Isao Ohkubo

Isao Ohkubo
Affiliation:
Atomic Network Materials Group, Nano Functionality Integration Unit, MANA, NIMS
Specialty:
Epitaxial thin film growth, Electronic materials and devices, Solid state chemistry and physics
Academic degree:
Ph.D. Tokyo Institute of Technology (2002)
Recent publications
See NIMS Researchers DB

Educational and Working History

2012 - Present MANA Scientist, Atomic Network Materials Group, MANA, NIMS
2011 Oct - 2012 Mar Lecturer, Dept. of Appl. Chem., The Univ. of Tokyo
2004 Jul - 2011 Sep Assistant professor, Dept. of Appl. Chem., The Univ. of Tokyo
2004 May - 2004 Jun Postdoctoral researcher, Dept. of Appl. Chem., The Univ. of Tokyo
2002 Apr - 2004 Apr Postdoctoral researcher, Condensed Matter Sciences Division, Oak Ridge National Laboratory
2002 Mar Ph.D, Dept. of Innovative and Engineered Materials, Tokyo Institute of Technology
1999 Mar M.Eng., Dept. of Innovative and Engineered Materials, Tokyo Institute of Technology
1997 Mar B.Eng., Dept. of Advanced Materials Sci. and Eng., Yamaguchi University

Research Interests

  • Epitaxial Thin Film Growth of Complex Inorganic Materials
  • Thermoelectric Materials

Awards

  • Tokiwa Prize, March, 1997
  • Director's Award, Materials and Structures Laboratory, Tokyo Institute of Technology, September, 2008

Selected Papers

  1. Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution

    2. T. Harada, I. Ohkubo, M. Lippmaa, Y. Matsumoto, M. Sumiya, H. Koinuma, and M. Oshima
    Phys. Status Solidi (RRL) - Rapid Research Letters 5, 34~36 (2011).

  2. Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

    3. M. Kitamura, I. Ohkubo, M. Matsunami, K. Horiba, H. Kumigashira, Y. Matsumoto, H. Koinuma, and M. Oshima
    Appl. Phys. Lett. 94, 262503-1~262503-3 (2009).

  3. Ferromagnetic properties of epitaxial La2NiMnO6 thin films grown by pulsed laser deposition

    4. M. Kitamura, I. Ohkubo, Y. Matsumoto, H. Koinuma, and M. Oshima
    Appl. Phys. Lett. 94, 132506-1~132506-3 (2009).

  4. Epitaxial growth and surface metallic nature of LaNiO3 thin films

    5. K. Tsubouchi, I. Ohkubo, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima
    Appl. Phys. Lett. 92, 262109-1~262109-3 (2008).

  5. Trap-controlled space-charge-limited current mechanism in resistance switching at Al/Pr0.7Ca0.3MnO3

    6. T. Harada, I. Ohkubo, K. Tsubouchi, H. Kumigashira, T. Ohnishi, M. Lippmaa, Y. Matsumoto, H. Koinuma, and M. Oshima
    Appl. Phys. Lett. 92, 222113-1~222113-3 (2008).

  6. Composition dependence of the anomalous Hall effect in CaxSr1-xRuO3 films

    7. P. Khalifah, I. Ohkubo, B.C. Sales, H.M. Christen, D. Mandrus, and J. Cerne
    Phys. Rev. B 76, 054404-1~054404-11(2007).

  7. High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca0.3MnO3/metal structures

    8. K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, and H. Koinuma
    Advanced Materials 19, 1711~1713 (2007).

  8. High-throughput growth temperature optimization of ferroelectric SrxBa1-xNb2O6 epitaxial thin films using a temperature gradient method

    I. Ohkubo, H.M. Christen, Sergei V. Kalinin, G.E. Jellison, Jr., C.M. Rouleau, and D.H. Lowndes
    Appl. Phys. Lett. 84, 1350~1352 (2004).

  9. Synthesis of epitaxial Y-type magnetoplumbite thin films by quick optimization with combinatorial pulsed laser deposition

    10. I. Ohkubo, Y. Matsumoto, K. Ueno, T. Chikyow, M. Kawasaki, and H. Koinuma
    J. Cryst. Growth, 247, 105~109 (2003).

  10. In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire

    11. I. Ohkubo, A. Ohtomo, T. Ohnishi, Y. Matsumoto, H. Koinuma, and M. Kawasaki
    Surf. Sci., 443, L1043~L1048 (1999).