Electric-field-controlled MRAM: Introduction and Recent Progress
Prof. Pedram Khalili
Los Angeles, California 90095, USA
Date & Time: 14:00 - 15:10, September 27th (Tue), 2016.
Place: Second Seminar Room, Sengen 1F
Abstract:
The fast growth of memory-intensive applications in machine learning and data centers requires large amounts of high-performance embedded memory. This talk will discuss the recent progress of electric-field-controlled magnetoelectric random access memory (MeRAM), which is targeted as a high-performance embedded RAM solution in advanced CMOS nodes. MeRAM uses a two-terminal voltage-controlled magnetic tunnel junction device to store information. Writing is performed by inducing a fast precession of magnetization in response to an applied voltage. Using electric-field-controlled writing reduces the write current, thereby improving density and energy efficiency compared to existing spin torque MRAM. We will discuss the design of write/read circuits to ensure low write error rate and read disturbance. We show experimental data on write error rate, speed and energy down to 50 nm in bit size, with write energy ~6 fJ/bit, and switching voltage reduction to < 0.8 V. Future directions and perspectives for applications are also discussed.