Comparing the Fluorescence Properties of Single-Photon Emitter Characteristics Generated by Boron and Nitride Ion Implantation
Author
Po-Sheng Shi
Affiliation
Optical Nanostructure Team, MANA, NIMS
Institute of Photonics, National Tsing Hua University, Taiwan
Biography
I am a Ph.D. student in the Institute of Photonics at National Tsing Hua University, Taiwan. My research focuses on two-dimensional materials and near-field optical spectroscopy. I have worked on hexagonal boron nitride, with particular experience in nano-FTIR and Raman. My current research investigates ion-implantation-induced structural and optical modifications in hBN.
Abstract
We investigate the effects of boron (B⁺) and nitrogen (N⁺) ion implantation on the structural and optical properties of hexagonal boron nitride (hBN). AFM reveals distinct surface modifications induced by the two ion species, while nano-FTIR mapping shows corresponding variations in the local infrared response. These results highlight the influence of ion species on defect-induced morphological and optical modifications in hBN and provide insight into ion-implantation-based defect engineering.
References
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