Toyohiro Chikyo
- Affiliation:
-
- Nano-Elecronics Materials Unit, MANA, NIMS
- Waseda University-NIMS Joint Graduate Program
- Affiliate Professor, MSE University of Washington
- Specialty:
- Nano electrics and related materials
- Academic degree:
- Ph.D., School of Science and Engineering, Waseda Univ. (1989)
- Recent publications
- See NIMS Researchers DB
Educational & Working History
2010 | Managing director, Nano-Electronics Materials Unit | ||
2006 | Managing director, Advanced Electric Materials Center | ||
2003 | Director, Nano Materials Assembly Group,NIMS | ||
2001 | Senior researcher, National Institute for Materials Science (NIMS; reorganized from NRIM) | ||
1994 | Senior researcher, NIRIM | ||
1993 | - | 1994 | Visiting Researcher , North Carolina State University |
1989 | Researcher, National Research Institute for Metal (NRIM) | ||
1989 | Doctor of Engineering, Waseda Univeristy |
Research History
Prof. Toyohiro Chiyo has been developing combinatorial synthesis systems and high throughput characterization tools to screen the candidate materials in a short time.
Based on this cutting edge technology for materials screening, he currently investigates gate stack materials including metal gate and higher-k dielectric for future nano device, where he is aiming at a direct high-k oxides on Si and work function tunable amorphous metal gate. He has also applied this combinatorial synthesis technique to memory device such as ReRAM or atomic switching device and, new transparent conductive oxide.
He has been organizing research network and collaboration scheme with industries and universities. One of the example was "high-k net" which started in 2003 to accelerate materials research in nano CMOS device with a research consortium " Selete" and several Universities. He also contributed to organize a workshop on combinatorial materials science and technology in the past 10 years and is recognized as one of the major researcher on this field.
As outreach activities, he has been working together with industries and related organization to dedicate himself to practical applications.
Selected Papers
- Interface chemistry and electronic structure of GaN/MgAl2O4 revealed by angle-resolved photoemission spectroscopy
- G. He, T. Chikyow, and S. F. Chichibu
- Appl. Phys. Lett. 97, 161907 (2010)
- Oxygen migration at Pt/HfO2/Pt interface under bias operation
- T. Nagata, M. Haemori, Y. Yamashita, Y. Iwashita, H. Yoshikawa, K. Kobayashi and T. Chikyow
- Applied Physics Letters, 97, 082902 (2010)
- Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal n-ZnO
- T. Nagata, J. Volk, M. Haemori, Y. Yamashita, H. Yoshikawa, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi and T. Chikyow
- Journal of Applied Physics, 107, 103714 (2010)
- Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion
- M. Haemori, T. Nagata and T. Chikyow
- Applied Physics Express, 2, 061401 (2009)
- Capability of focused Ar ion beam sputtering method for combinatorial synthesis of metal films
- T. Nagata, M. Haemori and T. Chikyow
- Journal of Vacuum Science and Technology A, 27, 492 (2009)
- Pliant Epitaxial Ionic Oxides on Silicon
- D. Kukuruznyak, H. Reichert, K. Ohmori, P. Ahmet and T. Chikyow
- ADVANCED MATERIALS, 20, 3827(2008)
- Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures
- K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K .Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y .Nara, K.-S. Chang, M. L. Green and K . Yamada
- J. Appl. Phys., 101, 84118 (2007)
- GaN Film Fabrication by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
- T. Nagata, Y. Sakuma, T. Uehara and T. Chikyow
- Japanese Journal of Applied Physics Letter, 46, L43 (2007)
- First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
- N. Umezawa, K. Shiraishi , T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima and T. Arikado
- Appl. Phys. Lett., 86, 143507(2005)
- Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics
- K. Hasegawa, P. Ahmet, N. Okazaki, T. Hasegawa, K. Fujimoto , M. Watanabe, T. Chikyow, and H. Koinuma
- Appl. Surf. Sci., 223(2004) 229-232
- A Combinatorial approach in oxide/semiconductor interface research for the future electron devices
- T. Chikyow, P. Ahmet, K. Nakajima, T .Koida, M .Takakura, M .Yoshimoto, and H. Koinuma
Appl. Surf. Sci., 189 (2002) 284