MANA International Symposium 2025
Semiconductor Materials - 11
Abstract
To realize edge computing playing a role of artificial intelligence on terminal device, low power consumption and real-time information processing are required. Reservoir computing using physical device attracts attentions as promising from the perspectives of low learning cost high-speed processing, and physical implementation. Spintronic reservoirs possess particularly the potential of excellent miniaturization and high computational performance
The IGR in this study is an all-solid-state oxidation-reduction device (Figure (a)) using room-temperature ferrimagnetic Fe3O4 thin film and Zr-Li4SiO4 (LSZO) thin film as the Li electrolyte. The magnetization vector can be manipulated through electronic structure in the thin film by applying a gate voltage (VG) (Figure (b))
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