The 198th Special MMU seminar
Progress of STT-MRAM Technology, the effect on low-power memory systems, and issues for scalability
Dr. Hiroaki Yoda
Center for Semiconductor Research & Development, Toshiba Corporation
Date: August 7(Thu), 2014
Time: 15:30 - 16:30
Place: 8th floor room 801-802(ʉڎ), Sengen
Intensive works on Perpendicular-MTJs(P-MTJ) overcame the major
obstacle of large write current. The P-MTJ reduce the current to the
order of 30 micro-amperes. Electric charge neccesary for writing is also
reduced to below 100fC/bit. MR is improved to over 200% as well. As a
result, P-MTJs opend not only the way to giga-bits density for STT-MRAMs
but also the way to ultra-low-power consumption memory systems called
ormally-off systems. However, there are many issues for scaling below
20nm nodes which most of reserchers do not recognize. The first half of
this seminar covers the progress of STT-technoloty and the second half
covers the issues for scaling.