Electron-beam-induced current (EBIC) technique is a versatile tool to image the defects in semiconductors and/or to find the failure in actual devices. The MOSFET using high-k/metal gate stack is expected for the CMOS technology of next generation. My current subject includes the EBIC study of leakage and breakdown processes in advance CMOS devices with high-k gate stacks. We have demonstrated the visualization of the leakage path in high-k devices for the first time. It is expected that this technique will be quite helpful for studying novel materials and devices in future.