MANA International Symposium 2025
Semiconductor Materials - 04
Abstract
Physical reservoir computing, in which physical phenomena exhibiting nonlinear responses are used as reservoirs, is expected to be applied to next-generation edge AI devices because of its low learning cost and highly efficient processing. Ion gating reservoirs using high-density carrier injection with solid electrolytes have been realized in various material systems
We fabricated an electric double-layer transistor using MoS2 as a channel material on a solid electrolyte substrate and realized a MoS2-based Raman-ion-gating reservoir (MoS2-RIGR) that uses both Raman scattering signals and current responses in the channel region as computational resources. Figure (c) shows a schematic diagram of the fabricated MoS2-RIGR device. Multilayer MoS2 fabricated by the exfoliation method was used as the channel material. Here we use an excitation laser with a wavelength of 632.8 nm, which provides resonant Raman scattering effects for multilayer MoS2. The nonlinear waveform transformation task was performed using Raman scattering signal, drain current, and gate current as reservoir states. Higher accuracy was obtained in all types of waveform transformation when both Raman and current responses were used as reservoir states. Furthermore, it was found that including the Raman signal in the reservoir state reduces the normalized mean square error in solving the second-order nonlinear dynamical equation by 37%.
Reference
- D. Nishioka et al., Sci. Adv. 8, eade1156 (2022).
- T. Wada et al., Adv. Intell. Syst. 5, 200123 (2023).
- D. Nishioka et al., Commun. Eng. 3, 81 (2024).
- D. Nishioka, Y. Shingaya et al., Sci. Adv. 10, eadk6438 (2024).
- Y. Shingaya et al., Nanoscale 14, 14552 (2022).