195th Special MMU seminar
Core Technology for STT-MRAM
Prof. Yunheub SONG
Dept. Electronic Engng., Hanyang Univ (Seoul).
Date: June 9(Mon), 2014
Time: 13:00 - 14:00
Place: 8th floor medium seminar room (Room 812), Sengen
I introduce several core technology for the production of STT-MRAM. Here,
reliability modeling to estimate TDDB (Time Dependent Dielectric
Breakdown), circuit design to improve sensing margin and the scaling
solution of switching device are reviewed by our recent research works.
For Magnetic tunnel junction with 1 nm thickness MgO dielectric, TDDB
reliability modeling considering a direct tunneling is investigated by the
theoretical analysis, and compared to one of silicon dioxide. We expect
that this research will be helpful for better understanding and providing a
solution for the production technology of STT-MRAM.