Songlin Li

Songlin Li
Affiliation:
Pi-electron Electronics Group, MANA, NIMS
Specialty:
Nanoelectronics, Superconductivity, Reversible Resistance Switching Effect
Academic degree:
Ph.D. Institute of Physics, Chinese Academy of Sciences, China (2009)
Home Page:
See Pi-electron Electronics Group, MANA, NIMS

Educational and Working History

2011 - Present ICYS-MANA Researcher, MANA, NIMS
2009 - 2011 Postdoctoral Researcher, MANA, NIMS
2006 - 2009 Ph.D., Institute of Physics, Chinese Academy of Sciences
1999 - 2006 M.Sc. and B.Sc., Chongqing University, China

Research Interests

Lithography-compatible nanoelectronics:

Tremendous interest in two-dimensional (2D) systems has been triggered by the isolation of graphene in 2004, because of their unique dimensionality and properties. Atomically thin semiconductors would enable transistors with much thinner channel and smaller gate length than bulk silicon and thus hold the potential for post-silicon nanoelectronics. In addition, the planar dimensionality allows for lithography-compatible processing and accurate device location which remains a big challenge for one-dimensional nano-materials, such as carbon nanotubes or oxide nanowires. Researches on these systems may lead to finding of suitable post-silicon nanoelectronic materials.

Nano-optoelectronics:

Novel optoelectronic phenomena also emerge when materials change from bulk to 2D. For instance, MoS2 undergoes a striking transition of band structure from an indirect to direct semiconductor when thinned to monolayer. This would facilitate irradiative combination of holes and electrons and increases internal efficiency for light emission. In addition, 2D materials are almost transparent with a high light transmissivity, which offers natural optical window for light emission and may allow for high external quantum efficiencies. The dimensionality confinement in 2D materials provides new opportunities for novel optoelectronic devices at nanoscale.

Selected Papers

  1. Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
     S.-L. Li, H. Miyazaki, H. Song, H. Kuramochi, S. Nakaharai and K. Tsukagoshi
    ACS Nano,2012, 6(8), 7381-7388.
  2. Complementary-like Semiconducting Graphene Logic Gates Controlled by Electrostatic Doping
    S.-L. Li, H. Miyazaki, M.V. Lee, C. Liu, A. Kanda and K. Tsukagoshi
    Small, 2011, 7(11), 1552-1556.
  3. Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
    S.-L. Li, H. Miyazaki, C. Liu, H. Hiura and K. Tsukagoshi
    ACS Nano, 2011, 5(1), 500-506.
  4. Low Operating Bias and Matched Input-Output Characteristics in Graphene Logic Inverters
    S.-L. Li, H. Miyazaki, A. Kumatani, A. Kanda and K. Tsukagoshi
    Nano Letters, 2010, 10(7), 2357-2362.
  5. Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes
    S.-L. Li, D.S. Shang, J.L. Gang, J. Li and D.N. Zheng
    Journal of Applied Physics, 2009, 105(3), 033710.
  6. Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions
    S.-L. Li, Z.L. Liao, J. Li, J.L. Gang and D.N. Zheng
    Journal of Physics D: Applied Physics, 2009, 42(4), 045411.
  7. Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction
    S.-L. Li, J.L. Gang, J. Li, H.F. Chu and D.N. Zheng
    Journal of Physics D: Applied Physics, 2008, 41(18), 185409.
  8. Superconductivity, Hall properties and disorder effect in Pr1-xCaxBa2Cu3O7-δ (0.4<=x<=0.6) epitaxial thin films
    S.-L. Li, J. Li, J.Y. Xiang, H.F. Chu, S. Li, P. Wang and D.N. Zheng
    Superconductor Science and Technology, 2008, 21(3), 035005.