Challenges in bulk Si crystal growth for PV application: focus on dislocations

Karolin JIPTNER

ICYS-MANA researcher

Roughly 90% of solar cells produced worldwide are based on bulk Si. What this means is that if the efficiency of Si based solar cells can be increased by only a small fraction, the impact on the world energy production is enormous. This work focuses on the improvement of the Si bulk material itself. Si crystal growth using the directional solidification technique is performed and the grown Si ingots are analyzed. Main emphasize is on the study of dislocation behavior, since dislocations are one of the most detrimental defects. In my talk I would like to give an overview over achievements so far and describe challenges in Si crystal growth and dislocation analysis.