Spin current can induce an effective field in a nonmagnetic material by spin accumulation phenomena. This effect has been attracting attentions from not only the physical viewpoint but also the technological viewpoint. New kinds of magnetic field sensor, especially a read head in HDD, are expected to be realized based on the spin accumulation phenomena.
In this seminar, we report the non-local geometry measurement results of a lateral spin valve structure CoFeB/MgO/Cu. All films were deposited by RF sputtering apparatus and the lateral spin valves were fabricated by EB lithography and ion milling. By applying the crystalline MgO barrier interface to the lateral spin valve, the interfacial spin polarization PJ increased, and then, the output voltage ?Vs demonstrated larger value than the lateral spin valve with a non-crystalline AlOx barrier interface. From obtained results, we discuss about the applicability of spin accumulation phenomena for over Tb/inch2 class read head.