Spin dependent transport in magnetic nanostructures
Prof. Guenter Reiss
Center for Spinelectronic Materials and Devices
Date & Time: 10:30 - 11:30, November 5th (Thu), 2015.
Place: 8F Medium Seminar Room(#811-812), Sengen
Abstract:
Spin-electronics and -caloritronics are rapidly developing and new effects have been observed such as the Spin-Seebeck effect (SSE), the Tunneling Magneto Seebeck Effect (TMS) or spin transfer torque switching (STT) at ultralow current density. The first part discusses the tunneling magnetoresistance (TMR) and spincaloritronics of magnetic tunnel junctions. We present results on the TMS and show ultralow switching current density for low resistive TMR devices. This effect will be discussed in terms of temperature- and voltage-driven anisotropy changes. The second part introduces the SSE in transverse and longitudinal geometry. We demonstrate the LSSE in insulating and semiconducting ferromagnets and show that the signals attributed to a “TSSE” are most probably due to unintended out-of-plane temperature gradients.