Kazuhito Tsukagoshi

Kazuhito Tsukagoshi
Affiliation:
Pi-Electron Electronics Group, MANA, NIMS
Specialty:
Nanoelectronics
Academic degree:
Ph.D. Osaka University (1995)
Recent Publications
See NIMS Researchers DB

Educational History

1993 - 1995 Ph.D., Physics department, Graduate school of Science, Osaka University

Job History

2009 - Present Principal Investigator, National Institute for Materials Science (NIMS)
2008 Senior Research, Advanced Industrial Science and Technology (AIST)
2006 - Present Director, Nano-scale surface control for high-performance organic transistor,- Project, CREST Program, Japan Science and Technology Corporation (JST)
1999 - 2008 Researcher/ Senior researcher/Unit leader, The Institute of Physical and Chemical Research (RIKEN)
1997 - 1999 Researcher, Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
1996 - 1997 Visiting researcher, Cambridge University, Cavendish Laboratory, Microelectronic Research centre, Research Fellow (PD), Promotion of Science (JSPS)
1994 - 1999 Research Fellow (DC), Promotion of Science (JSPS)
1992 - 1993 Researcher, Hitachi Laboratory, Hitachi Ltd.

Research History

Dr. Tsukagoshi has developed nano-devices fabricated in nano-materials. In the transport experiments of the nano-carbons, nano-injection between the electrode and nano-carbons was carefully formed to control the electron injection. Contact interface between metallic contact and organic film was also investigated to establish the organic transistor. In these experiments, he noticed that the electron injection would be key point to control the nano-electronics. His researches are widely known in the world as important pioneering results to understand the transport in nano-carbons. Topics are mentioned bellow:

  1. Spin-dependent transport in carbon nanotube: Spin polarized transport was succeeded in carbon nanotube. (This report was published in Nature. So far, this paper was cited more than 370 times.)
  2. Nano-gap fabrication and molecular transport: 1 nm control for metallic nano-gap was developed for molecular-scale material transport. A spin dependent transport in a dimer of fullerenes was detected.
  3. Gate-electric field dependent conduction in grapheme: band-gap engineering in graphene was successfully performed.
  4. Organic transistor: Current injection mechanism in organic thin film transistor, that was one of the most important issues to be solved for transistor control, was revealed.

Selected Papers

  1. Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
    S.-L. Li, H. Miyazaki, M. V. Lee, C. Liu, A. Kanda and K. Tsukagoshi
    Small 7 (11) 1552-1556 (2011)
    2. MaterialsViews.com Featured Article
    This research was featured on MaterialsViews.com:
    Graphene Logic Gates: Low Power, High Gain
  2. Organic Single Crystals Directly Grown on Polymer Dielectric via Solution Process and Field Effect Transistors with Band-like Transport
    C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya and K. Tsukagoshi
    Advanced Materias 23 (4) 523-526 (2011).
  3. Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
    S.-L. Li, H. Miyazaki, H. Hiura, C. Liu and K. Tsukagoshi
    ACS nano 5 (1) 500-506 (2011).
  4. Control of device parameters by active layer thickness in organic field-effect transistors
    M. Kano, T. Minari, K. Tsukagoshi and H. Maeda
    Applied Physics Letters 98 (7) 073307/1-3 (2011).
  5. Effect of air exposure on frequency response characteristics in pentacene-based organic devices
    X. Lu, T. Minari, A. Kumatani, C. Liu and K. Tsukagoshi
    Applied Physics Letters 98 (24) 243301/1-3 (2011).
  6. Influence of disorder on conductance in bilayer graphene under perpendicular electric field
    H. Miyazaki, K. Tsukagoshi, A. Kanda, M. Otani and S. Okada
    Nano Letters 10 (10) 3888-3892 (2010).
  7. Anisotropic transport in epitaxial graphene on SiC substrate with periodic nanofacets
    S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi and Y. Aoyagi
    Applied Physics Letters 96 (6) 062111/1-3 (2010).
  8. Low operating bias and matched input-output characteristics in graphene inverters
    S.-L. Li, H. Miyazaki, A. Kumatani, A. Kanda and K. Tsukagoshi
    Nano Letters 10 (7) 2357-2362 (2010).
  9. Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
    T. Minari, M. Kano, T. Miyadera, S. D. Wang, Y. Aoyagi and K. Tsukagoshi
    Applied Physics Letters 94 (9) 093307/1-3 (2009).
  10. Contact resistance instability in pentacene thin film transistors induced by ambient gases
    S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi and J. Tang
    Applied Physics Letters 94 (8) 083309/1-3 (2009).