195th Special MMU seminar


Core Technology for STT-MRAM

Prof. Yunheub SONG
Dept. Electronic Engng., Hanyang Univ (Seoul).

Date: June 9(Mon), 2014
Time: 13:00 - 14:00
Place: 8th floor medium seminar room (Room 812), Sengen
I introduce several core technology for the production of STT-MRAM. Here, reliability modeling to estimate TDDB (Time Dependent Dielectric Breakdown), circuit design to improve sensing margin and the scaling solution of switching device are reviewed by our recent research works. For Magnetic tunnel junction with 1 nm thickness MgO dielectric, TDDB reliability modeling considering a direct tunneling is investigated by the theoretical analysis, and compared to one of silicon dioxide. We expect that this research will be helpful for better understanding and providing a solution for the production technology of STT-MRAM.