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Kazuhito Tsukagoshi

MANA Principal Investigator (PI)

Affiliation:


Educational & Research History

2009 - Present
Principal Investigator, National Institute for Materials Science (NIMS)
2008
Senior Research, Advanced Industrial Science and Technology (AIST)
2006 - Present
Director, Nano-scale surface control for high-performance organic transistor,- Project, CREST Program, Japan Science and Technology Corporation (JST)
1999 - 2008
Researcher/ Senior researcher/Unit leader, The Institute of Physical and Chemical Research (RIKEN)
1997 - 1999
Researcher, Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
1996 - 1997
Visiting researcher, Cambridge University, Cavendish Laboratory, Microelectronic Research centre, Research Fellow (PD), Promotion of Science (JSPS)
1994 - 1996
Research Fellow (DC), Promotion of Science (JSPS)
1992 - 1993
Researcher, Hitachi Laboratory, Hitachi Ltd.
1993 - 1995
Ph.D., Physics department, Graduate school of Science, Osaka University

Research History

Dr. Tsukagoshi has developed nano-devices fabricated in nano-materials. In the transport experiments of the nano-carbons, nano-injection between the electrode and nano-carbons was carefully formed to control the electron injection. Contact interface between metallic contact and organic film was also investigated to establish the organic transistor. In these experiments, he noticed that the electron injection would be key point to control the nano-electronics. His researches are widely known in the world as important pioneering results to understand the transport in nano-carbons. Topics are mentioned bellow:

  1. Spin-dependent transport in carbon nanotube: Spin polarized transport was succeeded in carbon nanotube. (This report was published in Nature. So far, this paper was cited more than 370 times.)
  2. Nano-gap fabrication and molecular transport: 1 nm control for metallic nano-gap was developed for molecular-scale material transport. A spin dependent transport in a dimer of fullerenes was detected.
  3. Gate-electric field dependent conduction in grapheme: band-gap engineering in graphene was successfully performed.
  4. Organic transistor: Current injection mechanism in organic thin film transistor, that was one of the most important issues to be solved for transistor control, was revealed.


Selected Papers

  1. Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
    S.-L. Li, H. Miyazaki, M. V. Lee, C. Liu, A. Kanda, K. Tsukagoshi
    Small 7 (11) 1552-1556 (2011)
    This research was featured on MaterialsViews.com:
    Graphene Logic Gates: Low Power, High Gain
  2. Solution-Processable Organic Single Crystals with Bandlike Transport in Field-Effect Transistors
    C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya, K. Tsukagoshi
    Advanced Materias 23 (4) 523-526 (2011).
  3. Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels
    S.-L. Li, H. Miyazaki, H. Hiura, C. Liu, K. Tsukagoshi
    ACS nano 5 (1) 500-506 (2011).
  4. Control of device parameters by active layer thickness in organic field-effect transistors
    M. Kano, T. Minari, K. Tsukagoshi, H. Maeda
    Applied Physics Letters 98 (7) 073307/1-3 (2011).
  5. Effect of air exposure on metal/organic interface in organic field-effect transistors
    X. Lu, T. Minari, A. Kumatani, C. Liu, K. Tsukagoshi
    Applied Physics Letters 98 (24) 243301/1-3 (2011).
  6. Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field
    H. Miyazaki, K. Tsukagoshi, A. Kanda, M. Otani, S. Okada
    Nano Letters 10 (10) 3888-3892 (2010).
  7. Anisotropic transport in graphene on SiC substrate with periodic nanofacets
    S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi
    Applied Physics Letters 96 (6) 062111/1-3 (2010).
  8. Low Operating Bias and Matched Input−Output Characteristics in Graphene Logic Inverters
    S.-L. Li, H. Miyazaki, A. Kumatani, A. Kanda, K. Tsukagoshi
    Nano Letters 10 (7) 2357-2362 (2010).
  9. Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
    T. Minari, M. Kano, T. Miyadera, S. D. Wang, Y. Aoyagi, K. Tsukagoshi
    Applied Physics Letters 94 (9) 093307/1-3 (2009).
  10. Contact resistance instability in pentacene thin film transistors induced by ambient gases
    S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, J. Tang
    Applied Physics Letters 94 (8) 083309/1-3 (2009).
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