (NISER),
HBNI, Jatni-752050, Odisha, India
Abstract:
We have investigated the effect of spin glass like interface on exchange bias properties in different exchange bias systems such as IrMn/Fe, NiMn/CoFeB, Co/Co3O4 and Mn2Au/NiFe. The fitting of spin glass freezing temperature vs frequency with Vogel Fulcher law shows the presence of spin glass frustration in our systems [1,2].
Due to the high spin orbit coupling strength, lack of production of parasitic stray fields and resistance to the perturbations of magnetic field, antiferromagnets (AFM) are advantageous for spintronic devices. Spin pumping technique is used to detect the spin current in such antiferromagnets. Among various AFMs, IrMn, NiMn, Mn3Ga, Mn2Au exhibit very high SOC and we have studied spin to charge conversion via inverse spin Hall effect (ISHE) with these AFMs. [3-7] We report large spin diffusion length (~2.6nm) in semiconducting AFM Co3O4 for the first time [7]. The evaluated spin mixing conductance and spin Hall angle in these AFM systems reveal efficient spin current propagation.
References
[1] S. Nayak et al., J. Magn. Magn. Mater., 499,166267, 2020
[2] S. Nayak et al., Phys. Chem. Chem. Phys., 23, 6481-6489, 2021.
[3] B. B. Singh et al., Phys. Rev. Applied 13, 044020, 2020
[4] B. B. Singh et al., Phys. Rev. B 102, 174444, 2020
[5] Roy et al., Phys. Chem. Chem. Phys., 23, 6481, 2021.
[6] Roy et al., J. Phys. D: Appl. Phys. vol. 54, no. 425001 (2021).
[7] Roy et al., ACS Appl. Electron. Mater., vol. 5, no. 1575-1580 (2023).
Due to the high spin orbit coupling strength, lack of production of parasitic stray fields and resistance to the perturbations of magnetic field, antiferromagnets (AFM) are advantageous for spintronic devices. Spin pumping technique is used to detect the spin current in such antiferromagnets. Among various AFMs, IrMn, NiMn, Mn3Ga, Mn2Au exhibit very high SOC and we have studied spin to charge conversion via inverse spin Hall effect (ISHE) with these AFMs. [3-7] We report large spin diffusion length (~2.6nm) in semiconducting AFM Co3O4 for the first time [7]. The evaluated spin mixing conductance and spin Hall angle in these AFM systems reveal efficient spin current propagation.
References
[1] S. Nayak et al., J. Magn. Magn. Mater., 499,166267, 2020
[2] S. Nayak et al., Phys. Chem. Chem. Phys., 23, 6481-6489, 2021.
[3] B. B. Singh et al., Phys. Rev. Applied 13, 044020, 2020
[4] B. B. Singh et al., Phys. Rev. B 102, 174444, 2020
[5] Roy et al., Phys. Chem. Chem. Phys., 23, 6481, 2021.
[6] Roy et al., J. Phys. D: Appl. Phys. vol. 54, no. 425001 (2021).
[7] Roy et al., ACS Appl. Electron. Mater., vol. 5, no. 1575-1580 (2023).
(Contact)
Y. Sakuraba, Magnetic Functional Device Group
E-mail: SAKURABA.Yuya[at]nims.go.jp
E-mail: SAKURABA.Yuya[at]nims.go.jp